SELF-ALIGNED

作品数：34被引量：14H指数：2
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相关领域：电子电信更多>>
相关作者：刘新宇齐鸣刘训春苏树兵王润梅更多>>
相关机构：中国科学院微电子研究所中国科学院复旦大学更多>>
相关期刊：《Chinese Physics Letters》《Journal of Microelectronic Manufacturing》《Chinese Optics Letters》《Frontiers of physics》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划上海市自然科学基金中国科学院知识创新工程更多>>
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Self-aligned TiO_(x)-based 3D vertical memristor for a high-density synaptic array
《Frontiers of physics》2024年第6期125-137,共13页Subaek Lee Juri Kim Sungjun Kim 
supported in part by the National Research Foundation of Korea(NRF)grant funded by the Ministry of Science and ICT(No.2021R1C1C1004422);Korea Institute of Energy Technology Evaluation and Planning(KETEP)grant funded by the Korea government(MOTIE)under Grant No.20224000000020.
The emerging nonvolatile memory,three-dimensional vertical resistive random-access memory(VRRAM),inspired by the vertical NAND struc-ture,has been proposed to replace NAND flash memory which has reached its integratio...
关键词：3D integration resistive switching vertical RRAM synaptic plasticity self-aligned insulator 
First demonstration of a self-aligned p-channel GaN back gate injection transistor
《Journal of Semiconductors》2024年第11期69-73,共5页Yingjie Wang Sen Huang Qimeng Jiang Jiaolong Liu Xinhua Wang Wen Liu Liu Wang Jingyuan Shi Jie Fan Xinguo Gao Haibo Yin Ke Wei Xinyu Liu 
supported in part by the National Key Research and Development Program of China under Grant2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208;Grant 62304252;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics。
In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modula...
关键词：GAN p-FETs SELF-ALIGNMENT back gate threshold hysteresis conductivity modulation 
Self-aligned dual-beam superresolution laser direct writing with a polarization-engineered depletion beam
《Photonics Research》2024年第6期1194-1200,共7页GUOLIANG CHEN DEWEI MO JIAN CHEN QIWEN ZHAN 
National Natural Science Foundation of China(12274299,92050202);Science and Technology Commission of Shanghai Municipality(22QA1406600);Natural Science Foundation of Shanghai Municipality(20ZR1437600).
A fiber-based,self-aligned dual-beam laser direct writing system with a polarization-engineered depletion beam is designed,constructed,and tested.This system employs a vortex fiber to generate a donut-shaped,cylindric...
关键词：POLARIZATION BEAM depletion 
Self-aligned single-electrode actuation of tangential and wineglass modes using PMN-PT
《Microsystems & Nanoengineering》2023年第3期43-49,共7页Ozan Erturk Kilian Shambaugh Ha-Seong Park Sang-Goo Lee Sunil A.Bhave 
This work was supported by DARPA MTO PRIGM-AIMS program agreement No.W911NF1820180.S.-G.L.and H.-S.P.were also supported by Korea Research Institute for Defense Technology Planning and Advancement(KRIT),F210001.The samples were fabricated at Birck Nanotechnology Center at Purdue University.
Considering the evolution of rotation sensing and timing applications realized in micro-electro-mechanical systems(MEMS),flexural mode resonant shapes are outperformed by bulk acoustic wave(BAW)counterparts by achievi...
关键词：RESONATOR ELECTRODE piezoelectric 
In situ growth of large-area and self-aligned graphene nanoribbon arrays on liquid metal被引量：1
《National Science Review》2021年第12期32-40,共9页Le Cai Wanzhen He Xudong Xue Jianyao Huang Ke Zhou Xiahong Zhou Zhiping Xu Gui Yu 
supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB 30000000);the National Natural Science Foundation of China(22021002and 61390502);the Beijing National Laboratory for Molecular Sciences(BNLMS-CXXM-202101)。
Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices,whereas graphene nanoribbons(GNRs) are promising semiconductors because of their bandgap-opening feature. How...
关键词：graphene nanoribbons template-free chemical vapor deposition comb-like etching SELF-ALIGNMENT in situ growth 
Self-aligned fiber-based dual-beam source for STED nanolithography被引量：2
《Chinese Optics Letters》2021年第7期82-86,共5页Jian Chen Guoliang Chen Qiwen Zhan 
supported by the National Natural Science Foundation of China (No.61805142);the Shanghai Science and Technology Committee (No.19060502500);the Natural Science Foundation of Shanghai (No.20ZR1437600)。
A fiber-based source that can be exploited in a stimulated emission depletion(STED) inspired nanolithography setup is presented.Such a source maintains the excitation beam pulse, generates a ring-shaped depletion beam...
关键词：NANOLITHOGRAPHY vortex fiber direct laser writing STED controlled fabrication 
Self-aligned on-chip coupled photonic devices using individual cadmium sulfide nanobelts
《Nano Research》2020年第5期1413-1418,共6页Jacob S.Berger Ho-Seok Ee Mingliang Ren Daksh Agarwal Wenjing Liu Ritesh Agarwal 
Nanowires(NWs)and nanobelts(NBs)have been widely studied and fabricated into a variety of nanoscale devices such as light emitting diodes(LEDs),lasers and biosensors.These unique materials have attracted sustained att...
关键词：cadmium sulfide NANOBELTS NANOWIRES light emitting diode optical interconnects 
Key Process Approach Recommendation for 5 nm Logic Process Flow with EUV Photolithography
《Journal of Microelectronic Manufacturing》2020年第1期17-22,共6页Yushu Yang Yanli Li Qiang Wu Jianjun Zhu Shoumian Chen 
I thank the higher management team from Shanghai IC R&D Company for the support of this work.
5 nm logic process is the current leading-edge technology which is under development in world-wide leading foundries.In a typical 5 nm logic process,the Fin pitch is 22~27 nm,the contact-poly pitch(CPP)is 48?55 nm,and...
关键词：5nm LOGIC Process EUV metal gate cut SAC BAC SELF-ALIGNED LELE 
A Photolithography Process Design for 5 nm Logic Process Flow被引量：2
《Journal of Microelectronic Manufacturing》2019年第4期45-55,共11页Qiang Wu Yanli Li Yushu Yang Yuhang Zhao 
With the introduction of EUV lithography,the photolithographic process in 5 nm logic process can be simplified to use mostly single exposure method.In a typical 5 nm logic process,the contact-poly pitch(CPP)is 44-50 n...
关键词：5 nm Logic Process EUV SADP self-aligned LELE RCWA stochastics mask 3D scattering 
Innovation on Line Cut Methods of Self-aligned Multiple Patterning
《Journal of Microelectronic Manufacturing》2019年第3期1-6,共6页Jeff Shu 
Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for industry use.Theoretically any small size of pitch can be achieved by repeating SADP on same wafer...
关键词：SELF-ALIGNED MULTIPLE PATTERNING SAMP SELF-ALIGNED double PATTERNING SADP selfaligned quadruple PATTERNING SAQP line CUT edge PLACEMENT error 
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