云南高校图书馆联盟文献共享服务平台- BJT

BJT: 作品数：163被引量：158H指数：6; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：胡小春郝跃秦海鸿黄昌清张鹤鸣更多>>; 相关机构：西安电子科技大学电子科技大学湖南大学大连外国语学院更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家教育部博士点基金中央高校基本科研业务费专项资金国家高技术研究发展计划更多>>

Simulation study of a 4H-SiC lateral BJT for monolithic power integration: 《Journal of Semiconductors》2018年第12期81-84,共4页Shiwei Liang Jun Wang Fang Fang Linfeng Deng; Project supported by the National Natural Science Foundation of China(No.51577054); Power integration based on 4 H-SiC is a very promising technology for high-frequency and high-temperature power electronics applications. However, the fabrication processes used in Si BiCMOS technology is not applicab...; 关键词：SiC BJT integrated circuit current gain power integration

Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS: 《Journal of Semiconductors》2013年第9期53-57,共5页蒋永恒罗小蓉李燕妃王沛范叶周坤王琦胡夏融张波; supported by the National Natural Science Foundation of China(Nos.61176069,60976060,51308020304); A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to ...; 关键词：thin film SOI LDMOS body contact floating body effect parasitic BJT effect

Novel SEU hardened PD SOI SRAM cell: 《Journal of Semiconductors》2011年第11期162-166,共5页谢成民王忠芳汪西虎吴龙胜刘佑宝; A novel SEU hardened 10T PD SOI SRAM cell is proposed. By dividing each pull-up and pull-down transistor in the cross-coupled inverters into two cascaded transistors, this cell suppresses the parasitic BJT and source-...; 关键词：SEU PD SOI SRAM parasitic BJT mixed-mode simulation

Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge: 《Journal of Semiconductors》2011年第10期44-48,共5页刘进陈永光谭志良杨洁张希军王振兴; Project supported by the National Natural Science Foundation ofChina(No.60871066);the National Key Laboratory for Electromagnetic Environment and Protection Technology Fund,China(No.9140C87020410JB3403); Electrostatic discharge（ESD） phenomena involve both electrical and thermal effects,and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability.Therefore, t...; 关键词：microwave BJT ESD failure mechanism accumulation effect

Effect of collector bias current on the linearity of common-emitter BJT amplifiers: 《Journal of Semiconductors》2010年第12期75-79,共5页李琨滕建辅轩秀巍; Project supported by the Tianjin Natural Science Foundation,China(No.09JCYBJC00700); Using a Volterra series, an explicit formula is derived for the connection between input 3rd-order intercept point and collector bias current （IcQ） in a common-emitter bipolar junction transistor amplifier. The anal...; 关键词：IIP3 collector bias current BJT dynamic bias current

A curvature calibrated bandgap reference with base-emitter current compensating in a 0.13μm CMOS process: 《Journal of Semiconductors》2010年第11期82-87,共6页马卓谭晓强谢伦国郭阳; Project supported by the National New Century Excellent Talents in University,Program for Changjiang Scholars and Innovative Research Team in University; In bandgap references,the effect caused by the input offset of the operational amplifier can be effectively reduced by the utilization of cascade bipolar junction transistors（BJTs）.But in modern CMOS logic processes...; 关键词：bandgap reference CMOS BJT base current compensating

EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy被引量：4: 《Journal of Semiconductors》2010年第4期32-36,共5页席晓文柴常春任兴荣杨银堂张冰洪潇; supported by the National Natural Science Foundation of China(No.60776034).; The response of a bipolar transistor （BJT） under a square-wave electromagnetic pulse （EMP） with different injecting voltages is investigated. Adopting the curve fitting method, the relationship between the burnout...; 关键词：BJT square-wave EMP injecting voltage damage energy

4H-SiC BJT的Early电压分析: 《Journal of Semiconductors》2007年第9期1433-1437,共5页韩茹李聪杨银堂贾护军; 教育部重点科技(批准号:02074);国家部委预研(批准号:513080302)资助项目~~; 通过考虑缓变基区4H-SiC BJT电流增益及器件内4种载流子复合过程,计算了4H-SiC BJT的厄利(Early)电压,分析了Early电压及电流增益的温度特性.结果表明,其他参数不变时,Early电压VA随发射区掺杂浓度NE增大而增大,随集电区掺杂浓度NC增大...; 关键词：碳化硅双极晶体管 Early电压共射极电流增益温度

辐照对SiGe HBT增益的影响: 《Journal of Semiconductors》2007年第z1期430-434,共5页孟祥提王吉林黄强贾宏勇陈培毅钱佩信; 国家自然科学基金资助项目(批准号:10075029,10375034); 比较了电子和γ射线辐照后SiGe HBT和Si BJT直流增益β的变化.在Vbe≤0.5V时,较高剂量辐照时SiGe HBT的放大倍数辐照损伤因子d(β)为负;在Vbe≥0.5V时,SiGe HBT的d(β)远比Si BJT的小.SiGe HBT有更好的抗辐照性能.针对测得的一些电子陷...; 关键词：SiGe HBT 电子辐照 Γ射线辐照 Si BJT 直流增益

精确预计SiBJT微波功率器件峰值结温的方法: 《Journal of Semiconductors》2001年第5期646-651,共6页张鸿欣; 国家自然科学基金资助项目! (698760 2 9)&&; 三维全热程热电一体地模拟了 Si BJT微波功率器件 .热场计算包括从芯片的有源区经芯片 -粘接层 -基片 -粘接层 -底座直到固定于 70℃的安装台面的整个散热过程 .在处理热电正反馈时把有源区的 6 0个基本单元 (子胞 )当成 6 0个并联子胞...; 关键词：可靠性热模拟双极微波功率器件 BJT 峰值结温硅

BJT