We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN...
the funding support from the National Basic Research Program of China(2014CB931800,2013CB933900);the National Natural Science Foundation of China(21407140,21431006,91022032,91227103);J.Zhang is grateful for the China Postdoctoral Science Foundation(2013M531515);the Fundamental Research Funds for the Central Universities(WK2060190036)
Herein, we report a plasmonic metal nanoparti- cle-involved sensor for cyanide ion based on the inner filter effect by using photoluminescent carbon dots as the signal reporter. With commercial bee pollen as the carbo...
Supported by the National Basic Research Program of China under Grant No 2012CB619300, the National Natural Science Foundation of China under Grant Nos 61225019, 11023003 and 61376060, and the National High-Technology Research and Devel- opment Program of China under Grant No 2011AA050514.
We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confir...
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013, 51272008, and 51102003);the National Basic Research Program of China (Grant No. 2012CB619304);the Beijing Municipal Science & Technology Commission (Grant No. D111100001711002);the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014)
We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN...
Supported by the National Natural Science Foundation of China under Grant No 10875004;the National Basic Research Program of China under Grant No 2010CB832904。
Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-μm-thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeli...