国家自然科学基金(60976013)

作品数：8被引量：9H指数：2
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相关作者：周卫刘志弘张伟孙亚宾崔杰更多>>
相关机构：清华大学更多>>
相关期刊：《Journal of Semiconductors》《微电子学》《Chinese Physics B》《物理学报》更多>>
相关主题：INDUCEDSIGEHFOHIGH-K辐照效应更多>>
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation被引量：2
《Chinese Physics B》2014年第11期431-437,共7页孙亚宾 付军 许军 王玉东 周卫 张伟 崔杰 李高庆 刘志弘 
supported by the National Natural Science Foundation of China(Grant No.60976013)
The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively....
关键词：heavy ion irradiation displacement damage SiGe heterojunction bipolar transistor 
Nanoscale triple-gate FinFET design considerations based on an analytical model of short-channel effects被引量：1
《Science China(Information Sciences)》2014年第4期224-230,共7页XIE Qian LIANG RenRong WANG Jing LIU LiBin XU Jun 
supported in part by State Key Development Program for Basic Research of China(Grant No.2011CBA00602);National Natural Science Foundation of China(Grant Nos.60876076,60976013)
In this paper, a three-dimensional （3-D） analytical model for short-channel effects （SCEs） in a nanoscale triple-gate （TG） FinFET is derived based on solving a boundary value problem using the 3-D Poisson＇s equ...
关键词：triple-gate FinFET short-channel effects （SCEs） scale length design considerations modeling 
不同剂量率下锗硅异质结双极晶体管电离损伤效应研究被引量：6
《物理学报》2013年第19期375-381,共7页孙亚宾 付军 许军 王玉东 周卫 张伟 崔杰 李高庆 刘志弘 
国家自然科学基金(批准号:60976013)资助的课题~~
对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT),在不同辐照剂量率下进行60Coγ射线的辐照效应与退火特性的研究.测量结果表明,两种辐照剂量率下,随着辐照总剂量增加,晶体管基极电流增大,共发射极电流放大倍数降低,且器件的辐照...
关键词：锗硅异质结双极晶体管 低剂量率辐照损伤增强 辐照效应 
Effect of Er ion implantation on the physical and electrical properties of TiN/HfO_2 gate stacks on Si substrate被引量：1
《Science China(Physics,Mechanics & Astronomy)》2013年第7期1384-1388,共5页ZHAO Mei LIANG RenRong WANG Jing XU Jun 
supported by the State Key Development Program for Basic Research of China(Grant No. 2011CBA00602);the National Natural Science Foundation of China(Grant Nos. 60876076 and 60976013)
In this paper, we report the fabrication, electrical and physical characteristics of TiN/HfO2/Si MOS capacitors with erbium （Er） ion implantation. It is demonstrated that the fiat band voltage can be reduced by 0.4 ...
关键词：erbium ion implantation high-k/metal-gate equivalent oxide thickness fiat band voltage interfacial layer CRYSTALLIZATION 
Effective interface passivation of a Ge/HfO_2 gate stack using ozone pre-gate treatment and ozone ambient annealing
《Journal of Semiconductors》2013年第6期181-184,共4页赵梅 梁仁荣 王敬 许军 
supported by the State Key Development Program for Basic Research of China(No.2011CBA00602);the National Natural Science Foundation of China(Nos.60876076,60976013)
The physical and electrical properties of a Ge/GeO2/HfO2/Al gate stack are investigated.A thin interfacial GeO2 layer（- 1 nm） is formed between Ge and HfO2 by dual ozone treatments,which passivates the Ge/high-k int...
关键词：GERMANIUM surface passivation ozone treatment interface trap density gate leakage current density 
A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor被引量：1
《Chinese Physics B》2013年第5期49-54,共6页孙亚宾 付军 许军 王玉东 周卫 张伟 崔杰 李高庆 刘志弘 余永涛 马英起 封国强 韩建伟 
Project supported by the National Natural Science Foundation of China (Grant No. 60976013)
A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector lo...
关键词：single event transient （SET） pulsed laser charge collection SiGe heterojunction bipolar transistor（HBT） 
A PNPN tunnel field-effect transistor with high-k gate and Iow-k fringe dielectrics
《Journal of Semiconductors》2012年第8期54-59,共6页崔宁 梁仁荣 王敬 周卫 许军 
Project supported by the State Key Development Program for Basic Research of China(No.2011CBA00602);the National Natural Science Foundation of China(Nos.60876076,60976013,60820106001)
A PNPN tunnel field effect transistor（TFET） with a high-k gate dielectric and a low-k fringe dielectric is introduced.The effects of the gate and fringe electric fields on the TFET＇s performance were investigated t...
关键词：TFET subthreshold swing high-k dielectric low-k dielectric fringe electric field 
IC制造作业调度及资源配置机制研究
《微电子学》2010年第6期893-898,共6页胡尊刚 严利人 周卫 刘志弘 
国家自然科学基金资助项目(60976013)
考察和分析了当前流行的IC作业调度的算法模式。在此基础上,将制造系统中的作业调度回归到本原意义上,即制造资源优化配置必须保证制造步骤得以实施,得出既处理待加工硅片,也处理加工设备的双资源调度路线。结合判决式实例(Benchmark),...
关键词：IC制造 作业调度 资源配置 
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