云南高校图书馆联盟文献共享服务平台- HFETS

HFETS: 作品数：10被引量：6H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：吕元杰郭红雨冯志红张志荣谭鑫更多>>; 相关机构：山东大学中国科学院杭州电子科技大学河北半导体研究所更多>>; 相关期刊：《红外与毫米波学报》《Chinese Physics B》《Journal of Semiconductors》更多>>; 相关基金：国家自然科学基金国家教育部博士点基金国家重点基础研究发展计划更多>>

Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions被引量：2: 《Chinese Physics B》2018年第4期426-431,共6页Wei Mao Hai-Yong Wang Peng-Hao Shi Xiao-Fei Wang Ming Du Xue-Feng Zheng Chong Wang Xiao-Hua Ma Jin-Cheng Zhang Yue Hao; Project supported by the National Natural Science Foundation of China(Grant Nos.61574112,61334002,61474091,and 61574110);the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.605119425012); A novel Ga N-based vertical heterostructure field effect transistor（HFET） with nonuniform doping superjunctions（non-SJ HFET） is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance（RonA...; 关键词：GaN-based vertical HFETs nonuniform doping superjunctions minimized specific on-resistance breakdown voltage

Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors: 《Chinese Physics B》2017年第12期456-461,共6页崔鹏林兆军付晨刘艳吕元杰; Project supported by the National Natural Science Foundation of China(Grant Nos.11174182,11574182,and 61674130); AlGaN/GaN heterostructure field-effect transistors （HFETs） with different floating gate lengths and floating gates annealed at different temperatures, are fabricated. Using the measured capacitance-voltage curves of...; 关键词：AlGaN/GaN HFETs floating gate rapid thermal annealing STRAIN

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors: 《Chinese Physics B》2017年第9期389-395,共7页刘艳林兆军吕元杰崔鹏付晨韩瑞龙霍宇杨铭; Project supported by the National Natural Science Foundation of China(Grant Nos.11174182,11574182,and 61306113);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20110131110005); The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） an...; 关键词：AlGaN/AlN/Ga N heterostructure field-effect transistors（HFETs） parasitic source resistance polarization Coulomb field scattering

基于60nmT型栅f_T&f_(max)为170&210 GHz的InAlN/GaN HFETs器件（英文）被引量：2: 《红外与毫米波学报》2016年第6期641-645,共5页吕元杰冯志红张志荣宋旭波谭鑫郭红雨尹甲运房玉龙蔡树军; Supported by National Natural Science Foundation of China(61306113); 基于蓝宝石衬底InAlN/GaN异质结材料研制具有高电流增益截止频率(f_T)和最大振荡频率(f_(max))的InAlN/GaN异质结场效应晶体管(HFETs).基于再生长n+GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600nm.此外,采用自对准...; 关键词：InAlN/GaN 异质结场效应晶体管(HFETs) 电流增益截止频率(fT) 最大振荡频率(fmax)

基于MOCVD再生长n_+ GaN欧姆接触工艺f_T/f_(max)>150/210 GHz的AlGaN/GaN HFETs器件研究（英文）被引量：1: 《红外与毫米波学报》2016年第5期534-537,568,共5页吕元杰冯志红宋旭波张志荣谭鑫郭红雨房玉龙周幸叶蔡树军; Supported by the National Natural Science Foundation of China(61306113); 基于SiC衬底AlGaN/GaN异质结材料研制具有高电流增益截止频率(fT)和最大振荡频率(fmax)的AlGaN/GaN异质结场效应晶体管(HFETs).基于MOCVD外延n+GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm.此外,采用自对准工...; 关键词：ALGAN/GAN 异质结场效应晶体管电流增益截止频率最大振荡频率再生长欧姆接触

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate被引量：1: 《Chinese Physics B》2016年第8期357-360,共4页张家琦王磊李柳暗王青鹏江滢朱慧超敖金平; Self-aligned-gate heterostructure field-effect transistor（HFET） is fabricated using a wet-etching method.Titanium nitride（TiN） is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au...; 关键词：AlGaN/GaN HFETs wet etching self-aligned-gate

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors: 《Chinese Physics B》2015年第11期406-409,共4页杨铭林兆军赵景涛王玉堂李志远吕元杰冯志红; supported by the National Natural Science Foundation of China(Grant Nos.11174182 and 61306113);the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20110131110005); A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors （HFETs） by applying a voltage bias on the substrate is presented. With the increase ...; 关键词：AlaN/GaN heterostructure field effect transistors （HFETs） switching characteristics substratebias

Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors: 《Journal of Semiconductors》2014年第9期65-70,共6页栾崇彪林兆军吕元杰冯志红赵景涛周阳杨铭; Project supported by the National Natural Science Foundation of China(No.11174182);the Specialized Research Fund for the Doctoral Program of Higher Education(No.20110131110005);the Graduate Independent Innovation Foundation of Shandong University,GIIFSDU(No.yzc12064); Using the measured capacitance-voltage curves ofNi/Au Schottky contacts with different areas and the current-voltage characteristics for the A1GaAs/GaAs, A1GaN/A1N/GaN and InoAsA10.szN/A1N/GaN heterostructure field-ef...; 关键词：Ⅲ-V nitride and AlGaAs/GaAs HFETs polarization Coulomb field scattering 2DEG electron mo-bility

Analytical charge control model for AlGaN/GaN MIS-HFETs including an undepleted barrier layer: 《Journal of Semiconductors》2010年第9期25-31,共7页卢盛辉杜江锋罗谦于奇周伟夏建新杨漠华; An analytical charge control model considering the insulator/AlGaN interface charge and undepleted Al-GaN barrier layer is presented for AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors...; 关键词：ALGAN/GAN MIS-HFET 2DEG analytical charge control model

Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures: 《Chinese Physics B》2006年第3期636-640,共5页常远程张义门张玉明; Based on the investigation of the influence of temperatures on parameters, including polarization, electron mobility, thermal conductivity, and conduction band discontinuity at the interface between AlGaN and GaN, the...; 关键词：AlGaN/GaN HFETs TRANSCONDUCTANCE high temperature

HFETS