云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2011CBA00600)

国家重点基础研究发展计划(2011CBA00600): 作品数：15被引量：29H指数：3; 导出分析报告; 相关作者：张兴杜刚王源刘帅张凯更多>>; 相关机构：西安电子科技大学北京大学中国空间技术研究院更多>>; 相关期刊：《Chinese Physics Letters》《Science Bulletin》《物理学报》《Chinese Physics B》更多>>; 相关主题：MEMORYHIGH_ELECTRON_MOBILITY_TRANSISTORSALGAN/GANTHIN_FILM超低功耗更多>>; 相关领域：电子电信理学自动化与计算机技术轻工技术与工程更多>>

Semiconductor performance of rare earth gadolinium-doped aluminum–zinc oxide thin film被引量：1: 《Rare Metals》2016年第9期672-675,共4页Jun-Chen Dong De-Dong Han Fei-Long Zhao Nan-Nan Zhao Jing Wu Li-Feng Liu Jin-Feng Kang Yi Wang; financially supported by the National Basic Research Program of China (No.2011CBA00600);the National Natural Science Foundation of China (No.61275025); Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical...; 关键词：Rare earth Gd–AZO thin film Optical properties Electrical properties Semiconductor properties

Characteristics of atomic layer deposited transparent aluminumdoped zinc oxide thin films at low temperature被引量：1: 《Rare Metals》2016年第7期509-512,共4页Fei-Long Zhao Jun-Chen Dong Nan-Nan Zhao Jing Wu De-Dong Han Jin-Feng Kang Yi Wang; financially supported by the National Basic Research Program of China(No.2011CBA00600);the National Natural Science Foundation of China(No.61275025); Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, st...; 关键词：Atomic layer deposition Aluminum-doped ZnO thin film TRANSPARENT UNIFORMITY

A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time: 《Chinese Science Bulletin》2014年第29期3935-3942,共8页Yu Wang Zongliang Huo Huamin Cao Ting Li Jing Liu Liyang Pan Xing Zhang Yun Yang Shenfeng Qiu Hanming Wu Ming Liu; supported in part by the Ministry of Science and Technology of China (2010CB934200,2011CBA00600);the National Natural Science Foundation of China (61176073);the National Science and Technology Major Project of China (2009ZX02023-005);the Director’s Fund of Institute of Microelectronics,Chinese Academy of Science; This paper presents a 65-nm 1-Gb NOR-type floating-gate flash memory,in which the cell device and chip circuit are developed and optimized.In order to solve the speed problem of giga-level NOR flash in the deep submic...; 关键词：NOR闪存访问时间 GB 浮栅 NS 深亚微米工艺芯片电路速度问题

Radio-frequency transistors from millimeter-scale graphene domains: 《Chinese Physics B》2014年第11期470-475,共6页魏子钧傅云义刘竞博王紫东贾越辉郭剑任黎明陈远富张酣黄如张兴; supported by the National Basic Research Program of China(Grant Nos.2011CBA00600,2011CBA00601,and 2013CBA01604);the National Natural Science Foundation of China(Grant No.60625403);the National Science and Technology Major Project of China(Grant No.2011ZX02707); Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high sa...; 关键词：millimeter-scale graphene domain radio-frequency transistor cut-off frequency maximum oscil-lation frequency

Comparison between N_2 and O_2 anneals on the integrity of an Al_2O_3/Si_3N_4/SiO_2/Si memory gate stack: 《Chinese Physics B》2014年第8期172-176,共5页褚玉琼张满红霍宗亮刘明; Project supported in part by the National Basic Research Program of China(Grant Nos.2010CB934200 and 2011CBA00600);the National Natural Science Foundation of China(Grant Nos.61176073 and 61176080);the Director’s Fund of the Institute of Microelectronics,Chinese Academy of Sciences; In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat...; 关键词：charge trapping memory post deposition anneal ENDURANCE TRAPS

Degradation Characteristics of Resistive Switching Memory Devices Correlated with Electric Field Induced Ion-Migration Effect of Anode: 《Chinese Physics Letters》2013年第11期157-159,共3页LIU Rui QIU Gang CHEN Bing GAO Bin KANG Jin-Feng; Supported by the National Basic Research Program of China(2011CBA00600);the National Natural Science Foundation of China(61334007).; The electrode effect of resistive switching memory devices on resistive switching behaviors is studied.Compared to TiN-or Ti-electrode devices,significantly reduced switching parameters such as resistance-ratio of hig...; 关键词：SWITCHING ELECTRODE EFFECT

超低功耗集成电路技术被引量：15: 《中国科学：信息科学》2012年第12期1544-1558,共15页张兴杜刚王源刘晓彦; 国家重点基础研究发展计划(批准号:2011CBA00600)资助项目; 集成电路技术遵循摩尔定律发展进入了纳米尺度,功耗带来的挑战日益突出,已经成为制约集成电路发展的瓶颈问题.微电子技术的发展已经进入了"功耗限制"的时代,功耗成为集成电路设计和制备中的核心问题.降低功耗有可能替代原来提高集成度...; 关键词：微电子器件集成电路设计集成电路工艺功耗分析低功耗

斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究被引量：2: 《物理学报》2012年第18期343-348,共6页林志宇张进成许晟瑞吕玲刘子扬马俊彩薛晓咏薛军帅郝跃; 国家重点基础研究发展计划(973计划)(批准号:2011CBA00600);国家科技重大专项(批准号:2008ZX01002-002);国家自然科学基金重大项目(批准号:60890191);中央高校基本科研业务费专项资金(批准号:K50511250002)~~; 利用MOCVD技术在斜切角度为0.3°的c面蓝宝石衬底上生长了非故意掺杂GaN薄膜,并采用透射电子显微镜对材料的质量和材料内部缺陷进行了分析.研究发现斜切蓝宝石衬底上外延的GaN材料中,位错在距离衬底0.8μm附近大量湮灭,同时位错扎堆出现...; 关键词：GaN 斜切衬底透射电子显微镜.位错

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications: 《Journal of Semiconductors》2012年第8期67-70,共4页张君宇王永刘璟张满红许中广霍宗亮刘明; Project supported by the National Basic Research Program of China(Nos.2010CB934204,2011CBA00600);the National Natural Science Foundation of China(Nos.60825403,60676008,60676061);the Hi-Tech Research and Development Program of China(Nos. 2008AA031403,2009AA03Z306); We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） applications.By using the band-to-band tunneling-induced hot-electron （BTBTIHE） injec...; 关键词：P-CHANNEL select transistor nano-crystal memory EMBEDDED

Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique被引量：1: 《Chinese Physics B》2012年第7期484-486,共3页杨丽媛薛晓咏张凯郑雪峰马晓华郝跃; Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600);the National Natural Science Foundation of China (Grant No. 61106106);the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006); Self-heating in a multifinger A1GaN/GaN high electron mobility transistor （HEMT） is investigated by micro-Raman spectroscopy, The device temperature is probed on the die as a function of applied bias. The operating ...; 关键词：A1GaN/GaN high electron mobility transistors Raman spectroscopy TEMPERATURE

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