the National Natural Science Foundation of China (Grant No. 60277008);the Research Foundation from Ministry of Education of China (Grant No. 03147);the Science and Technology Foundation of State Key Laboratory (Grant No. 514910501005DZ0201);the Science and Technology Bureau of Sichuan Prov-ince (Grant No. 04GG021-020-01)
This paper proposes a new infrared method to measure the start duration of GaAs substrate in chemi- cal etching. When etching starts, the temperature of liquid-film will change because of heat release in the chemical ...
A high gain cascade connected preamplifier for optical receivers is developed with 0.5μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3dB ban...