supported by the National Key Research and Development Program of China(Grant No.2022YFB3608600);the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009);the National Natural Science Foundation of China(Grant No.61927806)。
As an ultra-wide bandgap semiconductor,diamond garners significant interest due to its exceptional physical properties^([1–3]).These superior characteristics make diamonds highly promising for applications in power e...
The National Natural Science Foundation of China(No.61774014);Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.KYZZ15_0331);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.19KJB510060)
With the device size gradually approaching the physical limit, the small changes of the Si(001)/SiO 2 interface in silicon-based devices may have a great impact on the device characteristics. Based on this, the bridge...
Supported by the National Natural Science Foundation of China under Grant No 11374058
Current-voltage electrical characteristics of Er silicide/Si(001) nanocontacts are measured in situ in a scanning tunneling microscopy system. Introduced as a new technique to suppress surface leakage conduction on...
Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, ...
The interaction between graphene and germanium surfaces was investigated using a combination of microscopic and macroscopic experimental techniques and complementary theoretical calculations.Density functional theory ...
Project supported by the National Science and Technology Major Project of Science and Technology of China(Grant No.2011ZX02708);the National Natural Science Foundation of China(Grant No.61504137)
This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si (001) substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density o...