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Photoelectric characteristics of CH_3NH_3PbI_3/p-Si heterojunction
《Journal of Semiconductors》2016年第5期19-23,共5页吴亚美 杨瑞霞 田汉民 陈帅 
Project supported by the Hebei Province Natural Science Foundation of China(No.F2014202184);the Tianjin Natural Science Foundation of China(No.15JCZDJC37800)
Organic-inorganic hybrid perovskite CH3NH3PbI3 film is prepared on p-type silicon substrate using the one-step solution method to form a CHaNH3PbI3/p-Si heterojunction. The film morphology and structure are characteri...
关键词：perovskite solar cells HETEROJUNCTION CH3NH3PbI3/p-Si I-V C-V 
Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode
《Journal of Semiconductors》2015年第12期81-86,共6页Kamal Zeghdar Lakhdar Dehimi Achour Saadoune Nouredine Sengouga 
We report the current-voltage （I-V） characteristics of the Schottky diode （Au/n-InP） as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the tem- perat...
关键词：simulation SDB Silvaco INP temperature I-V-T 
Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications
《Journal of Semiconductors》2015年第7期83-89,共7页林体元 庞磊 王鑫华 黄森 刘果果 袁婷婷 刘新宇 
Project supported by the National Natural Science Foundation of China(No.61204086)
An optimized modeling method of 8 ×100μm A1GaN/GaN-based high electron mobility transistor （HEMT） for accurate continuous wave （CW） and pulsed power simulations is proposed. Since the self-heating effect can occ...
关键词：A1GaN/GaN HEMT pulsed I-V trapping effect self-heating effect 
(NH_4)_2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights
《Journal of Semiconductors》2009年第8期56-59,共4页胡爱斌 王文武 徐秋霞 
supported by the State Key Development Program for Basic Research of China(No.2006CB302704)
The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S at...
关键词：Schottky barrier （NH4）2S treatment dangling bonds I-V 
硅基异质结n-SiOxNy/n-Si二极管的I-V特性分析
《Journal of Semiconductors》2007年第z1期369-371,共3页许铭真 谭长华 
n-SiOxNy是硅上热生长的超薄绝缘SiOxNy薄膜在电、热应力作用下形成的一种具有双施主型掺杂的宽带隙(Eg=9eV)n-型半导体材料.随着施加电应力时的环境温度的增加,n-SiOxNy的形成效率显著增加.其形成时间的对数lnt随着应力电压、应力环境...
关键词：硅基n-SiOxNy宽带隙半导体薄膜 硅基异质结二极管 FN隧道导电机制 
基于C-V,I-V,Q-V特性的铁电电容新模型
《Journal of Semiconductors》2005年第5期983-989,共7页陈小明 汤庭鳌 
国家自然科学基金;应用材料AM基金;国防科技预研和PDC基金资助项目~~
推导出描述铁电电容电气特性的新模型.铁电电容可以等效为开关电容(电畴电容)和非开关电容(普通线性电容)的并联,而电畴电容可以看作是由电偶极子组成的铁电材料、上电极和下电极组成.根据实验测试的铁电电容的C V特性,选定电偶极子矫...
关键词：铁电电容 模型 C-V特性 电偶极子 概率密度函数 
Analysis on Characteristic of Static Induction Transistor Using Mirror Method
《Journal of Semiconductors》2005年第2期258-265,共8页胡冬青 李思渊 王永顺 
A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined...
关键词：static induction transistor mirror method I-V   characteristic 
Schottky Barrier Characteristics of Polycrystalline and Epitaxial CoSi_2/n-Si(111) Contacts Formed by Solid State Reaction
《Journal of Semiconductors》2001年第6期689-694,共6页竺士炀 茹国平 屈新萍 李炳宗 
中 -比双边合作和上海市科委资助&&
Polycrystalline and epitaxial CoSi 2 films are formed on the n-Si (111) substrates by solid state reaction of the as-deposited Co single-layer and Co/Ti bilayer with Si,respectively at different annealing phase.The C...
关键词：Schottky barrier SILICIDE I-V/C-V INHOMOGENEITY 
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