supported by the National Natural Science Foundation of China(Grant No.10875084);the Natural Science Foundation of Jiangsu Province(Grant No.BK2008174);the Applied Science Foundation of Suzhou(Grant No.SYJG0915);the National Basic Research Program of China(Grant No.G2009CB929300);supported by Department of Nuclear Science and Engineering,Nanjing University of Aeronautics and Astronautics
GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage (...
supported by the National Basic Research Program of China (Grant No.G2009CB929300)
We propose a way to measure the strength of quantum nonlocal correlation (QNC) based on the characteristic function, which is defined as a response function under the local quantum measurement in a composite system. I...
supported by the National Basic Research Program of China (Grant No.G2009CB929300);the National Natural Science Foundation of China (Grant Nos.60821061 and 60776061)
By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drai...
Project supported by the National Basic Research Program of China(NoG2009CB929300);the Knowledge Innovation Program of the Chinese Academy of Sciences(NoY0BAQ31001);the National Natural Science Foundation of China(No60871077)
We report on the characterization of a room temperature terahertz detector based on a GaN/AlGaN high electron mobility transistor integrated with three patch antennas.Experimental results prove that both horizontal an...