SEMI-INSULATING

作品数：34被引量：18H指数：2
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相关领域：电子电信更多>>
相关作者：赵有文林兰英王超张玉明张义门更多>>
相关机构：中国科学院河北半导体研究所香港大学西安电子科技大学更多>>
相关期刊：《Chinese Physics Letters》《Journal of Energy and Power Engineering》《Science Bulletin》《Science China(Information Sciences)》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划天津市自然科学基金中国博士后科学基金更多>>
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Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template
《Chinese Physics B》2021年第11期532-537,共6页Qun-Si Yang Qing Liu Dong Zhou Wei-Zong Xu Yi-Wang Wang Fang-Fang Ren Hai Lu 
Project supported by the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20190302 and BK20201253).
Alpha particle radiation detectors with planar double Schottky contacts(DSC)are directly fabricated on 5-μm-thick epitaxial semi-insulating(SI)GaN:Fe film with resistivity higher than 1×10^(8)Ω·cm.Under 10 V bias,...
关键词：GAN alpha particle DETECTOR double Schottky contacts 
Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates被引量：5
《Chinese Physics B》2019年第6期414-418,共5页Xue Ji Wen-Xiu Dong Yu-Min Zhang Jian-Feng Wang Ke Xu 
Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0403002);the National Science Fund for Distinguished Young Scholars,China(Grant No.Y3CHC11001);the National Natural Science Foundation of China(Grant No.11604368)
One-port surface acoustic wave resonators(SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film substrates, respectively. The semi-insulating GaN substrates are grown by hydride vapor phase epita...
关键词：surface acoustic wave one-port resonator GALLIUM nitride(GaN) SEMI-INSULATING FE-DOPED 
Effect of de-trapping on carrier transport process in semi-insulating CdZnTe被引量：1
《Chinese Physics B》2015年第6期511-515,共5页郭榕榕 介万奇 查钢强 徐亚东 冯涛 王涛 杜卓同 
Project supported by the National Instrumentation Program,China(Grant No.2011YQ040082);the National Natural Science Foundation of China(Grant Nos.61274081,51372205,and 51202197);the National 973 Project of China(Grant No.2011CB610400),the China Postdoctoral Science Foundation(Grant No.2014M550509);the 111 Project of China(Grant No.B08040)
The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons ...
关键词：CDZNTE LBIC de-trapping electron transport process mobility 
4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
《Chinese Physics B》2014年第5期461-464,共4页袁昊 汤晓燕 张义门 张玉明 宋庆文 杨霏 吴昊 
Project supported by the National Natural Science Foundation of China(Grant Nos.61234006 and 61274079);the Key Specific Projects of Ministry of Education of China(Grant No.625010101);the Science Project of State Grid,China(Grant No.SGRI-WD-71-13-004)
Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes （SBDs） with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon （SIPOS） FP termination has been fabricated. The ...
关键词：4H-SIC Schottky-barrier diodes semi-insulating polycrystalline silicon field plates termination 
Effect of the Si-doped In_(0.49)Ga_(0.51)P barrier layer on the device performance of In_(0.4)Ga_(0.6)As MOSFETs grown on semi-insulating GaAs substrates被引量：1
《Chinese Physics B》2013年第7期463-466,共4页常虎东 孙兵 薛百清 刘桂明 赵威 王盛凯 刘洪刚 
the National Basic Research Program of China(Grant Nos.2011CBA00605 and 2010CB327501);the National Natural Science Foundation of China(Grant No.61106095);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-003)
In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the firs...
关键词：metal–oxide–semiconductor field-effect transistor INGAAS INGAP Al2O3 
Electrical and optical characteristics of vanadium in 4H-SiC被引量：2
《Chinese Physics B》2007年第5期1417-1421,共5页王超 张义门 张玉明 
Project supported by the National Natural Science Foundation of China （Grant No 60376001）, the National Basic Research Program of China （Grant No 2002CB311904） and the National Defense Basic Research Program of China （Grant No 51327020202）. Acknowledgments The authors would like to thank Li Cheng-Ji and Ye Xiao-Ling of Institute of Semiconductors, Chinese Academy of Sciences for measuring the temperaturedependent resistivity and absorption, respectively, and they also thank Ma Nong-Nong at the Centre of Electronic Materials Characterization of Tianjin Electronic Materials Research Institute for performing SIMS measurements.
A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 ℃. The resistivity at room temperat...
关键词：semi-insulating 4H-SiC vanadium ion implantation ANNEALING activation energy 
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