国家自然科学基金(60476021)

作品数：8被引量：4H指数：2
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相关作者：杨辉张书明朱建军刘宗顺赵德刚更多>>
相关机构：中国科学院更多>>
相关期刊：《Chinese Physics B》《物理学报》《Journal of Semiconductors》更多>>
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相关领域：电子电信理学电气工程更多>>
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高阻氮化镓外延层的异常光吸收
《物理学报》2010年第11期8048-8051,共4页刘文宝 赵德刚 江德生 刘宗顺 朱建军 张书明 杨辉 
国家自然科学基金(批准号:60776047,60506001,60476021,60576003,60836003)资助的课题~~
通过光伏谱(PV)的测量发现,采用MOCVD方法生长的非故意掺杂GaN外延膜,电阻较大的样品在带隙内有明显的异常光吸收.吸收峰的能量位置表明这种异常吸收可能与激子有关.在这些高阻样品上制作的MSM型探测器,当入射光照射不同位置,其光谱响...
关键词：GAN 激子 光伏谱 光谱响应 
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si(111) substrate with AlGaN interlayer被引量：2
《Chinese Physics B》2010年第3期407-411,共5页吴玉新 朱建军 陈贵锋 张书明 江德生 刘宗顺 赵德刚 王辉 王玉田 杨辉 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60476021,60576003,60776047and 60836003);the National Basic Research Program of China (Grant No. 2007CB936700);the Project of Technological Research and Development of Hebei Province,China (Grant No. 07215134)
We present the growth of CaN epilayer on Si （111） substrate with a single A1GaN interlayer sandwiched between the GaN epilayer and A1N buffer layer by using the metalorganic chemical vapour deposition. The influence...
关键词：GAN Si （111） substrate metalorganic chemical vapour deposition AIN bufferlayer AlGaN interlayer 
Structural and optical properties of Al_(1-x)In_xN epilayers on GaN template grown by metalorganic chemical vapor deposition
《Chinese Physics B》2010年第2期411-417,共7页卢国军 朱建军 江德生 王玉田 赵德刚 刘宗顺 张书明 杨辉 
supported by the National Natural Science Foundation of China (Grant Nos. 60776047, 60506001, 60476021, 60576003 and 60836003)
This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%--20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers hav...
关键词：metalorganic chemical vapor deposition Al1-xInxN gradual variation in composition optical reflectance spectra 
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
《Chinese Physics B》2010年第1期501-504,共4页王良吉 张书明 朱继红 朱建军 赵德刚 刘宗顺 江德生 王玉田 杨辉 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60776047, 60836003, 60476021 and 60576003)
To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au （5 nm/5 nm） film deposition. The surface morphology o...
关键词：GAN light emitting diode surface treatment leakage current 
GaN-based violet laser diodes grown on free-standing GaN substrate
《Chinese Physics B》2009年第12期5350-5353,共4页张立群 张书明 江德生 王辉 朱建军 赵德刚 刘宗顺 杨辉 
Project supported by the National Natural Science Foundation of China (Grant Nos 60506001,60776047,60476021,60576003 and 60836003);the National Basic Research Programme of China (Grant No 2007CB936700)
A violet laser diode （LD） structure is grown on a free-standing c-plane GaN substrate and 4 μm×800μm ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet...
关键词：GaN laser diode mounting configuration active region temperature 
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates被引量：2
《Chinese Physics B》2009年第10期4413-4417,共5页吴玉新 朱建军 赵德刚 刘宗顺 江德生 张书明 王玉田 王辉 陈贵锋 杨辉 
Project supported by the National Natural Science Foundation of China (Grant Nos 60506001, 60476021, 60576003, 60776047 and 60836003);the National Basic Research Program of China (Grant No 2007CB936700);Project of Technological Research and Development of Hebei Province (Grant No 07215134)
High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single A1GaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si （111） substrate by metalorganic chemical va...
关键词：GAN Si （111） substrate metalorganic chemical vapor deposition AlGaN interlayer 
Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD
《Journal of Semiconductors》2008年第7期1242-1245,共4页马志芳 王玉田 江德生 赵德刚 张书明 朱建军 刘宗顺 孙宝娟 段瑞飞 杨辉 梁骏吾 
国家自然科学基金(批准号:60506001,60476021,60576003);国家重点基础研究发展规划(批准号:2007CB936700)资助项目~~
High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a （0001） oriented GaN epitaxial film grown on sapphire substrate. The analysis reveals that defect clusters are present in...
关键词：X-ray diffuse scattering GAN defect cluster 
Optical and Electrical Properties of GaN:Mg Grown by MOCVD
《Journal of Semiconductors》2008年第1期29-32,共4页王莉莉 张书明 杨辉 梁骏吾 
国家自然科学基金资助项目(批准号:60506001,60576003,60476021)~~
Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature （RT） Hall and photoluminescence （PL） spectroscopy measurements were perf...
关键词：Hall effect PHOTOLUMINESCENCE P-GAN 
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