云南高校图书馆联盟文献共享服务平台- ALGAINP

ALGAINP: 作品数：115被引量：162H指数：6; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：沈光地陈良惠马骁宇范广涵梁静秋更多>>; 相关机构：山东浪潮华光光电子股份有限公司北京工业大学山东华光光电子股份有限公司中国科学院更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划北京市自然科学基金更多>>

Fabrication of flexible AlGaInP LED被引量：2: 《Journal of Semiconductors》2020年第3期36-38,共3页Qiaoli Liu Yajie Feng Huijun Tian Xiaoying He Anqi Hu Xia Guo; supported by the National Key R&D Program of China (2016YFB0400603); Flexible light-emitting diodes(LEDs)are highly desired for wearable devices,flexible displays,robotics,biomedicine,etc.Traditionally,the transfer process of an ultrathin wafer of about 10–30μm to a flexible substrat...; 关键词：light-emitting diodes(LEDs) FLEXIBLE TRANSFER performance

Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method: 《Journal of Semiconductors》2016年第6期97-100,共4页文静文玉梅李平王三山; supported by the National Natural Science Foundation of China(No.61006053); This study proposes a practical method to estimate the junction temperature of AlGaInP LEDs using the luminescence spectra method.The peak wavelength shift of LEDs is due to the energy band gap shrinking.The temperatu...; 关键词：light emitting diode junction temperature luminescence bandgap

Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector: 《Journal of Semiconductors》2015年第2期106-110,共5页左致远夏伟王钢徐现刚; Project supported by the Post Doctoral Innovation Fund of Shandong Province(No.201303002);the Shandong Province Young and MiddleAged Scientists Research Awards Fund(No.BS2013DX007);the the National Basic Research Program of China(No.6131550102); We demonstrate and introduce here a pyramidally patterned metal reflector into wafer-bonding AlGaInP light emitting diodes （LEDs） to improve the light extraction efficiency by using a photo-assisted chemical etched ...; 关键词：pyramidally patterned reflector light emitting diodes wafer-bonding light extraction efficiency

A 2.05 eV AlGaInP sub-cell used in next generation solar cells被引量：1: 《Journal of Semiconductors》2014年第9期83-86,共4页陆宏波李欣益张玮周大勇石梦奇孙利杰陈开建; An Al0.13GalnP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE co...; 关键词：broadband solar cell HETEROJUNCTION

Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode: 《Journal of Semiconductors》2014年第2期67-71,共5页刘宇安罗文浪; The correlation model between dark current RTS noise and defects for A1GalnP multiple-quantum-well laser diode is derived. Experimental results show that dark current RTS noise caused carrier number fluctuations at th...; 关键词：random telegraph signal noise DEFECT A1GaInP laser diode

Absorption of photons in the thin film AlGalnP light emitting diode: 《Journal of Semiconductors》2011年第1期72-74,共3页高伟郭伟玲邹德恕蒋文静刘自可沈光地; Project supported by the Natural Science Foundation of Beijing(No.4092007);the National High Technology Research and Development Program of China(Nos.2008AA03Z402,2009AA03A1A3); The path of photons in the thin film （TF） light emitting diode （LED） was analyzed. The reflectivity of reflector in AlGaInP TF LED with and without the AlGaInP layer was contrasted. The absorption of the AlGaInP l...; 关键词：LED ALGAINP thin film

Thin film AlGaInP light emitting diodes with different reflectors: 《Journal of Semiconductors》2010年第12期80-82,共3页高伟郭伟玲邹德恕秦圆蒋文静沈光地; Project supported by the Natural Science Foundation of Beijing,China(No.4092007);the National High Technology Research and Development Program of China(Nos.2008AA03Z402,2009AA03A1A3); The reflectivity versus incident angle of a GaP/Au reflector, a GaP/SiO2/Au triple ODR （omni-directional reflector） and a GaP/ITO/Au triple ODR was calculated. Compared to A1GaInP LEDs with a GaAs absorbing substrat...; 关键词：LE ALGAINP ODR

AlGaInP LEDs with surface anti-reflecting structure: 《Journal of Semiconductors》2009年第8期95-97,共3页陈依新沈光地李建军韩金茹徐晨; supported by the National High Technology Research and Development Program of China (No.2006AA03A121);the State Key Development Program for Basic Research of China (No.2006CB604900);the Fund of Beijing University of Technology (No.ykj-2007-1073); A kind of AlGaInP light emitting diode （LED） with surface anti-reflecting structure has been introduced to solve the problems of low light efficiency and restricted luminous intensity. The new structure can be demon...; 关键词：quantum efficiency AlGaInP LEDs anti-reflecting structure

Reliability of AlGaInP light emitting diodes with an ITO current spreading layer: 《Journal of Semiconductors》2009年第6期61-63,共3页高伟郭伟玲朱彦旭蒋文静沈光地; supported by the the National High Technology Research and Development Program of China(Nos.2008AA03Z402,SQ200703Z431230);the Beijing National Science Foundation (No. 4092007);the Talent Promoting Education of Beijing, China (No. 05002015200504); Three aging experiments were performed for AlGaInP light emitting diodes（LED） with or without indium tin oxide（ITO）,which is used as a current spreading layer.It was found that the voltage of the LED with an ITO f...; 关键词：indium tin oxide A1GaInP light-emitting diode RELIABILITY

Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode: 《Journal of Semiconductors》2008年第7期1274-1277,共4页刘运涛宋国锋陈良惠; We solve the single mode coupled rate equations by computer,simulate the behavior of a gain switch of an AlGaInP red light semiconductor laser diode,and find the characteristic of FWHM of pulses changing with the ampl...; 关键词：red light semiconductor laser diode gain switch PULSE

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