云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2011CBA00602)

国家重点基础研究发展计划(2011CBA00602): 作品数：16被引量：13H指数：2; 导出分析报告; 相关作者：李健平钱正洪白茹孙宇澄朱华辰更多>>; 相关机构：杭州电子科技大学四川大学清华大学都灵理工大学更多>>; 相关期刊：《Journal of Semiconductors》《电路与系统学报》《Science China(Technological Sciences)》《微电子学》更多>>; 相关主题：自旋阀FLASH_MEMORYTIDGASBP-CHANNEL更多>>; 相关领域：电子电信自动化与计算机技术化学工程理学更多>>

Mobility enhancement of strained GaSb p-channel metal-oxide-semiconductor field-effect transistors with biaxial compressive strain被引量：2: 《Chinese Physics B》2016年第3期448-452,共5页陈燕文谭桢赵连锋王敬刘易周司晨袁方段文晖许军; Project supported by the National Basic Research Program of China(Grant No.2011CBA00602);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-002); Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） are experimentally and theoretically investigated, The biaxial compressive strained GaSb MOSFETs show ...; 关键词：GASB metal-oxide-semiconductor field-effect transistor STRAIN first principles calculations

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics: 《Chinese Physics B》2015年第1期524-527,共4页赵连锋谭桢王敬许军; Project supported by the National Basic Research Program of China(Grant No.2011CBA00602);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-002); GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperat...; 关键词：GASB metal-oxide-semiconductor field-effect transistor temperature dependent characteristics drain leakage current

Operation methods of resistive random access memory被引量：1: 《Science China(Technological Sciences)》2014年第12期2295-2304,共10页WANG Guo Ming LONG Shi Bing ZHANG Mei Yun LI Yang XU Xiao Xin LIU Hong Tao WANG Ming SUN Peng Xiao SUN Hai Tao LIU Qi Lü Hang Bing YANG Bao He LIU Ming; supported by the National Natural Science Foundation of China(Grant Nos.61322408,61221004,61422407,61334007,61474136,61274091,61376112,61306117,61106119,and 61106082);National Basic Research Program of China(Grant No.2011CBA00602);National High Technology Research and Development Program of China(Grant Nos.2014AA032900,2013AA030801,2011AA010401 and 2011AA-010402); In this paper, different electrical measurement and operation methods of resistive random access memory （RRAM） have been summarized, including voltage sweeping mode （VSM）, current sweeping mode （CSM）, co lstant ...; 关键词：resistive random access memory operation method voltage sweeping mode current sweeping mode constant currentstress constant voltage stress rectangular pulse mode triangle pulse mode

An overview of the switching parameter variation of RRAM被引量：1: 《Chinese Science Bulletin》2014年第36期5324-5337,共14页Meiyun Zhang Shibing Long Guoming Wang Yang Li Xiaoxin Xu Hongtao Liu Ruoyu Liu Ming Wang Congfei Li Pengxiao Sun Haitao Sun Qi Liu Hangbing L Ming Liu; supported by the National Natural Science Foundation of China(61322408,61221004,61334007,61274091,61106119 and 61106082);National Basic Research Program of China(2010CB934200 and 2011CBA00602);National High Technology Research and Development Program of China(2011AA010401 and 2011AA010402); Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast op...; 关键词：切换参数变化非易失性存储器随机存取存储器统计分析模型操作速度统计方法渗流模型

Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology被引量：3: 《Science China(Information Sciences)》2014年第6期169-177,共9页QIAO FengYing PAN LiYang YU Xiao MA HaoZhi WU Dong XU Jun; supported by National Basic Research Program of China(Grant No.2011CBA00602);National Natural Science Foundation of China(Grant Nos.61106102,61176033); In this paper,we have studied the total ionizing dose（TID）radiation response up to 2 Mrad（Si）of silicon-oxide-nitride-oxide-silicon（SONOS）memory cells and memory circuits,fabricated in a 130 nm complimentary met...; 关键词：silicon-oxide-nitride-oxide-silicon SONOS total ionizing dose TID flash memory radiation effects 130 nm

沟道形状对无结型多栅器件性能影响探究: 《微电子学》2014年第3期380-383,共4页胡梦月梁仁荣王敬许军; 国家重点基础研究发展规划项目(2011CBA00602);国家科技重大专项(2009ZX02035-004-01;2011ZX02708-002); 随着集成电路特征尺寸进入纳米尺度,摩尔定律的延续受到一定的挑战,纳米技术代的晶体管亟需全新的材料、器件结构和工艺集成技术。在器件结构方面,无结型场效应晶体管由于其近似理想的电流电压特性、优良的等比例缩小能力以及极其简单...; 关键词：无结型晶体管沟道形状短沟道效应

具有SAF结构的IrMn基自旋阀材料的磁场退火研究被引量：1: 《无机材料学报》2014年第4期411-416,共6页李健平钱正洪孙宇澄白茹刘建林朱建国; 科技部973子课题(2011CBA00602);浙江省重大科技专项(2011C11047);浙江省教育厅"磁电子材料和器件"创新团队(2009[171])~~; 用磁控溅射法制备了被钉扎层为反铁磁(SAF)结构(CoFe/Ru/CoFe)的IrMn基顶钉扎自旋阀材料,分别采用HRTEM、AFM、XPS对材料的结构和成分进行表征。首先,制备的自旋阀材料分别在200℃、245℃、255℃、265℃的真空条件(<10-5 Pa)下退火4 h,...; 关键词：SAF 自旋阀磁场退火

A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory: 《Journal of Semiconductors》2014年第2期36-41,共6页谯凤英潘立阳伍冬刘利芳许军; Project supported by the National Key Basic Research Program(No.2011CBA00602);the National Natural Science Foundation of China(Nos.61106102,61176033); In order to minimize leakage current increase under total ionizing dose （TID） radiation in high density memory circuits, a new isolation technique, combining deep trench isolation （DTI） between the wells, local ox...; 关键词：total ionizing dose isolation leakage flash memory silicon on insulator

基于自旋阀材料的可编程灵敏度磁敏传感器被引量：4: 《材料保护》2013年第S2期164-166,共3页朱华辰钱正洪胡亮李健平白茹; 科技部973子课题(No.2011CBA00602);浙江省重大科技专项(No.2011C1147);浙江省教育厅"磁电子材料和器材"创新团队(No.2009[171]);浙江省科技创新团队(No.2010R50010); 基于自旋阀材料的磁敏传感器,以其小尺寸、高灵敏度、低功耗的优势,在工业控制、汽车电子等领域中应用日益广泛。然而,单一灵敏度的传感器在实际应用中受到诸多限制。本文提出了一种基于自旋阀材料的可编程灵敏度磁敏传感器,不仅对各类...; 关键词：巨磁电阻自旋阀可编程灵敏度仪表放大器

用退火法重置自旋阀材料钉扎方向的研究: 《材料保护》2013年第S2期83-85,共3页李健平钱正洪白茹孙宇澄; 科技部973子课题(No.2011CBA00602);浙江省重大科技专项(No.2011C11047);浙江省教育厅"磁电子材料和器件"创新团队(No.2009[171]);浙江省科技厅创新团队(No.2010R50010)资助; 用磁控溅射法制备了被钉扎层为CoFe/Ru/CoFe的IrMn基底钉扎自旋阀材料,制备过程中自由层与被钉扎层的生长磁保持不变,制备的自旋阀材料的巨磁电阻率为9.30%。在245℃的真空(<10-5Pa)环境下,对在相同条件下制备的自旋阀材料样品在恒定外...; 关键词：CoFe/Ru/CoFe 自旋阀退火

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