云南高校图书馆联盟文献共享服务平台- METAL-OXIDE-SEMICONDUCTOR

METAL-OXIDE-SEMICONDUCTOR: 作品数：60被引量：53H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：杨霏陶永洪汪玲刘奥陈弘达更多>>; 相关机构：国网智能电网研究院南京电子器件研究所中国科学院全球能源互联网研究院更多>>; 相关期刊：《Journal of Rare Earths》《系统仿真技术》《Chinese Physics B》《Chinese Physics Letters》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家电网公司科技项目中国博士后科学基金更多>>

Dynamic electrostatic-discharge path investigation relied on different impact energies in metal-oxide-semiconductor circuits: 《Chinese Physics B》2023年第4期701-706,共6页谢田田王俊杜飞波郁扬蔡燕飞冯二媛侯飞刘志伟; Project supported by the National Natural Science Foundation of China(Grant No.61974017)。; Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,eas...; 关键词：electrostatic discharge trigger voltage latch up d V/dt effect

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor: 《Chinese Physics B》2020年第9期423-428,共6页He Guan Cheng-Yu Jiang Shao-Xi Wang; HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performa...; 关键词：HfAlO/InAlAs MOS-capacitor annealing temperature interface leakage current

Effect of depositing PCBM on perovskite-based metal–oxide–semiconductor field effect transistors被引量：1: 《Chinese Physics B》2018年第4期391-395,共5页Su-Zhen Luan Yu-Cheng Wang Yin-Tao Liu Ren-Xu Jia; Project supported by the National Natural Science Foundation of China(Grant No.51602241);the China Postdoctoral Science Foundation(Grant No.2016M592754); In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors（MOSFETs） with phenylC61-butyric acid methylester（PCBM） layers are studied.The MOSFETs are fabricated on perovskites,and ...; 关键词：metal-oxide-semiconductor field effect transistors photoelectric characteristics PEROVSKITE

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO被引量：1: 《Chinese Physics B》2017年第10期404-410,共7页申占伟张峰 Sima Dimitrijev 韩吉胜闫果果温正欣赵万顺王雷刘兴昉孙国胜曾一平; supported by the National Basic Research Program of China(Grant No.2015CB759600);the National Natural Science Foundation of China(Grant Nos.61474113 and 61574140);the Beijing NOVA Program,China(Grant No.Z1611000049161132016071);China Academy of Engineering Physics(CAEP)Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201502);the Beijing Municipal Science and Technology Commission Project,China(Grant Nos.Z161100002116018 and D16110300430000);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2012098); The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxide-semiconductor （MOS） capacitors are investigated by measuring the capacitance voltage and current voltage. Th...; 关键词：4H-SiC metal-oxide-semiconductor capacitors TRENCH interface states nitric oxide annealing

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices: 《Chinese Physics B》2016年第7期546-552,共7页解冰清李博毕津顺卜建辉吴驰李彬鸿韩郑生罗家俊; Project supported by the National Natural Science Foundation of China(Grant Nos.61176095 and 61404169);the Youth Innovation Promotion Association of Chinese Academy of Sciences; The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator（SOI） metaloxide-silicon（MOS） field-effect-transistors（FETs） were presented in detail. The current and capaci...; 关键词：cryogenic temperature metal-oxide-semiconductor silicon-on-insulator capacitance

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature被引量：1: 《Chinese Physics B》2016年第3期445-447,共3页李柳暗张家琦刘扬敖金平; Project supported by the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260); In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process...; 关键词：metal-oxide-semiconductor heterostructure field-effect transistors low temperature ohmic pro-cess inductively coupled plasma

Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor: 《Chinese Physics B》2015年第7期384-386,共3页李睿郭春生冯士维石磊朱慧王琳; Project supported by the National Natural Science Foundation of China(Grant No.61204081); To obtain thermal contact resistance（TCR） between the vertical double-diffused metal-oxide-semiconductor（VDMOS） and the heat sink, we derived the relationship between the total thermal resistance and the contact f...; 关键词：thermal contact resistance nondestructive measurement method structure function contact pressure

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique: 《Chinese Physics B》2014年第5期505-509,共5页廖雪阳张凯曾畅郑雪峰恩云飞来萍郝跃; Project supported by the National Basic Research Program of China(Grant No.2011CBA00606); Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/A1GaN/GaN metal-oxide-semiconductor （MOS） structures. Two types of device structures, namely, the recessed ga...; 关键词：Al2O3/AlGaN/GaN interface trap states CONDUCTANCE CAPACITANCE

Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation被引量：2: 《Chinese Physics B》2014年第1期427-431,共5页谭桢赵连锋王敬许军; Project supported by the National Basic Research Program of China （Grant No. 201 ICBA00602） and the National Science and Technology Major Project, China （Grant No. 2011 ZX02708-002）.; Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully ...; 关键词：HFALO GASB metal-oxide-semiconductor capacitors interfacial properties

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate被引量：3: 《Chinese Physics B》2014年第1期494-499,共6页李聪庄奕琪张丽靳刚; Project supported by the National Natural Science Foundation of China （Grant Nos. 61204092 and 61076101） and the Fundamental Research Funds for the Central Universities of Ministry of Education of China （Grant No. K50511250001 ）.; Based on the quasi-two-dimensional （2D） solution of Poisson＇s equation in two continuous channel regions, an an- alytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding...; 关键词：junctionless device surrounding-gate MOSFET dual-material gate analytical model

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