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Artificial self-powered and self-healable neuromorphic vision skin utilizing silver nanoparticle-doped ionogel photosynaptic heterostructure: 《Journal of Semiconductors》2025年第1期205-213,共9页Xinkai Qian Fa Zhang Xiujuan Li Junyue Li Hongchao Sun Qiye Wang Chaoran Huang Zhenyu Zhang Zhe Zhou Juqing Liu; the financial support from the National Natural Science Foundation of China(62274088,62288102);the Project funded by China Postdoctoral Science Foundation(2023M741657);the Jiangsu Funding Program for Excellent Postdoctoral Talent(2023ZB554);the Jiangsu Specially-Appointed Professor program。; Artificial skin should embody a softly functional film that is capable of self-powering,healing and sensing with neuromorphic processing.However,the pursuit of a bionic skin that combines high flexibility,self-healabi...; 关键词：neuromorphic vision skin ionogel heterojuction LSPR photosynapse

Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate: 《Journal of Semiconductors》2024年第10期60-68,共9页Yehua Tang Yuchao Wang Chunlan Zhou Ke-Fan Wang; support given by the Natural Science Foundation of Nantong(Grant NO.JC2023065);the Research Program of Nantong Institute of Technology(Grant NO.2023XK(B)07).; Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are compre...; 关键词：polysilicon film boron doping ammonium tetraborate tetrahydrate(ATT) electrical properties CRYSTALLIZATION

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2): 《Journal of Semiconductors》2024年第4期36-41,共6页Fei Sun Yi Peng Guoqiang Zhao Xiancheng Wang Zheng Deng Changqing Jin; supported by Beijing Natural Science Foundation (No. 2212049);NSF of China (No. 11974407);CAS Project for Young Scientists in Basic Research (No. YSBR-030);the Youth Innovation Promotion Association of CAS (No. 2020007); Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi energy.Correspondingly,structural evolution...; 关键词：magnetic semiconductor high-pressure in-situ X-ray diffraction phase transition

Spin injection into heavily-doped n-GaN via Schottky barrier: 《Journal of Semiconductors》2023年第8期57-61,共5页Zhenhao Sun Ning Tang Shuaiyu Chen Fan Zhang Haoran Fan Shixiong Zhang Rongxin Wang Xi Lin Jianping Liu Weikun Ge Bo Shen; This work was supported by the National Key Research and Development Program of China(Nos.2022YFB3605604,and 2018YFE0125700);the National Natural Science Foundation of China(Nos.62225402,61927806,62234001,and U22A2074).The authors are grateful for the technical support for Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO),Chinese Academy of Sciences.; Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contac...; 关键词：GAN spin injection Schottky barrier MAGNETORESISTANCE

Homoepitaxial growth of (100) Si-doped β-Ga_(2)O_(3) films via MOCVD: 《Journal of Semiconductors》2023年第6期39-45,共7页Wenbo Tang Xueli Han Xiaodong Zhang Botong Li Yongjian Ma Li Zhang Tiwei Chen Xin Zhou Chunxu Bian Yu Hu Duanyang Chen Hongji Qi Zhongming Zeng Baoshun Zhang; supported in part by the National Basic Research Program of China (Grant No. 2021YFB3600202);Key Laboratory Construction Project of Nanchang (Grant No. 2020-NCZDSY-008);Suzhou Science and Technology Foundation (Grant No. SYG202027)。; Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth ...; 关键词：homoepitaxial growth MOCVD Si-doping films high activation efficiency Ohmic contacts

Humidity sensing properties of spray deposited Fe doped TiO_(2)thin film被引量：1: 《Journal of Semiconductors》2021年第12期62-71,共10页Dipak L Gapale Pranav P.Bardapurkar Sandeep A.Arote Sanjaykumar Dalvi Prashant Baviskar Ratan Y Borse; In the present work,ferrite(Fe)doped TiO_(2)thin films with different volume percentage(vol%)were synthesized using a spray pyrolysis technique.The effect of Fe doping on structural properties such as crystallite size...; 关键词：Fe doped TiO_(2) thin films spray pyrolysis humidity sensing

Heavily doped silicon:A potential replacement of conventional plasmonic metals被引量：1: 《Journal of Semiconductors》2021年第6期35-40,共6页Md.Omar Faruque Rabiul Al Mahmud Rakibul Hasan Sagor; The plasmonic property of heavily doped p-type silicon is studied here.Although most of the plasmonic devices use metal-insulator-metal(MIM)waveguide in order to support the propagation of surface plasmon polaritons(S...; 关键词：alternative plasmonic material heavily doped p-silicon surface plasmon polaritons

Four-wave mixing in silicon-nanocrystal embedded high-index doped silica micro-ring resonator: 《Journal of Semiconductors》2021年第4期104-110,共7页Yuhua Li Xiang Wang Roy Davidson Brent E.Little Sai Tak Chu; the Research Grants Council,University Grants Committee(GRF 11213618);the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB24030300).; A nonlinear integrated optical platform that allows the fabrication of waveguide circuits with different material composition,and at small dimensions,offers advantages in terms of field enhancement and increased inter...; 关键词：four-wave mixing silicon nanocrystal high-index doped silica micro-ring resonator

Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals: 《Journal of Semiconductors》2019年第4期13-16,共4页Guiying Shen Youwen Zhao Yongbiao Bai Jingming Liu Hui Xie Zhiyuan Dong Jun Yang Ding Yu; Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski(LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is ...; 关键词：Te-doped GASB HALL native DEFECTS PL

The structure and magnetic properties of β-(Ga_(0.96)Mn_(0.04))_2O_3 thin film: 《Journal of Semiconductors》2018年第5期16-20,共5页Yuanqi Huang Zhengwei Chen Xiao Zhang Xiaolong Wang Yusong Zhi Zhenping Wu Weihua Tang; Project supported by the National Natural Science Foundation of China(Nos.11404029,51572033,51172208);the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT); High quality epitaxial single phase（Ga_（0.96）Mn_（0.04））_2O_3 and Ga_2O_3 thin films have been prepared on sapphire substrates by using laser molecular b（eam）epitaxy（L-MBE）. X-ray diffraction results indicate...; 关键词：L-MBE epitaxial growth Mn doped Ga2O3 thin film RT ferromagnetism

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