云南高校图书馆联盟文献共享服务平台- NMOSFET

NMOSFET: 作品数：136被引量：120H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：张鹤鸣胡辉勇郝跃刘卫东宋建军更多>>; 相关机构：西安电子科技大学中国科学院微电子研究所清华大学中国科学院大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家教育部博士点基金国家重点基础研究发展计划陕西省自然科学基金更多>>

Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET: 《Chinese Physics B》2018年第12期551-558,共8页Xin Xie Da-Wei Bi Zhi-Yuan Hu Hui-Long Zhu Meng-Ying Zhang Zheng-Xuan Zhang Shi-Chang Zou; The influence of characteristics’ measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on tota...; 关键词：total ionizing dose(TID) silicon-on-insulator(SOI) measurement sequence tunneling effect

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations: 《Chinese Physics B》2016年第8期347-351,共5页徐昊杨红罗维春徐烨峰王艳蓉唐波王文武祁路伟李俊峰闫江朱慧珑赵超陈大鹏叶甜春; supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129);the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences; The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,i...; 关键词：high-k metal gate TiN capping layer TDDB interface trap density

Distribution of electron traps in SiO_2/HfO_2 nMOSFET: 《Chinese Physics B》2016年第5期363-368,共6页侯晓慧郑雪峰王奥琛王颖哲文浩宇刘志镜李小炜吴银河; Project supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61474091);the New Experiment Development Funds for Xidian University,China(Grant No.SY1434);the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry,China(Grant No.JY0600132501); In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO_2 layer have been extracted. Two peaks are o...; 关键词：energy and spatial distribution electron trap HFO2

Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor: 《Chinese Physics B》2015年第7期595-600,共6页陈海峰过立新郑璞阳董钊张茜; Project supported by the National Natural Science Foundation of China(Grant No.61306131);the Research Project of Education Department of Shaanxi Province,China(Grant No.2013JK1095); Drain-modulated generation current IDMGinduced by interface traps in an n-type metal-oxide-semiconductor fieldeffect transistor（n MOSFET） is investigated. The formation of IDMGascribes to the change of the Si surfac...; 关键词：interface trap GENERATION surface potential NMOSFET

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET: 《Chinese Physics B》2014年第11期502-506,共5页梁斌陈建军池雅庆; supported by the National Natural Science Foundation of China(Grant No.61376109);the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component,China(Grant No.ZHD201202); Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentiona...; 关键词：substrate hot electron injection hot carrier injection （HCI） degradation interface trap oxidetrapped charge

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET: 《Chinese Physics B》2014年第5期525-529,共5页雷晓艺刘红侠张月马晓华郝跃; Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant No.61106106); The degradation produced by hot carrier （HC） in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor （nMOSFET） has been analyzed in this paper. The generation of negatively charged int...; 关键词：n-channel metal oxide semiconductor field effect transistor hot carder DEGRADATION lifetimemodel

A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process: 《Chinese Physics B》2013年第11期536-540,共5页许高博徐秋霞殷华湘周华杰杨涛牛洁斌余嘉晗李俊峰赵超; Project supported by the Beijing Natural Science Foundation,China(Grant No.4123106);the National Science and Technology Major Projects of the Ministry of Science and Technology of China(Grant No.2009ZX02035); A gate-last process for fabricating HfSiON/TaN n-channel metal-oxide-semiconductor-field-effect transistors （NMOSFETs） is presented. In the process, a HfSiON gate dielectric with an equivalent oxide thickness of 10 ...; 关键词：HFSION TAN gate-last process planarization

Degradation of the transconductance of a gate-modulated generation current in nMOSFET: 《Chinese Physics B》2012年第8期564-569,共6页陈海峰过立新杜慧敏; Project supported by the Shaanxi Provincial Research Project of Education Department,China (Grant No. 11JK0902);the Xi’an Municipal Applied Materials Innovation Fund,China (Grant No. XA-AM-201012); The degradation of transconductance （G） of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress （EIS）. The trapped elect...; 关键词：generation current TRANSCONDUCTANCE electron injection alternate stress DEGRADATION

Bias dependence of a deep submicron NMOSFET response to total dose irradiation: 《Chinese Physics B》2011年第7期117-122,共6页刘张李胡志远张正选邵华陈明毕大炜宁冰旭邹世昌; Deep submicron n-channel metal-oxide-semiconductor field-effect transistors （NMOSFETs） with shallow trench isolation （STI） are exposed to ionizing dose radiation under different bias conditions. The total ionizing...; 关键词：bias condition oxide trapped charge shallow trench isolation total ionizing dose

Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET: 《Chinese Physics B》2010年第12期472-477,共6页刘红侠李斌李劲袁博郝跃; Project supported by the National Natural Science Foundation of China(Grant Nos.60976068 and 60936005);Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(Grant No.708083);Fundamental Research Funds for the Central Universities(Grant No.200807010010); This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor （nMOSFET） fabricated on silicon-on-aluminum nitride （...; 关键词：electrical characteristics self-heating effect SiGe-on insulator SiGe-silicon-on-aluminum nitride

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