云南高校图书馆联盟文献共享服务平台- INGAN/GAN

INGAN/GAN: 作品数：210被引量：253H指数：7; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李国强张国义张荣谢自力赵德刚更多>>; 相关机构：中国科学院北京大学华南理工大学南京大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划江苏省自然科学基金更多>>

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections: 《Chinese Physics Letters》2015年第2期143-147,共5页RAJABI Kamran 曹文彧 SHEN Tihan 季清斌贺娟杨薇李磊李丁王琪胡晓东; Supported by the National Natural Science Foundation of China under Grant Nos 61334005,51272008 and 60990314;the Beijing Municipal Science and Technology Project under Grant No H030430020000;the National Basic Research Program of China under Grant Nos 2012CB619304 and 2012CB619306; Introducing a thin InGaN interlayer with a relatively lower indium content between the quantum well （QW） and barrier results in a step-like InxGa1-xN/GaN potential barrier on one side of the QW. This change in the a...; 关键词：INGAN The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array被引量：1: 《Chinese Physics B》2014年第12期559-563,共5页陈湛旭万巍张佰君何影记金崇君; Project supported by the National Natural Science Foundation of China(Grant Nos.10774195,U0834001,10974263,11174374,11174061,and 10725420);the Key Program of Ministry of Education,China(Grant No.309024);the New Century Excellent Talents in University,the National Basic Research Program of China(Grant No.2010CB923200);the Natural Science Foundation of Guangdong Province,China(Grant No.S2013010015795); The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence（PL） properties of blue-emitting In Ga N/Ga N quantum wells（QWs） is studied. Arrays of silver nanoparticles are fabric...; 关键词：light-emitting devices PHOTOLUMINESCENCE metallic nanoparticle nanosphere lithography

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure: 《Chinese Physics B》2013年第7期415-419,共5页曹文彧贺永发陈钊杨薇杜为民胡晓东; Project supported by the National Basic Research Program of China(Grant No.2012CB619304);the National Natural Science Foundation of China(Grant Nos.61076013 and 51272008);the Beijing Municipal Science and Technology Project,China(Grant No.H030430020000); The electroluminescence （EL） and photoluminescence （PL） spectra of InGaN/GaN multiple quantum wells （MQWs） with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection curr...; 关键词：ELECTROLUMINESCENCE quantum-confined Stark effect InGaN/GaN quantum wells laser diode

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence: 《Chinese Physics Letters》2013年第7期247-250,共4页WANG Wen-Jie CHEN Peng YU Zhi-Guo LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei ZHAO Hong HAN Ping SHI Yi ZHANG Rong ZHENG You-Dou; Supported by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China under Grant Nos 61176063,60990311,60820106003,60906025,and 60936004;the Natural Science Foundation of Jiangsu Province under Grant Nos BK2008019,BK2010385,BK2009255,and BK2010178;the Research Funds from NJUYangzhou Institute of Optoelectronics.; We report on the photoluminescent characteristics of InGaN/GaN multiple quantum well(MQW)nanorod arrays with high internal quantum efficiency.The InGaN/GaN MQWs are grown by metalorganic chemical vapor deposition on c...; 关键词：INGAN/GAN technique. EFFICIENCY

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells: 《Chinese Physics B》2013年第6期666-669,共4页李亮赵德刚江德生刘宗顺陈平吴亮亮乐伶聪王辉杨辉; supported by the National Natural Science Foundation for Distinguished Young Scholars,China (Grant No. 60925017);the National Natural Science Foundation of China (Grant Nos. 10990100,60836003,60976045,61223005,and 61176126);the National Basic Research Program of China (Grant No. 2007CB936700); InGaN/GaN p-i-n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition. The effects of the thickness and dislocation densi...; 关键词：nitride materials crystal growth solar cell X-ray diffraction

Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well被引量：1: 《Chinese Physics B》2012年第10期522-526,共5页陈钊杨薇刘磊万成昊李磊贺永发刘宁炀王磊李丁陈伟华胡晓东; Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013,51102003,and 60990313);the National Basic Research Program of China (Grant No. 2012CB619304);the Specialized Research Fund for the Doctoral Program of Higher Education,China (Grant No. 20100001120014); The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wav...; 关键词：efficiency droop alleviation InGaN/GaN triangular quantum well blue light emitting diode

Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells: 《Chinese Physics Letters》2012年第7期276-279,共4页YU Zhi-Guo CHEN Peng YANG Guo-Feng LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei HAN Ping SHI Yi ZHANG Rong ZHENG You-Dou; Supported by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China(61176063,60990311,60820106003,60906025,60936004);The Natural Science Foundation of Jiangsu Province(BK2008019,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Optoelectronics.; The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied.The samples were etched by inductively coupled plasma (ICP) etching via a selfassemb...; 关键词：INGAN/GAN MEASUREMENT EFFICIENCY

High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45V: 《Chinese Physics Letters》2012年第6期295-298,共4页ZHANG Dong-Yan ZHENG Xin-He LI Xue-Fei WU Yuan-Yuan WANG Jian-Feng YANG Hui; Supported by the Joint Projects under Grant Nos Y1AAQ11001 and Y1EAQ31001;the Suzhou Solar Cell Research Project under Grant No ZXJ0903;the Ministry of Science and Technology of China under Grant No 2010DFA22770.; We report InGaN/GaN multi-quantum well (MQW) solar cells with a comparatively high open-circuit voltage and good concentration properties.Thc open circuit voltage (Voc) keeps increasing logarithmically with concentrat...; 关键词：INGAN/GAN SOLAR QUANTUM

图形化蓝宝石衬底上InGaN/GaN多量子阱发光二极管的光谱特性研究被引量：2: 《光谱学与光谱分析》2012年第1期7-10,共4页颜建钟灿涛于彤军徐承龙陶岳彬张国义; 国家重点基础研究发展计划项目(2011CB301904,2011CB301905);国家高技术研究发展计划项目(2009AA03A198);国家自然科学基金项目(61076012,61076013)资助; 运用电致发光(EL)和光致发光(PL)实验,分析了图形化蓝宝石衬底(PSSLEDs)和常规平面蓝宝石衬底(C-LEDs)InGaN/GaN多量子阱发光二极管的光谱特性。对比EL谱,发现PSSLEDs拥有更强的光功率和更窄的半峰宽(FWHM),说明PSSLEDs具有较高的晶体...; 关键词：图形化蓝宝石衬底发光二极管峰值波长极化场 EFFICIENCY droop

Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED被引量：1: 《Chinese Physics Letters》2011年第11期249-252,共4页WANG Jia-Xing WANG Lai HAO Zhi-Biao LUO Yi; by the National Basic Research Program of China under Grant Nos 2011CB301902 and 2011CB301903;the National High-Technology Research and Development Program of China under Grant Nos 2011AA03A112,2011AA03A106,and 2011AA03A105;the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(No 2011BAE01B07);the National Natural Science Foundation of China under Grant Nos 60723002,50706022,60977022 and 51002085;the Beijing Natural Science Foundation under Grant No 4091001.; In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well(MQW)light emitting diodes(LEDs),a reasonable model is set up,taking all the possible factor(carrier delocalizatio...; 关键词：INGAN/GAN LED INJECTION

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