云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2013CB932904)

国家重点基础研究发展计划(2013CB932904): 作品数：16被引量：24H指数：3; 导出分析报告; 相关作者：牛智川张宇廖永平徐应强王国伟更多>>; 相关机构：中国科学院中国科学技术大学北京航空航天大学中国科学院大学更多>>; 相关期刊：《Chinese Physics B》《Journal of Semiconductors》《半导体光电》《电子显微学报》更多>>; 相关主题：GASBMILENGTHD-WAVE中红外更多>>; 相关领域：电子电信理学机械工程一般工业技术更多>>

全息光刻制备LC-DFB及光栅刻蚀优化（英文）被引量：3: 《红外与毫米波学报》2018年第2期140-143,153,共5页李欢杨成奥谢圣文黄书山柴小力张宇王金良牛智川; Supported by National Natural Science Foundation of China(61435012,61290303);the National 973 program(2014CB643903,2013CB932904); 成功制备出室温激射波长为2μm的Ga Sb基侧向耦合分布反馈量子阱激光器.采用全息曝光及电感耦合等离子体刻蚀技术制备二阶布拉格光栅.优化了光栅制备的刻蚀条件,并获得室温2μm单纵模激射.激光器输出光功率超过5 m W,最大边模抑制比达到...; 关键词：镓锑基侧向耦合分布反馈 LC-DFB 全息光刻二阶布拉格光栅

Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices: 《Chinese Physics B》2017年第9期526-529,共4页孙姚耀吕粤希韩玺郭春妍蒋志郝宏玥蒋洞微王国伟徐应强牛智川; Project supported by the National Basic Research Program of China(Grant Nos.2016YFB0402403 and 2013CB932904);the National Natural Science Foundation of China(Grant Nos.61290303 and 61306013);China Postdoctoral Science Foundation(Grant No.2016M601100); In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2....; 关键词：short-/mid-wavelength InGaAsSb InAs/GaSb

Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm被引量：1: 《Chinese Physics B》2017年第8期565-568,共4页徐建星李金伦魏思航马奔张翼张宇倪海桥牛智川; supported by the National Instrument Program of China(Grant No.2012YQ140005);the National Key Basic Research Program of China(Grant Nos.2013CB932904 and 2016YFB0402403);the National Natural Science Foundation of China(Grant Nos.61274125 and 61435012); A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructur...; 关键词：THZ InGaAs/InAIAs MLHS photoconductive antenna

高功率GaSb基2.6微米InGaAsSb/AlGaAsSbⅠ型量子阱室温工作激光器(英文)被引量：6: 《红外与毫米波学报》2017年第3期257-260,共4页柴小力张宇廖永平黄书山杨成奥孙姚耀徐应强牛智川; Supported by the National Basic Research Program of China(2014CB643903,2013CB932904);the National Natural Science Foundation of China(61435012,61306088,61274013); 成功制备出2.6μmGaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备(MBE)生长出器件的材料结构.为了得到更好的光学质量,将量子阱的生长温度优化至500℃,并将量子阱的压应变调节为1.3%.制备了脊宽100μm、腔长1....; 关键词：镓锑基半导体激光器量子阱中红外

耦合双纳米颗粒的表面等离激元计算: 《电子显微学报》2017年第3期195-201,共7页姚湲崔婕沈希王岩国禹日成; 科技部国家重点研发计划项目(No.2016YFA0202504);国家重点基础研究发展计划项目(No.2013CB932904);国家自然科学基金资助项目(Nos.1137434;11574376); 本文以耦合的Au纳米双颗粒以及Au/Cd S核壳双颗粒为例,介绍了利用有限元多物理场耦合软件COMSOL计算电子能量损失谱的方法。计算结果不仅证实了实验中观察到的共振吸收峰随电子束入射点远离颗粒而红移的结果,也揭示出高能电子所激发的...; 关键词：透射电子显微镜电子能量损失谱表面等离激元

Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array被引量：2: 《Chinese Physics B》2017年第4期411-414,共4页郝宏玥向伟王国伟徐应强韩玺孙瑶耀蒋洞微张宇廖永平魏思航牛智川; Project supported by the National Basic Research Program of China(Grant Nos.2014CB643903,2013CB932904,2012CB932701,and 2011CB922201);the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005);the National Natural Science Foundation of China(Grant Nos.61274013,U1037602,61306013,and 61290303);the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200);China Postdoctoral Science Foundation(Grant No.2014M561029); In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer...; 关键词：InAs/GaSb superlattices etching mask mid-wavelength infared focal plane arrays

大功率高效率2μm锑化镓基量子阱激光器（英文）被引量：6: 《红外与毫米波学报》2016年第6期672-675,共4页廖永平张宇杨成奥黄书山柴小力王国伟徐应强倪海桥牛智川; Supported by National Basic Research Program of China(2014 CB643903,2013 CB932904);National Natural Science Foundation of China(61435012,61274125,and 61274013);National Special funds for the Development of Major Research Equipment and Instruments,China(2012YQ140005);Strategic Priority Research Program(B)of Chinese Academy of Sciences(XDB01010200); 通过MBE外延系统生长了2μmGaSb基AlGaAsSb/InGaSbI型量子阱激光器,并制备了宽面条形波导激光器件,在20℃工作温度下,器件最大连续激射功率达到1.058W,当注入电流为0.5A时,峰值波长为1.977μm,最大能量转换效率为20.2%,在脉冲频率为1000...; 关键词：大功率激光二极管中红外量子阱

High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits被引量：1: 《Journal of Semiconductors》2016年第11期54-59,共6页尹冬冬何婷婷韩勤吕倩倩张冶金杨晓红; Project supported by the High-Tech Research and Development Program of China(Nos.2015AA016904,2015AA012302);the National Basic Research Program of China(Nos.2012CB933503,2013CB932904);the National Natural Foundation of China(Nos.61274069,61176053,61021003,61435002); This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene （DVS-BCB） adhesive bond...; 关键词：integrated photodetectors BONDING silicon on insulator evanescent wave

Design and fabrication of multi-channel photodetector array monolithic with arrayed waveguide grating被引量：1: 《Chinese Physics B》2016年第3期453-457,共5页吕倩倩潘盼叶焓尹冬冬王玉冰杨晓红韩勤; Project supported by the National High Technology Research and Development Program of China(Grant Nos.2013AA031401,2015AA016902,and 2015AA016904);the National Natural Science Foundation of China(Grant Nos.61176053,61274069,and 61435002);the National Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB932904); We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometr...; 关键词：photodetector array MONOLITHIC evanescent coupling arrayed waveguide grating

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography被引量：8: 《Chinese Physics B》2016年第2期181-185,共5页杨成奥张宇廖永平邢军亮魏思航张立春徐应强倪海桥牛智川; Project supported by the National Key Basic Research Program of China(Grant Nos.2014CB643903 and 2013CB932904);the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005);the National Natural Science Foundation of China(Grant Nos.61435012,61274013,61306088,and 61290303);the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200); We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings...; 关键词：laterally coupled distributed feedback laser LC-DFB interference lithography GASB second-order Bragg grating

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