国家自然科学基金(61274003)

作品数：7被引量：1H指数：1
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相关作者：刘斌韩平张荣谢自力华雪梅更多>>
相关机构：南京大学南京电子器件研究所枣庄学院南京大学扬州光电研究院更多>>
相关期刊：《半导体光电》《高技术通讯》《Chinese Physics B》《Journal of Semiconductors》更多>>
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Structural characterization of Al_(0.55)Ga_(0.45)N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy
《Chinese Physics B》2017年第4期468-471,共4页徐庆君 刘斌 张士英 陶涛 谢自力 修向前 陈敦军 陈鹏 韩平 张荣 郑有炓 
Project supported by the National Key Research and Development Project of China(Grant No.2016YFB0400100);the Hi-tech Research Project of China(Grant Nos.2014AA032605 and 2015AA033305);the National Natural Science Foundation of China(Grant Nos.61274003,61422401,51461135002,and61334009);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BY2013077,BK20141320,and BE2015111);the Project of Green Young and Golden Phenix of Yangzhou City,the Postdoctoral Sustentation Fund of Jiangsu Province,China(Grant No.1501143B);the Project of Shandong Provinceial Higher Educational Science and Technology Program,China(Grant No.J13LN08);the Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center,Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD);Research Funds from NJU–Yangzhou Institute of Opto-electronics
Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using ...
关键词：ALXGA1-XN high-temperature AlN interlayer high resolution x-ay diffraction transmission elec-tron microscopy 
High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier
《Chinese Physics B》2017年第1期488-492,共5页Feng Xu Peng Chen Fu-Long Jiang Ya-Yun Liu Zi-Li Xie Xiang-Qian Xiu Xue-Mei Hua Yi Shi Rong Zhang You-Liao Zheng 
supported by the National Natural Science Foundation of China(Grant Nos.61274003,61422401,51461135002,and 61334009);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BY2013077,BK20141320,BE2015111,and BK20161324);the Program for New Century Excellent Talents in University,China(Grant No.NCET-11-0229);the Special Semiconductor Materials and Devices Research Funds from State Grid Shandong Electric Power Company,China
A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells（MQWs） is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short per...
关键词：AlInGaN superlattices MQWs photoluminescence x-ray diffraction spectrum 
碳化硅薄膜的力学性能理论研究被引量：1
《半导体光电》2016年第6期805-808,841,共5页何国堂 刘斌 戴姜平 谢自力 韩平 张荣 王守旭 黄旼 朱健 
国家重点研发计划项目(2016YFB0400100);国家“863”计划项目(2014AA032605,2015AA033305);国家自然科学基金项目(61605071,61674076,61274003,61422401,51461135002,61334009);江苏省自然科学基金项目(BY2013077,BK20141320,BE2015111);固态照明与节能电子学协同创新中心项目;江苏省重点学科资助计划项目;南京大学扬州光电研究院研发基金项目
目前,SiC薄膜在极端苛刻环境下的力学性质尚不明确,相关力学参数仍需进一步研究。文章采用模拟软件ANSYS对微尺寸的SiC薄膜在不同条件下的力学性能进行了理论分析。研究了SiC薄膜的面积和厚度对刚度的影响,结果表明,其刚度与薄膜面积成...
关键词：SIC薄膜 ANSYS数值模拟 刚度 缺陷 温度 
无电极光助化学腐蚀法制备GaN微/纳米结构及其物性研究
《中国科学：物理学、力学、天文学》2015年第8期89-102,共14页张士英 修向前 徐庆君 王恒远 华雪梅 谢自力 刘斌 陈鹏 韩平 陆海 顾书林 张荣 郑有炓 
国家重点基础研究发展规划(编号:2011CB301900,2012CB619304);国家高技术研究发展规划(编号:2014AA032605);国家自然科学基金(批准号:60990311,61274003,60936004,61176063,61334009);江苏省自然科学基金(编号:BK2011010,BY2013077,BE2011132,BK20141320);固态照明与节能电子学协同创新中心、教育部新世纪优秀人才支持计划(编号:NCET-11-0229);江苏高校优势学科建设工程资助;扬州市“绿扬金凤计划”;南京大学扬州光电研究院研发基金资助项目
利用K2S2O8作为氧化剂,通过无电极光助化学腐蚀GaN外延层制备多种形貌的GaN微米/纳米结构.采用扫描电子显微镜(SEM)、阴极射线发光图(CL mapping)、高分辨X射线衍射(HRXRD)、拉曼光谱(Raman spectra)和光致发光谱(PL)等先进的表征手段...
关键词：GaN微米/纳米结构 无电极光助化学腐蚀法 阴极射线发光图 
Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask
《Chinese Physics B》2014年第9期327-330,共4页陶涛 智婷 李民雪 谢自力 张荣 刘斌 李毅 庄喆 张国刚 蒋府龙 陈鹏 郑有炓 
supported by the Special Funds for Major State Basic Research Project of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the Hi-tech Research Project of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,61274003,60936004,and 61176063);the Program for New Century Excellent Talents in University of China(Grant No.NCET-11-0229);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK2011010);the Funds of Key Laboratory of China(Grant No.9140C140102120C14);the Research Funds from NJU-Yangzhou Institute of Opto-electronics of China
A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching （ICP） surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of pho...
关键词：PHOTOELECTROLYSIS InGaN photoelectrode surface roughening hydrogen generation 
用氢化物气相外延(HVPE)法生长的氮化铟薄膜的性质研究
《高技术通讯》2014年第9期971-974,共4页俞慧强 修向前 张荣 华雪梅 谢自力 刘斌 陈鹏 韩平 施毅 郑有炓 
973计划(2011CB301900,2012CB619304,2010CB327504);863计划(2014AA032605);国家自然科学基金(60990311,61274003,60936004,61176063);江苏省自然科学基金(BK2011010)资助项目
在自制设备上用氢化物气相外延(HVPE)方法在α-Al_2O_3以及GaN/α-Al_2O_3衬底上生长了InN薄膜,并对其性质进行了研究。重点研究了生长温度的变化对所获得的InN薄膜的影响,并利用X射线衍射研究了InN薄膜的结构,用扫描电子显微镜研究了...
关键词：氮化铟(InN) 薄膜 氢化物气相外延(HVPE) 
GaN nanopillars with a nickel nano-island mask
《Journal of Semiconductors》2013年第12期21-25,共5页林增钦 修向前 张世英 华雪梅 谢自力 张荣 陈鹏 韩平 郑有炓 
Project supported by the Special Funds for Major State Basic Research Project(Nos.2011CB301900,2012CB619304,2010CB327504);the Hi-Tech Research Project(No.2011AA03A103);the National Natural Science Foundation of China(Nos.60990311,61274003,60936004,61176063);the Natural Science Foundation of Jiangsu Province(No.BK2011010)
Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and...
关键词：GaN nanopillars nickel nano-island thermal ammonia etching MASK ICP SEM 
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