云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(50472068)

国家自然科学基金(50472068): 作品数：16被引量：35H指数：4; 导出分析报告; 相关作者：胡小波徐现刚李娟蒋民华陈秀芳更多>>; 相关机构：山东大学更多>>; 相关期刊：《Journal of Rare Earths》《Chinese Optics Letters》《Chinese Journal of Structural Chemistry》《人工晶体学报》更多>>; 相关主题：6H-SICCMP单晶生长SICROUGHNESS更多>>; 相关领域：理学电子电信金属学及工艺更多>>

Etching Effect on CMP of Different GaN Layers: 《稀有金属材料与工程》2011年第S3期276-280,共5页Siche Dietmar Rost Hans-Joachim Schulz Tobias Albrecht Martin; National Natural Science Foundation of China (50472068, 50721002);National "863" High Technology Research and Development Program of China (2006AA03A145, 2007AA03Z405);National Basic Research Program of China (2009CB930503);The Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (707039); Chemical mechanical polishing (CMP) was used to etch various GaN materials, such as GaN layers on sapphire and silicon carbide substrates grown by metal-organic chemical vapor deposition and thick GaN layers grown by ...; 关键词：SURFACE ETCH PITS CMP GAN

Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode被引量：2: 《Chinese Optics Letters》2010年第5期493-495,共3页李沛旭蒋锴李树强夏伟张新汤庆敏任忠祥徐现刚; supported by the National Natural Science Foundation of China(No.50472068);the Program for New Century Excellent Talents in University.; Asymmetric broad-waveguide separate-confinement heterostructure（BW-SCH） quantum well（QW） laser diode emitting at 808 nm is analyzed and designed theoretically.The dependence of the optical field distribution, vert...; 关键词：Semiconductor quantum wells WAVEGUIDES

MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications被引量：2: 《Chinese Optics Letters》2009年第6期489-491,共3页李沛旭王翎李树强夏伟张新汤庆敏任忠祥徐现刚; supported by the National Natural Science Foundation of China (No.50472068);the Program for New Century Excellent Talents in University; In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by met...; 关键词：MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications well high

透射电子显微术和高分辨X射线衍射技术研究AlN单晶生长习性被引量：5: 《人工晶体学报》2008年第5期1117-1120,共4页李娟胡小波高玉强王翎徐现刚; 国家自然科学基金(No.50472068);教育部"新世纪优秀人才支持计划"资助项目;国家留学基金委;山东省自然科学基金资助; 采用透射电子显微术和高分辨X射线衍射技术对氮化硼坩埚中自发成核的AlN单晶生长习性进行了研究。结果表明,在低温下,AlN单晶显露面为(0001)面,随着温度的升高,AlN单晶显露面转化为(112-0)面。沟槽结构是高温下得到的AlN单晶共有的显著...; 关键词：透射电子显微术高分辨X射线衍射仪 AlN单晶

Optical Absorption Measurements on Nitrogen-doped 6H-SiC Single Crystals被引量：1: 《Chinese Journal of Structural Chemistry》2007年第10期1171-1174,共4页姜守振陈秀芳徐现刚胡小波宁丽娜王英民李娟蒋民华; the National Natural Science Foundation of China (No. 50472068);Natural Science Foundation of Shandong Province,(No. Y2006F15);Shandong Provincial Significant Science and Technology Attack Project (No. 2005GG2107001);Shandong Provincial Independent Innovation Significant Science and Technology Special Plan (No. 2006GG1103046); 6H-SiC bulk crystals have been prepared by sublimation method in an inductively heated growth reactor. The effect of nitrogen doping on absorption for 6H-SiC was investigated. The absorption measurement based on optic...; 关键词：6H-SIC SUBSTRATE nitrogen doping absorption measurement

Comparison of Different Crucible Materials for the Growth of AlN Crystals: 《Chinese Journal of Structural Chemistry》2007年第10期1203-1207,共5页李娟胡小波王英民宁丽娜姜守振陈秀芳徐现刚王继扬蒋民华; the National Natural Science Foundation of China (No. 50472068);the Program for New Century Excellent Talents in University; Choice of crucible material is a key issue during the growth of AIN crystal. The stabilities at high temperature and life-spans of boron nitride （BN） crucible, tantalum （Ta） crucible and tungsten （W） crucible we...; 关键词：aluminum nitride CRUCIBLE SUBLIMATION

6H-SiC衬底片的表面处理(英文)被引量：5: 《人工晶体学报》2007年第5期962-966,共5页陈秀芳徐现刚胡小波杨光宁丽娜王英民李娟姜守振蒋民华; This work supported by the National Natural Science Foundation of China (No.50472068);Programfor New Century Excellent Talents in University; 相比于蓝宝石,6H-SiC是制作GaN高功率器件更有前途的衬底。本文研究了表面处理如研磨、化学机械抛光对6H-SiC衬底表面特性的影响。用显微镜、原子力显微镜、拉曼光谱、卢瑟福背散射谱表征了衬底表面。结果表明经过两步化学机械抛光后提...; 关键词：6H-SIC 衬底表面处理研磨化学机械抛光

3英寸6H-SiC单晶的生长被引量：1: 《人工晶体学报》2007年第3期717-718,共2页王英民宁丽娜陈秀芳彭燕高玉强胡小波徐现刚蒋民华; 国家863计划(2006AA03A145);国家自然科学基金(No.50472068);山东省重大科技专项计划(2006GG1103046)支持项目; 关键词：6H-SiC单晶单晶生长宽带隙半导体材料蓝色发光二极管大功率电子器件 Cree公司电学性质衬底材料

Surface Polishing of 6H-SiC Substrates被引量：5: 《Journal of Materials Science & Technology》2007年第3期430-432,共3页Xiufang CHEN Xiangang XU Juan LI Shouzhen JIANG Lina NING Yingmin WANG Deying MA Xiaobo HU Minhua JIANG; supported by the National Natural Science Foundation of China(Grant No.60025409 and No.50472068);supported by the National High-Tech Research and Development Program of China(863 Program,Grant No.2001AA311080).; The surface polishing for silicon carbide （SIC） substrates was investigated and results were presented for mechanical polishing （MP） and chemo-mechanical polishing （CMP）. High quality surfaces were obtained afte...; 关键词：SIC Chemo-mechanical polishing （CMP） ROUGHNESS Subsurface damage

Relaxation of residual stresses in SiC wafers by annealing被引量：1: 《Rare Metals》2006年第6期704-708,共5页CHEN Xiufang XU Xiangang HU Xiaobo LI Juan WANG Yingmin JIANG Shouzhen ZHANG Kai; This work was financially supported by the National Natural Science Foundation of China (Nos. 60025409 and 50472068) and by the National "863" High Technology Plan (No. 2001AA311080).; Residual stresses in SiC wafers, which were introduced during production processes including sawing, lapping, mechanical polishing （MP）, and chemical-mechanical polishing （CMP）, were evaluated in terms of changes ...; 关键词：SIC ANNEALING residual stress mechanical polishing chemical-mechanical polishing

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