云南高校图书馆联盟文献共享服务平台- LDMOS

LDMOS: 作品数：423被引量：340H指数：7; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李肇基张波乔明孙伟锋方健更多>>; 相关机构：电子科技大学东南大学上海华虹宏力半导体制造有限公司西安电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划中国博士后科学基金更多>>

Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness被引量：1: 《Chinese Physics B》2021年第6期516-520,共5页Jie Xu Nai-Long He Hai-Lian Liang Sen Zhang Yu-De Jiang Xiao-Feng Gu; supported by the National Natural Science Foundation of China (Grant No. 61504049);the China Postdoctoral Science Foundation (Grant No. 2016M600361);the Fundamental Research Funds for the Central Universities,China (Grant No. JUSRP51510)。; A novel terminal-optimized triple RESURF LDMOS(TOTR-LDMOS) is proposed and verified in a 0.25-μm bipolarCMOS-DMOS(BCD) process. By introducing a low concentration region to the terminal region, the surface electric f...; 关键词：lateral double-diffused MOSFET(LDMOS) terminal-optimization breakdown voltage electrostatic discharge

A super-junction SOI-LDMOS with low resistance electron channel被引量：2: 《Chinese Physics B》2021年第5期607-612,共6页Wei-Zhong Chen Yuan-Xi Huang Yao Huang Yi Huang Zheng-Sheng Han; A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significa...; 关键词：LDMOS breakdown voltage(BV) specific on resistance(R_(on sp)) figure of merit(FOM)

Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit: 《Chinese Physics B》2021年第4期605-609,共5页Baoxing Duan Xin Huang Haitao Song Yandong Wang Yintang Yang; Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017);the 111 Project(Grant No.B12026)。; A novel silicon carbide(SiC) on silicon(Si) heterojunction lateral double-diffused metal-oxide semiconductor fieldeffect transistor with p-type buried layer(PBL Si/SiC LDMOS) is proposed in this paper for the first ti...; 关键词：Si/SiC heterojunction LDMOS breakdown voltage specific on-resistance

Novel high- with low specific on-resistance high voltage lateral double-diffused MOSFET被引量：1: 《Chinese Physics B》2017年第2期382-386,共5页Li-Juan Wu Zhong-Jie Zhang Yue Song Hang Yang Li-Min Hu Na Yuan; Project supported by the National Natural Science Foundation of China(Grant No.61306094);the Project of Hunan Provincial Education Department,China(Grant No.13ZA0089);the Introduction of Talents Project of Changsha University of Science&Technology,China(Grant No.1198023);the Construct Program of the Key Discipline in Hunan Province,China; A novel voltage-withstand substrate with high-K（HK, k 〉 3.9, k is the relative permittivity） dielectric and low specific on-resistance（Ron,sp） bulk-silicon, high-voltage LDMOS（HKLR LDMOS）is proposed in this pap...; 关键词：LDMOS high-K dielectric highly doped N＋-layer high voltage specific on-resistance

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology被引量：1: 《Chinese Physics B》2016年第2期436-440,共5页张彦辉魏杰尹超谭桥刘建平李鹏程罗小蓉; Project supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079); A uniform doping ultra-thin silicon-on-insulator（SOI） lateral-double-diffused metal-oxide-semiconductor（LDMOS）with low specific on-resistance（R_on,sp） and high breakdown voltage（BV） is proposed and its mechani...; 关键词：LDMOS accumulation gate back-side etching breakdown voltage specific on-resistance

An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer: 《Chinese Physics B》2015年第4期399-404,共6页李鹏程罗小蓉罗尹春周坤石先龙张彦辉吕孟山; Project supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079);the Program for New Century Excellent Talents at the University of Ministry of Education of China(Grant No.NCET-11-0062); An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and inve...; 关键词：TRENCH U-shaped gate specific on-resistance breakdown voltage

A novel LDMOS with a junction field plate and a partial N-buried layer: 《Chinese Physics B》2014年第12期423-427,共5页石先龙罗小蓉魏杰谭桥刘建平徐青李鹏程田瑞超马达; Project supported by the National Natural Science Foundation of China(Grant No.61376079);the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-11-0062);the Postdoctoral Science Foundation of China(Grant Nos.2012T50771 and XM2012004); A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field...; 关键词：junction field plate partial N-buried layer specific on-resistance breakdown voltage

An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS: 《Chinese Physics B》2014年第12期544-549,共6页胡夏融吕瑞; Project supported by the Scientific Research Fund of Education Department of Sichuan Province,China(Grant No.14ZB0132);the Key Project of Xihua University,China(Grant No.z1323318); In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field（REBULF） lateral double-diffused metal–oxide-semiconductor（LDMOS） transistor is...; 关键词：REBULF LDMOS vertical electric field breakdown voltage

A low specific on-resistance SOI LDMOS with a novel junction field plate被引量：3: 《Chinese Physics B》2014年第7期686-690,共5页罗尹春罗小蓉胡刚毅范远航李鹏程魏杰谭桥张波; supported by the National Natural Science Foundation of China(Grant No.61376079);the Postdoctoral Science Foundation of China(GrantNo.2012T50771);the Postdoctoral Science Foundation of Chongqing City,China(Grant No.XM2012004); A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a ...; 关键词：LDMOS RESURF field plate breakdown voltage specific on-resistance

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer被引量：1: 《Chinese Physics B》2014年第3期625-629,共5页伍伟张波罗小蓉方健李肇基; Project supported by the National Science and Technology Project of the Ministry of Science and Technology of China(Grant No.2010ZX02201);the National Natural Science Foundation of China(Grant No.61176069);the National Defense Pre-Research of China(Grant No.51308020304); A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift...; 关键词：multiple-direction assisted depletion effect breakdown voltage （BV） electric field modulation lateral double-diffusion MOSFET （LDMOS）

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