Y2000-62031-1 0006470VLSI 设计中等离子体感应损伤条件的识别=Identifi-cation of plasma induced damage conditions in VLSI de-signs[会,英]/Simon,P.& Maly,W.//1999 IEEE In-ternational Conference on Microelectronic Test Struc-
Y99-61590-201 0000249利用一种新的电荷抽运分析法对 MOS 晶体管中 Si-SiO2界面陷阱层参数的抽取=Extraction of the Si-SiO2interface trap layer parameters in MOS transistors usinganew charge pumping ana...
Y99-61590-7 0001111光刻距离的测量对双极晶体管匹配的影响=Measure-ment of lithographical proximity effects on matching ofbipolar transistors[会,英]/Tuinhout,H.P.& Peters,W.C.M.//1998 IEEE International Conference on Mi-...
Y99-61525-321 0001120不同硅衬底上虚拟器件寄生参数的抽取=Extractionof parasitic parameters of dummy devices on different sili-con substrates[会,英]/Chen,L.P.& Ho,Y.P.//1998 IEEE Radio Frequency Integrated Circuits Symp...
Y99-61511-176 9913343高速 CMOS 振荡器中的随机抖动效应=Effects of ran-dom jitter on high-speed CMOS oscillators[会,英]/Chen,Y.Q.& Koneru,S.//1998 IEEE InternationalSymposium on Circuits and Systems,Vol.1 of 6.—176~18...