云南高校图书馆联盟文献共享服务平台- SNAPBACK

SNAPBACK: 作品数：24被引量：35H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：郝跃陈万军张波马晓华朱志炜更多>>; 相关机构：电子科技大学西安电子科技大学中国电子科技集团第五十八研究所江南大学更多>>; 相关期刊：《Chinese Journal of Electronics》《Journal of Civil Engineering and Architecture》《Research》《物理学报》更多>>; 相关基金：国家自然科学基金北京市自然科学基金重庆市自然科学基金中国博士后科学基金更多>>

A 4H-SiC merged P–I–N Schottky with floating back-to-back diode被引量：2: 《Chinese Physics B》2022年第2期660-664,共5页Wei-Zhong Chen Hai-Feng Qin Feng Xu Li-Xiang Wang Yi Huang Zheng-Sheng Han; A novel 4 H-Si C merged P–I–N Schottky(MPS)with floating back-to-back diode(FBD),named FBD-MPS,is proposed and investigated by the Sentaurus technology computer-aided design(TCAD)and analytical model.The FBD feature...; 关键词：4H-SIC merged P-I-N Schottky(MPS) snapback effect turnover voltage floating back-to-back diode(FBD)

New DDSCR structure with high holding voltage for robust ESD applications被引量：1: 《Chinese Physics B》2021年第3期529-539,共11页Zi-Jie Zhou Xiang-Liang Jin Yang Wang Peng Dong; Project supported by the National Natural Science Foundation of China(Grant Nos.61774129,61827812,and 61704145);the Huxiang High-level Talent Gathering Project from the Hunan Science and Technology Department,China(Grant No.2019RS1037);the Changsha Science and Technology Plan Key Projects,China(Grant Nos.kq1801035 and kq1703001).; A novel dual direction silicon-controlled rectifier(DDSCR)with an additional P-type doping and gate(APGDDSCR)is proposed and demonstrated.Compared with the conventional low-voltage trigger DDSCR(LVTDDSCR)that has posi...; 关键词：dual direction silicon-controlled rectifier(DDSCR) failure current snapback gate voltage simulation transmission line pulsing(TLP)

Snapback-free shorted anode LIGBT with controlled anode barrier and resistance: 《Chinese Physics B》2021年第2期557-562,共6页Shun Li Jin-Sha Zhang Wei-Zhong Chen Yao Huang Li-Jun He Yi Huang; Project supported by the National Natural Science Foundation of China(Grant Nos.61604027 and 61704016);the Fund from Chongqing Technology Innovation and Application Development(Key Industry Research and Development),China(Grant No.cstc2018jszx-cyzd0646)。; A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier V_(barrier)and resistance R_(SA)in anode...; 关键词：shorted anode lateral-insulated gate bipolar transistor SNAPBACK BARRIER trade-off

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure: 《Journal of Semiconductors》2020年第10期50-55,共6页Chenxia Wang Jie Wei Diao Fan Yang Yang Xiaorong Luo; supported by Postdoctoral Innovative Talent Support Program under Grant BX20190059;the China Postdoctoral Science Foundation under Grant 2019M660235;the Sichuan Science and Technology Program under Project 2018JY0555;the Science and Technology on Analog Integrated Circuit Laboratory under Project 6142802180509。; A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side...; 关键词：snapback-free fast switching SOI LIGBT trench gate E_(off)

半超结抑制RC-TIGBT Snapback效应机理与仿真: 《微电子学》2019年第4期563-567,共5页陆素先向超王森钟传杰; 国家青年基金资助项目(61504049); 首次对半超结RC-TIGBT与传统RC-TIGBT的正向导通机理进行了比较研究。通过Silvaco TCAD软件仿真,模拟研究了Ydrift值、P-集电区宽度与N+短路区宽度等关键参数对Snapback效应的影响。结果表明,回退电压点随着Ydrift的减小而减小,且与Ydr...; 关键词：逆导IGBT 超结负阻效应集电极尺寸

Insight into multiple-triggering effect in DTSCRs for ESD protection被引量：2: 《Journal of Semiconductors》2017年第7期93-96,共4页Lizhong Zhang Yuan Wang Yize Wang Yandong He; supported by the Beijing Natural Science Foundation,China(No.4162030); The diode-triggered silicon-controlled rectifier（DTSCR） is widely used for electrostatic discharge（ESD） protection in advanced CMOS process owing to its advantages, such as design simplification, adjustable trigge...; 关键词：electrostatic discharge（ESD） diode-triggered silicon-controlled rectifier（DTSCR） double snapback transmission line pulse（TLP） test

A novel double trench reverse conducting IGBT with robust freewheeling switch: 《Journal of Semiconductors》2014年第8期79-83,共5页朱利恒陈星弼; Project supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities(No.E022050205); The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode ...; 关键词：reverse conducting insulated gate bipolar transistor SNAPBACK current concentration

Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor: 《Journal of Semiconductors》2014年第7期48-51,共4页朱利恒陈星弼; supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities of China(No.E022050205); Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort...; 关键词：reverse conducting IGBT snapback flee turn-off energy reverse-recovery charge

Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT被引量：2: 《Journal of Semiconductors》2014年第6期62-66,共5页朱利恒陈星弼; Project supported by the Fundamental Research Funds for the Central Universities(No.E022050205);the National Natural Science Foundation of China(No.51237001); A physically based equation for predicting required p-emitter length of a snapback-free reverse- conducting insulated gate bipolar transistor （RC-IGBT） with field-stop structure is proposed. The n-buffer resis- tanc...; 关键词：reverse conducting insulated gate bipolar transistor voltage snapback

A new short-anoded IGBT with high emission efficiency被引量：2: 《Journal of Semiconductors》2012年第11期48-51,共4页陈伟中张波李泽宏任敏李肇基; supported by the National Natural Science Foundation of China(Nos.60806025,61076082); A novel short-anoded insulated-gate bipolar transistor（SA-IGBT） with double emitters is proposed.At the on-state,the new structure shows extraordinarily high emission efficiency.Moreover,with a short-contacted anode...; 关键词：short-anode insulated-gate bipolar transistor snapback turn-off tradeoff

SNAPBACK