云南高校图书馆联盟文献共享服务平台- LOW-K

LOW-K: 作品数：44被引量：26H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：付绍晨肖夏李永堂杜诗文王凯更多>>; 相关机构：河南通用智能装备有限公司天津大学北京中电华大电子设计有限责任公司太原科技大学更多>>; 相关期刊：《半导体信息》《电子工业专用设备》《机电工程技术》《Chinese Journal of Traumatology》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划山西省青年科技研究基金中国博士后科学基金更多>>

Comparative Study of Intrachain versus Interchain Cross-linking on the Mechanical,Thermal and Dielectric Properties of Low-k Polyimide: 《Chinese Journal of Polymer Science》2024年第11期1824-1834,I0014,共12页Wan-Jing Zhao Yi-Zhang Tong Pei-Pei Zeng Yang-Sheng Zhou Xian-Wu Cao Wei Wu; financially supported by the National Natural Science Foundation of China(No.52103029)。; Polyimide(PI)is widely used in high-frequency communication technology due to its exceptional comprehensive properties.However,traditional PI has a relatively elevated dielectric constant and dielectric loss.Herein,th...; 关键词：Interchain cross-linking Intrachain cross-linking POLYIMIDE Low dielectric

Low-K芯片的激光开槽工艺质量稳定性控制被引量：1: 《电子产品可靠性与环境试验》2022年第4期17-23,共7页李曼彭川冯晨侯煜宋琦石海燕王秋明张紫辰; 基于低介电常数(Low-K)材料覆盖的晶圆加工需求和激光开槽工艺质量控制特点,开展Low-K材料激光开槽工艺技术质量稳定性研究。以开槽宽度、槽壁夹角、开槽深度和底部波动距离表征槽型形貌特征,定义了激光开槽工艺质量评价准则。针对扫描...; 关键词：工艺质量质量稳定性激光开槽

Association between tourniquet use and intraoperative blood loss during below-knee amputation被引量：1: 《World Journal of Orthopedics》2022年第7期644-651,共8页Alden E Wyland Erik Woelber Liam H Wong Jordan Arakawa Zachary M Working James Meeker; BACKGROUND Despite over 150000 amputations of lower limbs annually,there remains a wide variation in tourniquet practice patterns and no consensus on their necessity,especially among orthopedic patient populations.The...; 关键词：AMPUTATION TOURNIQUET Blood loss HEMOSTASIS

low-k介质的机械可靠性的研究进展: 《电子世界》2021年第11期89-91,共3页王雪松闫江王艳蓉张静魏淑华; 国家自然科学基金资助项目(61874002), 北京市自然科学基金资助项目(4182021), 北方工业大学科研启动基金。; 随着集成电路尺寸的不断微缩,后段制程(back-end-of-line,BEOL)中低介电常数(low-k)材料的选择制备与集成逐渐成为制约超大规模集成电路发展的重要因素之一。将具有低介电常数的多孔材料集成到微电子器件中对图形化和沉积技术提出了许...; 关键词：微电子器件低介电常数超大规模集成电路机械可靠性机械失效沉积技术多孔材料多层结构

晶圆激光开槽工艺研究被引量：2: 《应用激光》2020年第2期276-282,共7页梅志鹏岳永豪田燕牛昊王凯; 国家重点研发计划项目(项目编号:2017YFB0406400);陕西省重点研发计划项目(项目编号:2018ZDXM-GY-109)。; 在半导体的制造过程中,为减少RC延时效应,其中作为绝缘层的low-k材料被广泛引入。由于low-k材料的强度低于二氧化硅,在芯片切割分离过程中,传统的刀具切割会产生分层现象。并且由于使用纯水作为切割水,会使得焊盘表面的金属层发生电化...; 关键词：晶圆划片激光开槽 low-k芯片焊盘腐蚀

A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors被引量：9: 《Chinese Journal of Polymer Science》2020年第3期213-219,I0005,共8页Chao Qian Zhen-Guo Fan Wei-Wen Zheng Run-Xin Bei Tian-Wen Zhu Si-Wei Liu Zhen-Guo Chi Matthew P.Aldred Xu-Dong Chen Yi Zhang Jia-Rui Xu; finincially supported by the National Natural Science Foundation of China (Nos. 51373204 and 51873239);the National 973 Program of China (No. 2014CB643605);the Science and Technology Project of Guangdong Province (Nos. 2015B090915003 and 2015B090913003);the Leading Scientific, Technical and Innovation Talents of Guangdong Special Support Program (No. 2016TX03C295);the China Postdoctoral Science Foundation (No. 2017M612801);the Fundamental Research Funds of Sun Yat-sen University; High-performance low-k and low-loss circuit materials are urgently needed in the field of microelectronics due to the upcoming FifthGeneration Mobile Communications Technology(5 G Technology).Herein,a facile design st...; 关键词：Polyimides LOW-K Free volume Secondary relaxation

Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation被引量：1: 《Frontiers of Chemical Science and Engineering》2019年第3期511-516,共6页Romain Chanson Remi Dussart Thomas Tillocher P. Lefaucheux Christian Dussarrat Jean Francois de M arneffe; The integration of porous organo-silicate low-k materials has met a lot of technical challenges.One of the main issues is plasma-induced damage,occurring for all plasma steps involved during interconnects processing.I...; 关键词：low-A NANOTECHNOLOGY micro-electronics cryo-etching PLASMA processing

用于集成电路铜互连工艺的Low-K材料研究被引量：1: 《电子世界》2019年第4期206-208,共3页余家庆刘春晖董莹莹唐溪琴熊韵魏淑华; 北京市大学生科学研究与创业行动计划项目资助; 随着集成电路的快速发展,集成电路互连成为限制芯片性能的主要因素,而降低介质层的介电常数是解决互连问题的重要途径。本文综述了用于集成电路铜互连工艺的低介电(Low-K)材料的制备方法及Low-K候选材料。等离子体增强化学气相沉积和旋...; 关键词：铜互连 LOW-K 低介电常数 PECVD

Many-body correlations in shell model effective interactions derived by ab initio methods and the V_(low-k) approach: 《Chinese Physics C》2018年第11期78-84,共7页Xiao-Bao Wang Guo-Xiang Dong Hua-Lei Wang Cen-Xi Yuan Yong-Jing Chen Ya Tu; Supported by National Natural Science Foundation of China(11505056,U1732138,11605054,11790325,11305108,11575290,11675148,11747312,11775316);the Outstanding Young Talent Research Fund of Zhengzhou University(1521317002); We investigate many-body correlations caused by two- and three-body （2-, 3bd） forces. Shell-model effective interactions derived from ab initio methods （coupled-cluster method, no-core shell model） are adopted. Vl...; 关键词：shell model effective interactions tensor force three-body force

论low-k技术用处与展望: 《科学与信息化》2018年第21期37-38,共2页高源张欣琪; 随着集成电路技术的不断发展,在半导体工业中,我们已经进入了亚微米时代。特征尺寸不断减小和金属连线高宽比增加导致互连电容快速上升引起串扰问题;层数增加引起的层间寄生电容的加大并产生额外的互连延时,成为提高电路速度的主要障碍...; 关键词：集成电路 LOW-K 互连延时

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