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国家自然科学基金(60025409): 作品数：21被引量：66H指数：5; 导出分析报告; 相关作者：徐现刚胡小波王继扬蒋民华董捷更多>>; 相关机构：山东大学中国科学院更多>>; 相关期刊：《Journal of Rare Earths》《Science China Mathematics》《功能材料》《硅酸盐学报》更多>>; 相关主题：6H-SICSIC单晶SIC大直径微管更多>>; 相关领域：理学电子电信一般工业技术更多>>

Surface Polishing of 6H-SiC Substrates被引量：5: 《Journal of Materials Science & Technology》2007年第3期430-432,共3页Xiufang CHEN Xiangang XU Juan LI Shouzhen JIANG Lina NING Yingmin WANG Deying MA Xiaobo HU Minhua JIANG; supported by the National Natural Science Foundation of China(Grant No.60025409 and No.50472068);supported by the National High-Tech Research and Development Program of China(863 Program,Grant No.2001AA311080).; The surface polishing for silicon carbide （SIC） substrates was investigated and results were presented for mechanical polishing （MP） and chemo-mechanical polishing （CMP）. High quality surfaces were obtained afte...; 关键词：SIC Chemo-mechanical polishing （CMP） ROUGHNESS Subsurface damage

Fine Machining of Large-Diameter 6H-SiC Wafers被引量：6: 《Journal of Materials Science & Technology》2006年第5期681-684,共4页Xiufang CHEN Juan LI Deying MA Xiaobo HU Xiangang XU Minhua JIANG; This work was supported by the National Natural Science Foundation of China （Grant No. 60025409 and 50472068）;It was also supported by National ＂863＂ High Technology Plan （Grant No. 2001AA311080）.; Three main machining processes of large-diameter 6H-SiC wafers were introduced in this paper. These processes include cutting, lapping and polishing. Lapping causes great residual stresses and deep damage layer which ...; 关键词：6H-SIC Chemo-mechanical polishing （CMP） ROUGHNESS

Etching Study of SiC Wafers: 《Journal of Rare Earths》2006年第z1期29-32,共4页Li Juan Wang Yingmin Chen Xiufang Xu Xiangang Hu Xiaobo Jiang Minhua; Project supported by the National Natural Science Foundation of China(60025409 and 50472068);National"863"High Technology Plan(2001AA311080); SiC substrates grown by the sublimation method still have high densities of structural defects such as dislocations,micropipes,low-angle grain boundaries,macrodefects and polytypes.Wet etching was effectively used to ...; 关键词：DEFECTS ETCHING SIC

2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation: 《Journal of Rare Earths》2006年第z1期54-55,共2页Li Xianxiang Hu Xiaobo Jiang Shouzheng Dong Jie Xu Xiangang Jiang Minhua; Project supproted by the National Natural Science Foundation of China(60025409 and 50472068);National"863"High Technology Plan(2001AA311080);Program for New Century Excellent Talents in Shangdong University; Under electron beam irradiation,the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed.The homogenous transition mainly occurs at the thin edge and on th...; 关键词：electron beam irradiation 2H-SiC dendritic nanocrystal amorphous silicon carbide

Low-Angle Grain Boundaries in Sublimation Grown 6H-SiC Crystals被引量：3: 《Journal of Rare Earths》2006年第z1期8-10,共3页Jiang Shouzhen Li Xianxiang Dong Jie Chen Xiufang Xu Xiangang Hu Xiaobo; Project supported National Natural Science Foundation of China(60025409 and 50472068);National"863"High Technology Plan(2001AA311080); High-resolution X-ray diffractometry(HRXRD)was used to assess the quality of 6H-SiC crystals grown by sublimation method.The results show the occurrence of low-angle grain boundaries(LB)is close relative to the inclin...; 关键词：LOW-ANGLE GRAIN boundaries SUBLIMATION 6H-SIC RADIAL temperature gradient

