云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2012CB619304)

国家重点基础研究发展计划(2012CB619304): 作品数：17被引量：9H指数：2; 导出分析报告; 相关作者：修向前张荣谢自力刘斌张李骊更多>>; 相关机构：南京大学南京信息工程大学北京大学南京晓庄学院更多>>; 相关期刊：《Chinese Physics Letters》《Chinese Optics Letters》《光谱学与光谱分析》《物理学报》更多>>; 相关主题：GAN氢化物气相外延INGANSILICENE氮化镓更多>>; 相关领域：电子电信理学一般工业技术化学工程更多>>

Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of In GaN/GaN quantum wells in laser diode structures被引量：1: 《Chinese Optics Letters》2016年第6期55-59,共5页曹文彧胡晓东; supported by the National Natural Science Foundation of China(Nos.61334005,51272008,and51102003);the National Basic Research Program of China(No.2012CB619304); Measurements of the excitation power-dependence and temperature-dependence photoluminescence（PL） are performed to investigate the emission mechanisms of In Ga N/Ga N quantum wells（QWs） in laser diode structures. T...; 关键词：confined Stark piezoelectric excitation thermally partially tempera fitting screening attributed

无电极光助化学腐蚀法制备GaN微/纳米结构及其物性研究: 《中国科学：物理学、力学、天文学》2015年第8期89-102,共14页张士英修向前徐庆君王恒远华雪梅谢自力刘斌陈鹏韩平陆海顾书林张荣郑有炓; 国家重点基础研究发展规划(编号:2011CB301900,2012CB619304);国家高技术研究发展规划(编号:2014AA032605);国家自然科学基金(批准号:60990311,61274003,60936004,61176063,61334009);江苏省自然科学基金(编号:BK2011010,BY2013077,BE2011132,BK20141320);固态照明与节能电子学协同创新中心、教育部新世纪优秀人才支持计划(编号:NCET-11-0229);江苏高校优势学科建设工程资助;扬州市“绿扬金凤计划”;南京大学扬州光电研究院研发基金资助项目; 利用K2S2O8作为氧化剂,通过无电极光助化学腐蚀GaN外延层制备多种形貌的GaN微米/纳米结构.采用扫描电子显微镜(SEM)、阴极射线发光图(CL mapping)、高分辨X射线衍射(HRXRD)、拉曼光谱(Raman spectra)和光致发光谱(PL)等先进的表征手段...; 关键词：GaN微米/纳米结构无电极光助化学腐蚀法阴极射线发光图

Silicene transistors——A review: 《Chinese Physics B》2015年第8期106-115,共10页屈贺如歌王洋洋吕劲; supported by the National Natural Science Foundation of China(Grant Nos.11274016,11474012,and 1207141);the National Basic Research Program of China(Grant Nos.2013CB932604 and 2012CB619304); Free standing silicene is a two-dimensional silicon monolayer with a buckled honeycomb lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory, silicene has been considered as a...; 关键词：SILICENE two-dimensional materials TRANSISTOR electronic device

Silicene spintronics——A concise review: 《Chinese Physics B》2015年第8期56-66,共11页王洋洋屈贺如歌俞大鹏吕劲; supported by the National Natural Science Foundation of China(Grant Nos.11274016 and 11474012);the National Basic Research Program of China(Grant Nos.2013CB932604 and 2012CB619304); Spintronics involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The fascinating spin-resolved properties of graphene motivate numerous researchers to study spintron...; 关键词：SILICENE SPINTRONICS spin-filter spin field effect transistor topological property

Silicene on substrates:A theoretical perspective: 《Chinese Physics B》2015年第8期87-98,共12页钟红霞屈贺如歌王洋洋史俊杰吕劲; supported by the National Natural Science Foundation of China(Grant Nos.11274016 and 11474012);the National Basic Research Program of China(Grant Nos.2013CB932604 and 2012CB619304); Silicene, as the silicon analog of graphene, is successfully fabricated by epitaxially growing it on various substrates.Like free-standing graphene, free-standing silicene possesses a honeycomb structure and Dirac-con...; 关键词：SILICENE dirac cone substrate effects

用氢化物气相外延(HVPE)法生长的氮化铟薄膜的性质研究: 《高技术通讯》2014年第9期971-974,共4页俞慧强修向前张荣华雪梅谢自力刘斌陈鹏韩平施毅郑有炓; 973计划(2011CB301900,2012CB619304,2010CB327504);863计划(2014AA032605);国家自然科学基金(60990311,61274003,60936004,61176063);江苏省自然科学基金(BK2011010)资助项目; 在自制设备上用氢化物气相外延(HVPE)方法在α-Al_2O_3以及GaN/α-Al_2O_3衬底上生长了InN薄膜,并对其性质进行了研究。重点研究了生长温度的变化对所获得的InN薄膜的影响,并利用X射线衍射研究了InN薄膜的结构,用扫描电子显微镜研究了...; 关键词：氮化铟(InN) 薄膜氢化物气相外延(HVPE)

Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition: 《Rare Metals》2014年第6期709-713,共5页Can-Tao Zhong Guo-Yi Zhang; financially supported by the National Basic Research Program of China (Nos. 2012CB619303 and 2012CB619304);the National Natural Science Foundation of China (Nos. 11023003, 10990102, 11174008 and 61076012);the National High Technology Research & Development Project of China (No. 2011AA03A103); The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morp...; 关键词：GAN N-polarity Metal organic chemical vapor deposition

GaN hexagonal pyramids formed by a photo-assisted chemical etching method: 《Chinese Physics B》2014年第5期588-593,共6页张士英修向前华雪梅谢自力刘斌陈鹏韩平陆海张荣郑有炓; Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the National High Technology Research and Development Program of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011010 and BK2009255); A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influe...; 关键词：hexagonal pyramids GAN photo-assisted chemical etching

Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes被引量：2: 《Chinese Physics B》2014年第1期384-389,共6页张敏史俊杰; Project supported by the National Basic Research Program of China(Grant No.2012CB619304);the National Natural Science Foundation of China(Grant Nos.51072007,91021017,11364030,and 11047018);the Beijing Natural Science Foundation,China(Grant No.1112007); The electronic structure and magnetic properties of the transition-metal （TM） atoms （Sc-Zn, Pt and Au） doped zigzag GaN single-walled nanotubes （NTs） are investigated using first-principles spin-polarized densit...; 关键词：transition-metal atom doping electronic structure magnetic property spin-polarized density-functional calculation

氢化物气相外延生长高质量GaN膜生长参数优化研究被引量：1: 《物理学报》2013年第20期428-437,共10页张李骊刘战辉修向前张荣谢自力; 国家重点基础研究发展计划(批准号:2011CB301900,2012CB619304);国家自然科学基金(批准号:60990311,60906025,61176063)、国家自然科学基金青年科学基金(批准号:51002079,21203098);国家高技术研究发展计划(批准号:2011AA03A103)资助的课题~~; 系统研究了低温成核层生长时间、高温生长时的V/III比以及生长温度对氢化物气相外延生长GaN膜晶体质量的影响.研究发现合适的低温成核层为后续高温生长提供成核中心,并能有效降低外延膜与衬底间的界面自由能,促进成核岛的横向生长;优化...; 关键词：氮化镓氢化物气相外延低温成核层

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