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NMOSFET: 作品数：136被引量：120H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：张鹤鸣胡辉勇郝跃刘卫东宋建军更多>>; 相关机构：西安电子科技大学中国科学院微电子研究所清华大学中国科学院大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家教育部博士点基金国家重点基础研究发展计划陕西省自然科学基金更多>>

A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric: 《Journal of Semiconductors》2016年第2期71-76,共6页刘超文徐静平刘璐卢汉汉黄苑; supported by the National Natural Science Foundation of China(No.61176100); A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The si...; 关键词：GaAs MOSFET threshold voltage stack high-k gate dielectric quantum effect

Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process: 《Journal of Semiconductors》2015年第1期86-89,共4页任尚清杨红唐波徐昊罗维春唐兆云徐烨锋许静王大海李俊峰闫江赵超陈大鹏叶甜春王文武; Project supported by the Important National Science&Technology Specific Projects(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,61306129); Positive bias temperature instability（PBTI） characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage sh...; 关键词：positive bias temperature instability（PBTI） high-k metal gate

Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure: 《Journal of Semiconductors》2015年第1期101-104,共4页赵迪罗谦王向展于奇崔伟谭开洲; Project supported by the Innovative Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices(No.CXJJ201103);the Fund of Analog Integrated Circuit Key Laboratory(No.9140C090301120C09035);the Scientific Research Project of Land and Resources Department of Sichuan Province(No.KJ-2013-12 2200199); A stress modulation technology using a trench-based structure for strained NMOSFET is reported in this paper. With this technology, NMOSFET can be improved by a compressive contact etch stop layer（CESL）, whereas the...; 关键词：CESL trench strained NMOSFET SiN

Hot-carrier effects on irradiated deep submicron NMOSFET: 《Journal of Semiconductors》2014年第7期52-55,共4页崔江维郑齐文余学峰丛忠超周航郭旗文林魏莹任迪远; We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irrad...; 关键词：F ray irradiation deep submicron hot-carrier effect

Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress被引量：2: 《Journal of Semiconductors》2013年第7期91-96,共6页郑齐文余学峰崔江维郭旗丛忠超张兴尧邓伟张孝富吴正新; The hot-carrier effect charactenstic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress.The hot-carrier damage is supposed to be indu...; 关键词：SILICON-ON-INSULATOR hot-carrier effect HUMP back gate

A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate被引量：2: 《Journal of Semiconductors》2012年第9期65-68,共4页崔伟唐昭焕谭开洲张静钟怡胡辉勇徐世六李平胡刚毅; supposed by the National Basic Research Program of China;supposed by the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC;the Science and Technology on Analog Integrated Circuit Laboratory,CETC; A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe l...; 关键词：CMOS inverter strained Si mobility enhancement SiGe virtual substrate relaxed layer

GIDL current degradation in LDD nMOSFET under hot hole stress: 《Journal of Semiconductors》2011年第11期43-46,共4页陈海峰马晓华过立新杜慧敏; supported by the Specialized Research Fund of the Education Department of Shaanxi Province,China(No.11JK0902);the Innovational Fund for Applied Materials of Xi'an,China(No.XA-AM-201012); The degradation of gate-induced drain leakage （GIDL） current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter IDIFF. IDIFF is the difference of GIDL currents measured under two condit...; 关键词：GIDL hot hole LDD band-to-band

Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET: 《Journal of Semiconductors》2011年第6期36-39,共4页刘张李胡志远张正选邵华陈明毕大炜宁冰旭邹世昌; The effects of gamma irradiation on the shallow trench isolation（STI）leakage currents in a 0.18μm technology are investigated.NMOSFETs with different gate lengths are irradiated at several dose levels.The threshold...; 关键词：oxide trapped charge parasitic transistor shallow trench isolation total ionizing dose

Double humps and radiation effects of SOI NMOSFET: 《Journal of Semiconductors》2011年第6期44-46,共3页崔江维余学峰任迪远何承发高博李明卢健; Radiation experiments have been carried out with a SOI NMOSFET.The behavior of double humps was studied under irradiation.The characterization of the hump was demonstrated.The results have shown that the shape of the ...; 关键词：SOI RADIATION double humps

Degradation of ultra-thin gate oxide LDD NMOSFET under GIDL stress: 《Journal of Semiconductors》2009年第4期34-37,共4页胡仕刚郝跃曹艳荣马晓华吴笑峰陈炽周清军; supported by the National Natural Science Foundation of China (Nos. 60736033, 60506020); The degradation of device under GIDL （gate-induced drain leakage current） stress has been studied using LDD NMOSFETs with 1.4 nm gate oxides. Experimental result shows that the degradation of device parameters depen...; 关键词：GIDL interface traps direct tunneling SILC

NMOSFET