NON-PLANAR

作品数：27被引量：33H指数：3
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相关作者：欧文巩轲钱鹤李明更多>>
相关机构：中国科学院微电子研究所清华大学更多>>
相关期刊：《Plasma Science and Technology》《Frontiers of Information Technology & Electronic Engineering》《Acta Mathematica Sinica,English Series》《Chemical Research in Chinese Universities》更多>>
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High-current MoS transistors with non-planar gate configuration
《Science Bulletin》2021年第8期777-782,M0003,共7页Jun Lin Bin Wang Zhenyu Yang Guoli Li Xuming Zou Yang Chai Xingqiang Liu Lei Liao 
supported by the National Key Research and Development Program of China(2018YFA0703704 and2018YFB0406603);China National Funds for Distinguished Young Scientists(61925403);the National Natural Science Foundation of China(61851403,51872084,61704052,61811540408,and61704051);the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000);in partly by the Key Research and Development Plan of Hunan Province(2018GK2064)。
The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body.Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensi...
关键词：MoS_(2)transistors Omega-shaped gate NON-PLANAR High current density 
Bistable electrowetting device with non-planar designed controlling electrodes for display applications被引量：1
《Frontiers of Information Technology & Electronic Engineering》2019年第9期1289-1295,共7页Han ZHANG Xue-lei LIANG 
the National Natural Science Foundation of China(No.61621061);the National Key R&D Program of China(No.2016YFA0201902)。
Bistable electrowetting display(EWD)is a promising low-power electronic paper technology,where power is consumed only during the switching between two stable states;however,it is not required for state maintenance onc...
关键词：BISTABLE ELECTROWETTING NON-PLANAR Controlling ELECTRODES Low voltage High CONTRAST 
L_g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n^+-GaN layer by MOCVD被引量：2
《Chinese Physics B》2014年第12期508-512,共5页黄杰 黎明 邓泽华 刘纪美 
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401373);the Fundamental Research Funds for Central Universities,China(Grant No.XDJK2013B004);the Research Fund for the Doctoral Program of Southwest University,China(Grant No.SWU111030)
High-performance Al Ga N/Ga N high electron mobility transistors（HEMTs） grown on silicon substrates by metal–organic chemical-vapor deposition（MOCVD） with a selective non-planar n-type Ga N source/drain（S/D） re...
关键词：Ga N HEMTS S/D（S/D） regrowth MOCVD 
The total ionizing dose effects of non-planar triple-gate transistors
《Journal of Semiconductors》2013年第9期49-52,共4页刘诗尧 贺威 曹建民 黄思文 
supported by the National Science Foundation for Young Scholars of China(No.11105092);the Shenzhen Science and Technology Development Funds(Nos.JC201005280565A,JC201005280558A,GJHS20120621142118853)
This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, di...
关键词：SILICON-ON-INSULATOR total ionizing dose effects pseudo-MOS non-planar triple-gate transistors 
Synthesis and Luminescent Properties of Iridium Complexes with Reduced Concentration Quenching Effect
《Chemical Research in Chinese Universities》2013年第4期686-689,共4页ZHANG Ll-ying L1 Bin WANG Jian-xing 
Supported by the Basic Research Foundation of Henan University of Technology, China（No.llJCYJ17） and the Science Foundation of Henan University of Technology, China（No.2009BS036）.
Three novel cyclometalated ligands 1-benzyl-2-phenyl-lH-benzoimidazole（BPBM）, 1-（4-methoxy- benzyl）-2-（4-methoxy-phenyl）-lH-benzoimidazole（MBMPB） and 4-[2-（4-dimethylamino-phenyl）-benzoinidazol-1- ylmethyl]-...
关键词：Green-emitting Iridium complex Bulky non-planarity substituent 
Novel devices and process for 32 nm CMOS technology and beyond被引量：1
《Science in China(Series F)》2008年第6期743-755,共13页WANG YangYuan ZHANG Xing LIU XiaoYan HUANG Ru 
The development of next 32 nm generation and below needs innovations on not only device structures, but also fabrication techniques and material selections. Among those promising technologies, new gate structures as h...
关键词：CMOS technology HIGH-K metal gate non-planar MOSFET quasi-ballistic transport 
Design of 8-like Non-planar Cavity被引量：1
《Semiconductor Photonics and Technology》2008年第4期229-233,共5页YANG Jian-qiang 
For eliminating the negative effects of lock-in region and optical elements in cavity,the non-planar structure is strongly needed in laser gyro. In this paper,the theoretical formula of rotatory effect in non-planar c...
关键词：LASERS non-planar cavity 8-like plane cavity rotatory effect 
Transverse modes of a diode-laser pumped monolithic unidirectional non-planar ring laser被引量：1
《Chinese Optics Letters》2003年第3期157-159,共3页吴克瑛 杨苏辉 魏光辉 
Diode-laser pumped monolithic single-frequency non-planar ring laser has the advantages of compactness, reliability and high efficiency. But when the pump power is high enough, the thermal effect will be serious and t...
关键词：Optically pumped lasers Ray tracing Semiconductor lasers Thermal effects 
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