supported by National High-Tech Research&Development Program of China(Grant No.2011AA-010205);National Natural Science Foundation of China(Grant Nos.61131006,60721004);Major National Development Project of Scientific Instrument and Equipment(Grant No.2011YQ150021);Important National Science and Technology Specific Projects(Grant No.2011ZX02707);major project(Grant No.YYYJ-1123);Hundred Talent Program of the Chinese Academy of Sciences;Shanghai Municipal Commission of Science and Technology(Grant No.10JC1417000)
The terahertz (THz) quantum cascade laser (QCL) is a coherent THz source based on intersubband transitions of unipolar carriers. As semiconductor lasers, THz QCLs are solid-state, electrically pumped, tunable, and...
Project supported by the State Key Development Program for Basic Research of China(No.2006CB300403);the National Hi-Tech Research and Development Program of China(No.2007AA03Z308);the Fund for Creative Research of the National Natural Science Foundation of China(No.60721004)
Nanoscale refinement on a (100) oriented silicon-on-insulator (SOI) wafer was introduced by using tetra-methyl-ammonium hydroxide (TMAH, 25 wt%) anisotropic silicon etchant, with temperature kept at 50 ℃ to ach...
supported by the National Science and Technology Major Projects of China (2009ZX02040);the National Basic Research Program of China (2010CB832906);the National Natural Science Foundation of China (60721004 and 61006088);Shanghai Foundation for Development of Science and Technology (08520740100);the Natural Science Foundation of Shanghai (10ZR1436100)
In this paper,we investigated the dose window of forming a continuous buried oxide(BOX) layer by single implantation at the implantation energy of 200 keV. Then,an improved two-step implantation process with second im...
the support from the Alexander von Humboldt Foundation;supported by the National Basic Research Program of China(Grant No.2007CB310402);the 863 program of China;the National Natural Science Foundation of China(Grant No.60721004);the major projects(Project Nos.KGCX1-YW-24 and KGCX2-YW-231);the Hundred Talent Program of the Chinese Academy of Sciences;the Shanghai Municipal Commission of Science and Technology(Project No.10JC1417000)
supported by the National Basic Research Program of China (Grant No. 2007CB310402);the National Natural Science Foundation of China (Grant No. 60721004);the Major Projects of the Chinese Academy of Sciences (Grant Nos. KGCX1-YW-24 and KGCX2-YW-231);the Hundred Talent Program of the Chinese Academy of Sciences;the Funds of the Shanghai Municipal Commission of Science and Technology (Grant No. 10JC1417000)
When a single layer graphene is epitaxially grown on silicon carbide, it will exhibit a finite energy gap like a conventional semiconductor, and its energy dispersion is no longer linear in momentum in the low energy ...
supported by the National Basic Research Program of China(No.2007CB310402);the National Natural Science Foundation of China(No.60721004);the Major Projects(Nos.KGCX1-YW-24,KGCX2-YW-231);the Hundred Scholar Plan of the Chinese Academy of Sciences
We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes,using a model in wh...