Project supported by the National Natural Science Foundation of China (Grant Nos. 10774090 and 11174182);the National Basic Research Program of China (Grant No. 2007CB936602);the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005)
An Ni Schottky contact on the A1GaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the A1GaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With...
supported by the National Basic Research Program of China (2011CB933700 and 2007CB936602);the National Natural Science Foundation of China (20971126, 21071147, 21071107 and 91126020)
Graphene is an interesting two-dimensional carbon allotrope that has attracted considerable research interest because of its unique structure and physicochemical properties. Studies have been conducted on graphene-bas...
Project supported by the National Natural Science Foundation of China(Grant No.10774090);the National Basic Research Program of China(Grant No.2007CB936602)
Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes (SBDs). Based on the measured...
Project supported by the National Natural Science Foundation of China (Grant No.10774090);the National Basic Research Program of China (Grant No.2007CB936602)
Ni Schottky contacts on A1GaN/CaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N2 ambience at 600 ~C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h),...
supported by the National Natural Science Foundation of China (Grant No.10774090);the National Basic Research Program of China (Grant No.2007CB936602)
Ni Schottky contacts on A1GaN/GaN heterostructures have been fabricated. The samples are then thermally treated in a furnace with N2 ambient at 600℃ for different times (0.5, 4.5, 10.5, 18, 33, 48 and 72 h). Curren...
Project supported by National Natural Science Foundation of China (No. 20675048);National High-Tech Research and Development Program of China (863 Program, No. 07AA10Z435, No. 2007AA06A407);National Basic Research Program of China (973 Program, No. 2007CB936602)
This project was supported by the National Basic Research Program of China (No. 2007CB936602) and the Natural Science Foundation of Shandong Province in China (No. Y2008B20).
The fluorescence quenching of inclusion complex of neutral red (NR) and hydroxypropyl-β-cyclodextrin (HP-β-CD) carried by chlorobenzene was investigated. The fluorescence intensity of NR increased due to the for...
supported by the National Natural Science Foundation of China (Grant No 10774090);the National Basic Research Program of China (Grant No 2007CB936602)
Using the measured capacitance voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barr...