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GETTERING: 作品数：17被引量：7H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：阙端麟李晓强余学功杨德仁张斌更多>>; 相关机构：浙江大学清华大学北京工业大学北京有色金属研究总院更多>>; 相关期刊：《Journal of Semiconductors》《Frontiers in Energy》《Chinese Physics Letters》《Transactions of Nonferrous Metals Society of China》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划更多>>

Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment: 《Journal of Semiconductors》2017年第11期60-65,共6页Xiaoyu Chen Youwen Zhao Zhiyuan Dong Guiying Shen Yongbiao Bai Jingming Liu Hui Xie Jiangbian He; Project supported by the National Natural Science Foundation of China(Nos.61474104,61504131); SiNx/SiOx passivation and double side P-diffusion gettering treatment have been used for the fabrication of c-Si solar cells. The solar cells fabricated have high open circuit voltage and short circuit current after t...; 关键词：c-Si solar cell double diffusion SiNx/SiOx passivation

Laser enhanced gettering of silicon substrates: 《Frontiers in Energy》2017年第1期23-31,共9页Daniel CHEN Matthew EDWARDS Stuart WENHAM Malcolm ABBOTT Brett HALLAM; One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry...; 关键词：GETTERING multicystaline SILICON impurities laser doping

Impact of thermal processes on multi-crystalline silicon: 《Frontiers in Energy》2017年第1期32-41,共10页Moonyong KIM Phillip HAMER Hongzhao LI David PAYNE Stuart WENHAM Malcolm ABBOTT Brett HALLAM; Fabrication of modem multi-crystalline silicon solar cells involves multiple processes that are thermally intensive. These include emitter diffusion, thermal oxida- tion and firing of the metal contacts. This paper il...; 关键词：GETTERING grain boundaries HYDROGEN IMPURITIES OXIDATION PASSIVATION solar cell

A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial porous silicon layer: 《Journal of Semiconductors》2011年第3期6-9,共4页张彩珍王永顺汪再兴; Project supported by the Scientific and Technological Development Plan of Lanzhou City of China(No.2009-1-1);the Natural Science Fund of Gansu Province(No.096RJZA091); A new two-step phosphorous diffusion gettering（TSPDG） process using a sacrificial porous silicon layer（PSL） is proposed.Due to a decrease in high temperature time,the TSPDG（PSL） process weakens the deterioration...; 关键词：two-step phosphorous diffusion gettering effective lifetime porous silicon layer solar-grade Si

Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells被引量：3: 《Transactions of Nonferrous Metals Society of China》2011年第3期691-696,共6页李晓强杨德仁余学功阙端麟; Projects (60906002, 50832006) supported by the National Natural Science Foundation of China;Project (2009QNA4007) supported by the Fundamental Research Funds for the Central Universities, China; The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively couple...; 关键词：multicrystalline silicon Cu precipitate phosphorus gettering DEFECTS carrier lifetime

Oxygen gettering in Si by He ion implantation-induced cavity layer: 《Nuclear Science and Techniques》2009年第4期202-207,共6页OU Xin ZHANG Bo WU Aimin ZHANG Miao WANG Xi; Oxygen gettering in Si by the He induced cavity layer was investigated in this work.A cavity layer was generated in Si sample by He implantation and annealing.The morphology of the cavity layer depending on the dose o...; 关键词：氦离子空穴核技术能级

Effect of Rapid Thermal Annealing Ambient on Gettering Efficiency and Surface Microstructure in 300mm CZ Silicon Wafers: 《Journal of Semiconductors》2008年第5期822-826,共5页冯泉林何自强常青周旗钢; 国家高技术研究发展计划资助项目(批准号:2002AA3Z1110)~~; The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demon...; 关键词：300mm CZ silicon wafer denuded zone intrinsic gettering RTA XPS AFM

Modelling of Gettering by Mechanical Damage of Metallic Impurities in Silicon: 《Chinese Physics Letters》2006年第11期3058-3060,共3页F. Ayad M. Remram; Reducing the concentration of the metallic impurities present in silicon-based electronic components plays a vital role in manufactures. Gettering by induced mechanical damage is one of the methods used in neutralizin...; 关键词：DIFFUSION GOLD

Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages被引量：1: 《Journal of Semiconductors》2006年第2期294-297,共4页贾云鹏张斌孙月辰亢宝位; 国家自然科学基金(批准号:60376035);北京市教委(批准号:2002KG009)资助项目~~; A new lifetime control technique-localized platinum lifetime control （LPLC） is introduced. Silicon samples are implanted with 550keV protons at dosages from 1 × 10^13 to 5 × 10^14 cm^-2. Subsequently, platinum dif...; 关键词：PLATINUM DLTS hydrogen implantation INTERSTITIAL

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion被引量：2: 《Tsinghua Science and Technology》2004年第2期242-245,共4页刘祖明 Souleymane K Traore 张忠文罗毅; The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utiliza-tion is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the c...; 关键词：polycrystalline gettering grain boundaries passivation porous silicon heavy phosphorous diffusion

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