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Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes: 《Journal of Semiconductors》2014年第11期81-89,共9页曹琛张冰李炘吴龙胜王俊峰; supported by the National Defense Pre-Research Foundation of China(No.51311050301095); A design of an inverse U-shape buried doping in a pinned photodiode （PPD） of CMOS image sensors is proposed for electrical crosstalk suppression between adjacent pixels. The architecture achieves no extra fill facto...; 关键词：CMOS image sensor electrical crosstalk photoelectric performance design pinned photodiode

A feasibility study on SiC optoinjected CCD with buried channels: 《Journal of Semiconductors》2013年第11期83-87,共5页叶娜陈治明谢龙飞; An SiC optoinjected charge-coupled device with buried channels （BCCD） is designed for the detection of ultraviolet light （UV）, and its feasibility is studied by means of Silvaco numerical simulation software. Char...; 关键词：6H-SIC BCCD ultraviolet light MOBILITY channel

An analytical model of the electric field distributions of buried superjunction devices: 《Journal of Semiconductors》2013年第6期68-71,共4页黄海猛陈星弼; An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green＇s function approach,is derived.An accurate approximation of the exact anal...; 关键词：analytical model superjunction devices electric field distributions breakdown voltage

Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure: 《Journal of Semiconductors》2011年第11期60-64,共5页王永顺冯晶晶刘春娟汪再兴张彩珍常鹏; supported by the Scientific and Technological Supporting Program of Gansu Province,China(No.097GKCA052);the Foundamental Research Funds for the Central Universities(No.lzujbky-2009-14); The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the swi...; 关键词：bipolar static induction transistor dynamical parameters transient processes potential barrier power consumption

A new integrated SOI power device based on self-isolation technology: 《Journal of Semiconductors》2010年第8期98-103,共6页高唤梅罗小蓉张伟邓浩雷天飞; A new SOI LDMOS structure with buried n-islands（BNIs） on the top interface of the buried oxide（BOX） is presented in a p-SOI high voltage integrated circuits（p-SOI HVICs）,which exhibits good self-isolation perfor...; 关键词：buried n-islands self-isolation breakdown voltage electric field SOI

Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS: 《Journal of Semiconductors》2008年第11期2153-2157,共5页李泽宏吴丽娟张波李肇基; A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is proposed. The output characteristics of the RF power LDMOS are greatly affected by the drain-substrate parasitic capacitance. The output characterist...; 关键词：n-buried-pSOI sandwiched parasitic capacitance output characteristics RF power LDMOS

Simulation and Experiment on a Buried-Oxide Trench-Gate Bipolar-Mode JFET: 《Journal of Semiconductors》2008年第10期1860-1863,共4页田波吴郁胡冬青韩峰亢宝位; 北京市教委科技发展计划资助项目(批准号:KM200510005022)~~; A buried-oxide trench-gate bipolar-mode JFET （BTB-JFET） with an oxide layer buried under the gate region to reduce the gate-drain capacitance Cgd is proposed. Simulations with a resistive load circuit for power loss...; 关键词：TB-JFET BTB-JFET buried oxide gate-drain capacitance switching power loss

Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure被引量：1: 《Journal of Semiconductors》2008年第3期461-466,共6页王永顺李海蓉吴蓉李思渊; The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to th...; 关键词：power static induction thyristor reverse snapback electron-hole plasma LIFETIME injection level

A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs: 《Journal of Semiconductors》2005年第12期2309-2314,共6页丁颖王圩阚强王宝军周帆; 国家自然科学基金重大研究计划资助项目(批准号:90101023)~~; A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 1...; 关键词：BROADBAND superluminescent diodes graded composition buried hetero-structure

Fabrication and Simulation of Silicon-on-Insulator Structure with Si_3N_4 as a Buried Insulator: 《Journal of Semiconductors》2005年第9期1722-1726,共5页刘奇斌林青刘卫丽封松林宋志棠; 国家高技术研究发展计划(批准号:2003AA302720,2004AA302G20);上海纳米技术促进中心(批准号:0352nm016)资助项目~~; In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3 N4 film as a buried insulator （SOSN） are successfully formed using epitaxial layer transfer technology for the first ti...; 关键词：Si3 N4 new SOI structures self-heating effects

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