金刚石线锯切割大直径SiC单晶被引量：19: 《功能材料》2005年第10期1575-1577,共3页陈秀芳李娟马德营胡小波徐现刚王继扬蒋民华; 国家高技术研究发展计划(863计划)资助项目(2001AA311080);国家自然科学基金资助项目(60025409); 采用金刚石线切割大直径的SiC单晶,研究了金刚石线锯的切割机理和切割参数,给出切割SiC单晶的实验结果。研究了金刚石线的寿命及各切割参数对线径减少量、翘曲度、表面粗糙度的影响。用光学显微镜观察了磨损的金刚石线和切割表面。; 关键词：金刚石线 SIC 翘曲度

Nd:LuVO_4晶体缺陷的研究被引量：2: 《人工晶体学报》2005年第2期238-241,共4页马丽丽胡小波张怀金王继扬赵守仁田玉莲朱佩平; 国家自然科学基金(No. 60025409)资助项目; 采用提拉法生长的Nd:LuVO4 晶体是一种适合二极管泵浦的新型激光晶体,运用化学腐蚀结合光学显微术和同步辐射白光X射线形貌术对Nd:LuVO4 晶体缺陷进行观察,结果表明:晶体的主要缺陷为位错和小角晶界。利用高分辨X射线衍射仪进一步验证...; 关键词：Nd:LuVO4晶体缺陷分析同步辐射白光X射线形貌术小角晶界激光性质化学腐蚀法

升华法生长大直径的SiC单晶被引量：3: 《中国有色金属学报》2004年第F01期415-418,共4页李娟胡小波王丽李现祥韩荣江董捷姜守振徐现刚王继扬蒋民华; 国家"八六三"计划资助项目(2001AA311080);国家自然科学基金资助项目(60025409); 采用高纯Si粉和C粉在适宜的温度和压力下合成了多晶SiC粉末,在此基础上采用升华法在低压高温下条件下生长了大直径6H SiC单晶,并根据热力学理论分析了SiC的分解。结果表明,在2300℃附近的生长温度下,Si,Si2C,SiC2是Si C热力学平衡下的...; 关键词：升华法 SIC 微管晶体生长热力学

显微激光拉曼光谱法鉴别SiC晶体的多型体结构被引量：4: 《人工晶体学报》2004年第6期877-881,共5页韩荣江王继扬徐现刚胡小波董捷李现祥李娟姜守振王丽蒋民华; 国家 8 6 3计划 (No .2 0 0 1AA31 1 0 80 );国家自然科学基金 (No .6 0 0 2 5 40 9)资助项目; 利用显微激光拉曼光谱法对掺氮 6H SiC单晶中的寄生多型体进行了鉴别 ,结果表明其中有 4H SiC和 15R SiC两种寄生多型体。不同SiC多型体的纵光学声子与等离子体激元的耦合模 (LOPC模 )表明 :在掺氮 6H SiC单晶的生长条件下 ,6H SiC的掺...; 关键词：掺氮 6H-SIC 4H-SiC 耦合模 SIC晶体单晶等离子体型体声子激光拉曼光谱

高分辨X射线衍射法研究碳化硅单晶片中的多型结构被引量：2: 《人工晶体学报》2004年第6期918-921,共4页董捷胡小波徐现刚王继扬韩荣江李现祥; 国家自然科学基金 (No .6 0 0 2 5 40 9);国家 86 3高技术计划 (No .2 0 0 1AA31 1 0 80 )资助; 我们采用高分辨X射线衍射法对SiC单晶片中的多型结构进行了研究 ,研究发现在以 4H SiC为籽晶的晶体生长过程中 ,4H SiC、6H SiC、1 5R SiC出现两相共存或三相共存现象。在单相、两相或三相共存区 ,X射线摇摆曲线具有明显不同的特征。根...; 关键词：晶片 4H-SiC 硅单晶高分辨X射线衍射 SIC单晶 6H-SIC 共存摇摆曲线晶体生长三相

国家自然科学基金(60025409)