T-GATE

作品数：17被引量：16H指数：2
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相关领域：电子电信更多>>
相关作者：和致经刘新宇刘果果黄俊魏珂更多>>
相关机构：中国科学院微电子研究所淄博汉林半导体有限公司重庆伟特森电子科技有限公司中国科学院更多>>
相关期刊：《Chinese Journal of Electronics》《Science Bulletin》《Communications in Theoretical Physics》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划中国科学院重点实验室基金更多>>
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Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs被引量：1
《Journal of Semiconductors》2021年第9期66-71,共6页Changxi Chen Quan Wang Wei Li Qian Wang Chun Feng Lijuan Jiang Hongling Xiao Xiaoliang Wang 
supported by the National Key Research and Development Program of China(2017YFB0402900);the National Natural Sciences Foundation of China(62074144).
In this paper,we investigated the effect of post-gate annealing(PGA)on reverse gate leakage and the reverse bias reliability of Al_(0.23)Ga_(0.77)N/GaN high electron mobility transistors(HEMTs).We found that the Poole...
关键词：AlGaN/GaN HEMTs gate leakage PF emission post-gate annealing(PGA) 
30 nm T-gate enhancement-mode InAIN/AIN/GaN HEMT on SiC substrates for future high power RF applications
《Journal of Semiconductors》2017年第8期22-27,共6页P.Murugapandiyan S.Ravimaran J.William 
The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated ...
关键词：HEMT back-barrier recessed gate cut-off frequency regrown ohmic contact short channel effects 
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation被引量：2
《Journal of Semiconductors》2011年第6期24-26,共3页张仁平 颜伟 王晓亮 杨富华 
AlGaN/GaN high electron mobility transistors（HEMTs）with high performance were fabricated and characterized.A variety of techniques were used to improve device performance,such as AlN interlayer,silicon nitride passi...
关键词：GaN HEMT T-GATE AIN interlayer SiN passivation current density 
Post-Gate Process Annealing Effects of Recessed AlGaN/GaN HEMTs被引量：1
《Journal of Semiconductors》2008年第12期2326-2330,共5页刘果果 黄俊 魏珂 刘新宇 和致经 
supported by the State Key Development Programfor Basic Research of China(No.2002CB311903);the Key Innovation Program of the Chinese Academy of Sciences(No.KGCX2-S W-107)~~
This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are in...
关键词：GAN dry etching gate leakage ANNEALING N vacancy 
A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design
《Journal of Semiconductors》2008年第9期1654-1656,共3页陈志刚 张杨 罗卫军 张仁平 杨富华 王晓亮 李晋闽 
We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate. Using this new layout,we can change th...
关键词：GAN HEMT T-GATE layout 
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