云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(50932001)

国家自然科学基金(50932001): 作品数：18被引量：17H指数：2; 导出分析报告; 相关作者：杜军张心强赵鸿滨杨志民杨萌萌更多>>; 相关机构：北京有色金属研究总院表面物理与化学重点实验室更多>>; 相关期刊：《稀有金属》《Journal of Semiconductors》《Journal of Materials Science & Technology》《Journal of Rare Earths》更多>>; 相关主题：HFOGDHFO2HIGH-KSHIFT更多>>; 相关领域：电子电信理学一般工业技术金属学及工艺更多>>

Resistive Switching Properties and Failure Behaviors of(Pt, Cu)/Amorphous ZrO_(2)/Pt Sandwich Structures: 《Journal of Materials Science & Technology》2016年第7期676-680,共5页Haifa Zhai Jizhou Kong Jien Yang Jing Xu Qingran Xu Hongchen Sun Aidong Li Di Wu; supported by the National Natural Science Foundation of China(Nos.51202107 and 50932001);the Opening Funding of National Laboratory of Solid State Microstructure(No.M26017);the Doctoral Scientific Research Foundation of Henan Normal University(No.5101029170260);the support of PAPD in Jiangsu Province and Doctoral Fund of Ministry of Education of the People’s Republic of China(No.20120091110049); The effect of Pt and Cu electrodes on the resistive switching properties and failure behaviors of amor- phous ZrO2 films were investigated. Compared with Cu/ZrO2/Pt structures, the Pt/ZrO2/Pt structures exhibit better...; 关键词：ZRO2 Thin films Sol-gel method FAILURE

Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure: 《Journal of Semiconductors》2015年第9期71-74,共4页韩锴王晓磊王文武; Project supported by the National Natural Science Foundation of China(Nos.61404093,50932001);the Doctoral Scientific Research Foundation of Weifang University(No.014BS02); The physical origin of the flatband voltage （VFB） roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface be...; 关键词：high-k dielectric band alignment VFB roll off

Analysis of flatband voltage shift of metal/high-k/SiO_2/Si stack based on energy band alignment of entire gate stack: 《Chinese Physics B》2014年第11期536-540,共5页韩锴王晓磊徐永贵杨红王文武; supported by the National Natural Science of China(Grant Nos.61176091 and 50932001); A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/...; 关键词：metal gate high-k dielectric band alignment Vfb shift

Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO_2 dielectric and a TiN metal gate被引量：1: 《Journal of Semiconductors》2013年第11期53-56,共4页韩锴马雪丽项金娟杨红王文武; supported by the Important National Science&Technology Specific Projects,China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001); Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a m...; 关键词：ALD HfO2 TIN low temperature annealing HYSTERESIS

Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO_2 dielectric被引量：1: 《Chinese Physics B》2013年第11期585-588,共4页韩锴王晓磊杨红王文武; Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2009ZX02035);the National Natural Science of China(Grant Nos.61176091 and 50932001); Gd-doped HfO2 has drawn worldwide interest for its interesting features. It is considered to be a suitable material for N-type metal-oxide-semiconductor （MOS） devices due to a negative flatband voltage （Vfb） shift...; 关键词：high-k dielectric HfGdOx interface dipole flatband voltage shift

Epitaxial growth and characterization of Gd_2O_3-doped HfO_2 film on Ge(001) substrates with zero interface layer: 《Journal of Rare Earths》2013年第11期1092-1095,共4页张心强屠海令魏峰熊玉华杨萌萌赵洪滨杜军王文武; supported by National Natural Science Foundation of China(50932001);National Science and Technology Major Projects(2009ZX02039-005,51102020,51202013); The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffracti...; 关键词：dielectric material epitaxial growth interface Gd203 HFO2 rare earths

Modulation of the effective work function of TiN metal gate for PMOS application: 《Journal of Semiconductors》2013年第8期193-196,共4页韩锴马雪丽杨红王文武; supported by the Important National Science & Technology Specific Projects,China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001); It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si,which can meet the lower threshold voltage requirement of p-type metal-oxide-semiconductor（MOS） trans...; 关键词：work function modulation PMOS positive shift

Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack: 《Journal of Semiconductors》2013年第7期167-169,共3页马雪丽韩锴王文武; Project supported by the Important National Science & Technology Specific Projects,China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001); High permittivity materials have been required to replace traditional SiO_2 as the gate dielectric to extend Moore＇s law.However,growth of a thin SiO_2-like interfacial layer（IL） is almost unavoidable during the de...; 关键词：scavenging technology： EOT barrier layer TEM XPS

Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation: 《Journal of Semiconductors》2013年第7期175-178,共4页韩锴马雪丽杨红王文武; Project supported by the Important National Science & Technology Specific Projects of China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001); The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically investigated.Metal-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill thi...; 关键词：work function modulation AL MOS capacitor PMA

Effects of NH_3 annealing on interface and electrical properties of Gd-doped HfO_2/Si stack被引量：1: 《Journal of Rare Earths》2013年第4期395-399,共5页杨萌萌屠海令杜军魏峰熊玉华赵鸿斌; supported by National Natural Science Foundation of China (50932001);National Natural Science Foundation of China (51102020,51202013);National Science and Technology Major Project(2009ZX02039-005); Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallizatio...; 关键词：Gd-doped HfO2 HIGH-K NH3 annealing INTERFACE electrical properties rare earths

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