云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(61204081)

国家自然科学基金(61204081): 作品数：11被引量：27H指数：3; 导出分析报告; 相关作者：郭春生冯士维朱慧李睿张燕峰更多>>; 相关机构：北京工业大学中国电子技术标准化研究所中国电子科技集团第十三研究所更多>>; 相关期刊：《物理学报》《Chinese Physics B》《北京工业大学学报》《Journal of Semiconductors》更多>>; 相关主题：ALGAN/GAN结温DRAIN高速电子红外热像更多>>; 相关领域：电子电信自动化与计算机技术理学更多>>

基于PID自校准算法的IGBT温升控制实现被引量：3: 《北京工业大学学报》2016年第7期989-993,共5页张小玲陈君谢雪松张博文熊文雯任云袁芳; 国家自然科学青年基金资助项目(61204081); 针对功率循环实验中绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)温度过冲和滞后问题,设计了一种自校准PID算法控制IGBT温升.通过MATLAB进行PID建模及参数仿真,采用电学法测试原理并结合嵌入式系统测试IGBT结温,使用PI...; 关键词：自校准PID 电学法结温

加载功率与壳温对AlGaN/GaN高速电子迁移率晶体管器件热阻的影响被引量：7: 《物理学报》2016年第7期265-270,共6页郭春生李世伟任云翔高立冯士维朱慧; 国家自然科学基金(批准号:61204081);北京市教委基金(批准号:KM201510005008)资助的课题~~; 结温是制约器件性能和可靠性的关键因素,通常利用热阻计算器件的工作结温.然而,器件的热阻并不是固定值,它随器件的施加功率、温度环境等工作条件的改变而变化.针对该问题,本文以CREE公司生产的高速电子迁移率晶体管(HEMT)器件为研究对...; 关键词：AlGaN/GaN高速电子迁移率晶体管热阻红外热像测温法 Sentaurus TCAD模拟

Thermal analysis in high power GaAs-based laser diodes被引量：3: 《Journal of Semiconductors》2016年第4期88-92,共5页龚雪芹冯士维岳元杨军伟李经纬; Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081); The thermal characteristics of 808 nm Al Ga As/Ga As laser diodes（LDs） are analyzed via electrical transient measurements and infrared thermography. The temperature rise and thermal resistance are measured at variou...; 关键词：laser diodes temperature rise thermal resistance electrical transient measurement infrared thermography

瞬态大电流测量结温中校温曲线弯曲现象的研究被引量：3: 《物理学报》2015年第18期398-403,共6页郭春生王琳翟玉卫李睿冯士维朱慧; 国家自然科学基金(批准号:61204081)资助的课题~~; 利用脉宽250μs、占空比5%的0-1.5 A脉冲电流,分别在50,70,90,110,130℃条件下,对TO-247-2L封装型PIN快恢复二极管大电流下的校温曲线进行了测量分析.研究发现,恒定大电流条件下,二极管的校温曲线随温度变化发生弯曲.分析表明,弯曲现象...; 关键词：二极管瞬态大电流校温曲线串联电阻

Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor: 《Chinese Physics B》2015年第7期384-386,共3页李睿郭春生冯士维石磊朱慧王琳; Project supported by the National Natural Science Foundation of China(Grant No.61204081); To obtain thermal contact resistance（TCR） between the vertical double-diffused metal-oxide-semiconductor（VDMOS） and the heat sink, we derived the relationship between the total thermal resistance and the contact f...; 关键词：thermal contact resistance nondestructive measurement method structure function contact pressure

Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress被引量：2: 《Journal of Semiconductors》2015年第7期78-82,共5页石磊冯士维刘琨张亚民; Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081);the Beijing Natural Science Foundation(Nos.4132022,4122005); The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in A1GaN/GaN high electron mobility transistors. The device was measured ever...; 关键词：AIGaN/GaN HEMTs surface states self-changing STRESS

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs被引量：1: 《Journal of Semiconductors》2014年第10期37-40,共4页张亚民冯士维朱慧龚雪芹邓兵马琳; Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081);the Beijing Natural Science Foundation(Nos.4132022,4122005);the Guangdong Strategic Emerging Industry Project of China(No.2012A080304003);the Doctoral Fund of Innovation of Beijing University of Technology; The effects of self-heating and traps on the drain current transient responses of AlGaN/GaN HEMTs are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has be...; 关键词：AlGaN/GaN HEMTs drain transient response channel temperature rise SELF-HEATING TRAPS

Evaluation of the drain–source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method被引量：1: 《Journal of Semiconductors》2014年第9期60-64,共5页马琳冯士维张亚民邓兵岳元; Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081);the Beijing Natural Science Foundation(Nos.4132022,4122005);the Guangdong Strategic Emerging Industry Project of China(No.2012A080304003);the Doctoral Fund of Innovation of Beijing University of Technology; The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward tren...; 关键词：AIGaAs/InGaAs PHEMTs structure function method thermal resistance drain-source voltage

Identifying the failure mechanism in accelerated life tests by two-parameter lognormal distributions: 《Journal of Semiconductors》2014年第8期110-114,共5页郭春生张燕峰万宁朱慧冯士维; Project supported by the National Natural Science Foundation of China(No.61204081);the Research Project in Guangdong Province,China(No.2011B090400463);the Guangdong Provincial Science and Technology Major Project of the Ministry of Science and Technology of China(Nos.2011A080801005,2012A080304003); The failure mechanism stimulated by accelerated stress in the degradation may be different from that under normal conditions, which would lead to invalid accelerated life tests. To solve the problem, we study the re- ...; 关键词：Arrhenius model accelerated life tests failure mechanisms lognormal distribution

基于反应动力学的GaN LED参数退化模型的研究被引量：6: 《物理学报》2013年第21期460-465,共6页郭春生张燕峰万宁李睿朱慧冯士维; 国家自然科学基金(批准号:61204081);广东省产学研项目(批准号:2011B090400262);广东省重大科技专项项目(批准号:2012A080304003;2011A080801005)资助的课题~~; 加速实验中,参数退化模型描述了参数的退化规律,参数退化规律对应于器件退化机理,而退化机理又对应于内部的物理化学反应.因此,本文基于反应动力学中物理化学反应的温度效应速率模型及反应量浓度随时间的变化规律,研究并建立了GaN LED...; 关键词：参数退化模型反应动力学加速实验 GAN LED

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