T-GATE

作品数：17被引量：16H指数：2
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相关领域：电子电信更多>>
相关作者：和致经刘新宇刘果果黄俊魏珂更多>>
相关机构：中国科学院微电子研究所淄博汉林半导体有限公司重庆伟特森电子科技有限公司中国科学院更多>>
相关期刊：《Chinese Journal of Electronics》《Science Bulletin》《Communications in Theoretical Physics》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划中国科学院重点实验室基金更多>>
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Research on self-supporting T-shaped gate structure of GaN-based HEMT devices
《Chinese Physics B》2023年第6期551-555,共5页张鹏 李苗 陈俊文 刘加志 马晓华 
Project supported by the National Natural Science Foundation of China(Grant No.62188102);the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2022JM-316);the Fund from the Ministry of Education of China(Grant No.8091B042112)。
A self-supporting T-shaped gate(SST-gate) GaN device and process method using electron beam lithography are proposed.An AlGaN/GaN high-electron-mobility transistor(HEMT) device with a gate length of 100 nm is fabricat...
关键词：GAN high-electron-mobility transistor(HEMT) SELF-SUPPORTING T-GATE 
Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer被引量：2
《Chinese Physics B》2019年第4期326-331,共6页Tie-Cheng Han Hong-Dong Zhao Xiao-Can Peng 
Project supported by the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory,China(Grant No.614210701041705)
Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/...
关键词：ALGAN/GAN HEMT BGAN back barrier SHORT-CHANNEL effects(SCEs) 
100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f_T = 249 GHz and f_(max) = 415 GHz被引量：2
《Chinese Physics B》2014年第3期613-618,共6页汪丽丹 丁芃 苏永波 陈娇 张毕禅 金智 
Project supported by the National Basic Research Program of China(Grant No.2010CB327502)
InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length...
关键词：InP high electron mobility transistor asymmetrically recessed gate cutoff frequency fx maximumoscillation frequency fmax 
0.15-μm T-gate In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As InP-based HEMT with fmax of 390 GHz
《Chinese Physics B》2013年第12期522-526,共5页钟英辉 张玉明 张义门 王显泰 吕红亮 刘新宇 金智 
Project supported by the National Basic Research Program of China(Grant Nos.2010CB327502 and 2010CB327505);the Advance Research Project(Grant No.5130803XXXX)
In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors （HEMTs） each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF chara...
关键词：breakdown voltage cut-off frequency high electron mobility transistors maximum oscillation frequency 
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition被引量：2
《Chinese Physics B》2011年第6期530-533,共4页李海鸥 黄伟 邓泽华 邓小芳 刘纪美 
Project supported by CERG Grant (615506) from the Research Grants Council of Hong Kong Special Administrative Region of China and Intel Corporation;Science and Technology Plan of the Education Bureau of Guangxi Zhuang Autonomous Region of China (Grant No. 200911MS93)
The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors （mHEMTs） grown on GaAs substrate by metal organic chemical vapour deposition （MOCVD） are reported....
关键词：GAAS METAMORPHIC high electron mobility transistor metal-organic chemical vapour deposition 
Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition被引量：2
《Chinese Physics B》2010年第3期491-495,共5页徐静波 张海英 付晓君 郭天义 黄杰 
Project supported by the State Key Development Program for Basic Research of China (Grant No. G2002CB311901);Institute of Microelectronics,Chinese Academy of Sciences,Dean Fund (Grant No. 06SB124004)
This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour depos...
关键词：GaAs-based metamorphic HEMT maximum current gain cut-off frequency maximum oscillation frequency T-GATE 
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