国家自然科学基金(60876027)

作品数：7被引量：2H指数：1
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A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
《Chinese Physics B》2012年第4期478-485,共8页张健 何进 周幸叶 张立宁 马玉涛 陈沁 张勖凯 杨张 王睿斐 韩雨 陈文新 
supported by the National Natural Science Foundation of China (Grant No. 60876027);the State Key Program of the National Natural Science Foundation of China (Grant No. 61036004);the Shenzhen Science and Technology Foundation, China (Grant No. CXB201005250031A);the Fundamental Research Project of Shenzhen Science and Technology Foundation, China (Grant No. JC201005280670A);the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A)
A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to...
关键词：charge-based model silicon-on-insulator metal-oxide semiconductor field-effect transis- tors compact model double gate 
An improvement to computational efficiency of the drain current model for double-gate MOSFET
《Chinese Physics B》2011年第9期392-395,共4页周幸叶 张健 周致赜 张立宁 马晨月 吴文 赵巍 张兴 
Project supported by the National Natural Science Foundation of China (Grant No.60876027);the National Science Foundation for Distinguished Young Scholars of China (Grant No.60925015);the National Basic Research Program of China (Grant No.2011CBA00600);the Fundamental Research Project of Shenzhen Science & Technology Foundation,China (Grant No.JC200903160353A)
As a connection between the process and the circuit design, the device model is greatly desired for emerging devices, such as the double-gate MOSFET. Time efficiency is one of the most important requirements for devic...
关键词：computational efficiency compact model DOUBLE-GATE MOSFET 
A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region被引量：1
《Chinese Physics B》2011年第1期501-506,共6页何进 刘峰 周幸叶 张健 张立宁 
Project supported by the National Natural Science Foundation of China(Grant No.60876027);the Open Funds of Jiangsu Province Key Lab of ASIC Design(JSICK1007)
A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derive...
关键词：MOSFETS TRANSISTORS doping modeling double-gate （DG） 
Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region被引量：1
《Journal of Semiconductors》2010年第6期27-33,共7页何进 郑睿 张立宁 张健 林信南 陈文新 
Project supported by the National Natural Science Foundation of China(No.60876027);the Competitive Earmarked Program from the Research Grant Council of Hong Kong SAR,China(No.HKUST6289/04E);the Industry,Education and Academy Cooperation Program of Guangdong Province,China(No.2009B090300318);the Fundamental Research Project of Shenzhen Science & Technology Foundation,China(No.JC200903160353A).
A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion regio...
关键词：non-classical CMOS surrounding-gate MOSFETs device physics surface potential accuracy continuity issue 
An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor
《Chinese Physics B》2010年第4期398-401,共4页张立宁 何进 周旺 陈林 徐艺文 
Project supported by National Natural Science Foundation of China (Grant No. 60876027);Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200800010054)
This paper studies an oxide/silicon core/shell nanowire MOSFET （OS-CSNM）. Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher Ion/Ioff ratio aft...
关键词：core/shell NANOWIRE nanowire MOSFET 
A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks
《Journal of Semiconductors》2009年第8期63-66,共4页何进 马晨月 张立宁 张健 张兴 
supported by the Special Funds for the State Key Development Program for Basic Research of China;the National Natural Science Foundation of China (No.60876027)
A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Star...
关键词：high-k gate stack nanoscale MOSFETs interface trap and charges trapping and detrapping threshold voltage dynamic behavior compact modeling 
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
《Journal of Semiconductors》2009年第2期30-33,共4页何进 张健 张立宁 马晨月 陈文新 
supported by the National Natural Science Foundation of China (No. 60876027);a Competitive Earmarked Grant from theResearch Grant Council of Hong Kong SAR (No. HKUST6289/04E);the International Joint Research Program from Japan (No.NEDOO5/06.EG01).
A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s du...
关键词：non-classical MOS transistor surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approximation 
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