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ETCH: 作品数：54被引量：55H指数：4; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：范学丽章志兴徐斌刘钧松丁娟更多>>; 相关机构：上海富乐德智能科技发展有限公司北京京东方光电科技有限公司深圳市华星光电技术有限公司上海华力集成电路制造有限公司更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划上海市青年科技启明星计划国家高技术研究发展计划更多>>

Solution process formation of high performance,stable nanostructured transparent metal electrodes via displacement-diffusion-etch process被引量：1: 《npj Flexible Electronics》2022年第1期20-27,共8页Yaokang Zhang Xuyun Guo Jiaming Huang Zhiwei Ren Hong Hu Peng Li Xi Lu Zhongwei Wu Ting Xiao Ye Zhu Gang Li Zijian Zheng; The authors acknowledge the Research Grant Council of Hong Kong (15304919,15218517,C5037-18G);the Hong Kong Polytechnic University (ZVRP,8-8408,1-CDA5);Shenzhen Science and Technology Innovation Commission (JCYJ20200109105003940);the National Natural Science Foundation of China (51961165102);Guangdong-Hong Kong-Macao Joint Laboratory for PhotonicThermal-Electrical Energy Materials and Devices (GDSTC No.2019B121205001).; Transparent electrodes(TEs)with high chemical stability and excellent flexibility are critical for flexible optoelectronic devices,such as photodetectors,solar cells,and light-emitting diodes.Ultrathin metal electrode...; 关键词：TRANSPARENT DISPLACEMENT DIFFUSION

Parallel boron nitride nanoribbons and etch tracks formed through catalytic etching: 《Nano Research》2018年第9期4874-4882,共9页Armin Ansary Mohsen Nasseri Mathias J. Boland Douglas R. Strachan; One-dimensional （1D） catalytic etching was investigated in few-layer hexagonal boron nitride （hBN） films. Etching of hBN was shown to share a number of similarities with that of graphitic films. As in graphitic fi...; 关键词：hexagonal（hBN） one-dimensional catalytic etching HYDROGENATION etch tracks NANORIBBONS

A photoluminescence study of plasma reactive ion etching-induced damage in GaN: 《Journal of Semiconductors》2014年第11期16-19,共4页Z.Mouffak A.Bensaoula L.Trombetta; GaN films with reactive ion etching （RIE） induced damage were analyzed using photoluminescence （PL）. We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with pre...; 关键词：GAN etch damage PHOTOLUMINESCENCE reactive ion etching

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films: 《Plasma Science and Technology》2012年第10期915-918,共4页郑艳彬李光王文龙李秀昌姜志刚; Amorphous indium-gallium-zinc-oxide （a-IGZO） thin-film transistor （TFT） backplane technology is the best candidate for flat panel displays （FPDs）. In this paper, a-IGZO TFT structures are described. The effects ...; 关键词：IGZO TFT dry etch plasma

Electron Density and Optical Emission Measurements of SF_6/O_2 Plasmas for Silicon Etch Processes被引量：2: 《Plasma Science and Technology》2012年第4期316-320,共5页M.M.MORSHED S.M.DANIELS; supported by the EC Framework 7 IMPROVE research project (IR -2008-0013);the Science Foundation Ireland PRECISION project (08-SRC-I1411); This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6...; 关键词：OES hairpin probe SF6 O2 electron density atomic fluorine

A Study on Structural, Optical, Electrical and Etching Characteristics of Pure and L-Alanine Doped Potassium Dihydrogen Phosphate Crystals: 《Journal of Crystallization Process and Technology》2011年第3期55-62,共8页Ferdousi Akhtar Jiban Podder; Pure potassium dihydrogen phosphate (KDP) crystals and KDP doped with L-alanine have been grown by slow evaporation technique at room temperature. Grown crystals have been characterized using powder X-ray diffraction,...; 关键词：Amino Acid KDP Solution Growth FT-IR ELECTRICAL Conductivity ETCH PITS

Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl_2/BCl_3-Based Inductively Coupled Plasma被引量：5: 《Plasma Science and Technology》2011年第2期223-229,共7页D.S.RAWAL B.K.SEHGAL R.MURALIDHARAN H.K.MALIK; A study of Cl2/BCl3-based inductively coupled plasma （ICP） was conducted using thick photoresist mask for anisotropic etching of 50μm diameter holes in a GaAs wafer at a relatively high average etching rate for etc...; 关键词：GAAS inductively coupled plasma ETCHING ion energy etch yield

Optical Properties of CR-39 Track Etch Detectors Irradiated by Alpha Particles with Different Energies: 《材料科学与工程（中英文版）》2011年第1期26-31,共6页Mostafa Fawzy Eissa; 关键词：径迹探测器光学特性径迹蚀刻粒子辐照能量通量 CR 阿尔法光学性质

Fast patterning and dry-etch of SiN_x for high resolution nanoimprint templates: 《Journal of Semiconductors》2009年第6期138-141,共4页疏珍万景陆冰睿谢申奇陈宜方屈新萍刘冉; supported by the National High Technology Research and Development Program of China(No.2006AA03Z352);the Science and Technology Commission of Shanghai (No. 08QH14002);the Seed Funding for Key Project by Ministry of Education;the '985'Micro/Nanoelectronics Science and Technology Innovation Platform; We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography（EBL） and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the...; 关键词：SiNx templates NANOIMPRINT NEB-22 electron bean lithography reactive ion etch

Growth and passivation of aluminum etch tunnels at on-off controlling direct current in 6 wt.% HCI solution被引量：1: 《Rare Metals》2008年第2期205-209,共5页WANG Mei HE Yedong; This study was financially supported by Beijing Education Commission,China.; Growth and passivation of tunnels within Al foil by on-off controlling DC etching in 6 wt.% HCI solution has been investigated. It was found that, in a given etchant solution at a special temperature, the longest tunn...; 关键词：aluminum electrolytic capacitor tunnel length GROWTH PASSIVATION on-off controlling current

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