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国家自然科学基金(60906038): 作品数：16被引量：13H指数：2; 导出分析报告; 相关作者：韩山明林丽娟喻钊张波蒋苓利更多>>; 相关机构：电子科技大学哈尔滨工程大学南京航空航天大学更多>>; 相关期刊：《Journal of Semiconductors》《微电子学》《光学学报》《Chinese Physics B》更多>>; 相关主题：LDMOSESDSILICON-ON-INSULATORN-SFLOATING更多>>; 相关领域：电子电信理学电气工程更多>>

Analysis of OFF-state and ON-state performance in a silicon-on-insulator power MOSFET with a low-k dielectric trench被引量：1: 《Journal of Semiconductors》2013年第7期79-85,共7页汪志刚张波李肇基; Project supported by the National Natural Science Foundation of China(Nos.60906037,60906038);the Fundamental Research Funds for the Central Universities,China(Nos.ZYGX2009J027,E022050205);the Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices; A novel silicon-on-insulator（SOI） MOSFET with a variable low-k dielectric trench（LDT MOSFET） is proposed and its performance and characteristics are investigated.The trench in the drift region between drain and so...; 关键词：power MOSFET low-k dielectric trench RELIABILITY enhanced dielectric field

A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer: 《Journal of Semiconductors》2013年第7期97-101,共5页吴丽娟章文通张波李肇基; Project supported by the National Natural Science Foundation of China(No.60906038);the National Defense Pre-Research Foundation of China(No.9140A08010308DZ02);the Science-Technology Foundation for Young Scientists of the University of Electronic Science and Technology of China(No.L08010301JX0830);the Department of Education of Sichuan in 2013(No.13ZA0089); A novel silicon-on-insulator（SOI） high-voltage pLDMOS is presented with a partial interface equipotential floating buried layer（FBL） and its analytical model is analyzed in this paper.The surface heavily doped p-t...; 关键词：FBL SOI ENDIF pLDMOS Ron sp

内置调制层型光纤表面等离子体波共振传感器研究被引量：2: 《光学学报》2013年第1期244-250,共7页孙晓明曾捷张倩昀穆昊周雅斌; 国家自然科学基金(60906038);国家自然科学基金(51161120326);江苏省科技支撑计划(BE2011181)资助课题; 研究了一种基于内置调制层结构的光纤表面等离子体波共振(SPR)传感器。通过在金膜与纤芯的内侧增覆具有不同厚度和属性的光学透明薄膜作为内调制层,构成了性能独特的光电复合薄膜,起到调节倏逝波矢量和金膜表面等离子体振荡波矢量的双...; 关键词：光纤光学表面等离子体波共振内置调制层折射率灵敏度

Novel high-voltage power lateral MOSFET with adaptive buried electrodes: 《Chinese Physics B》2012年第7期444-449,共6页章文通吴丽娟乔明罗小蓉张波李肇基; Project supported by the National Natural Science Foundation of China (Grant No. 60906038);the Science Technology Foundation for Young Scientist of University of Electronic Science and Technology of China (Grant No. L08010301JX0830); A new high-voltage and low-specific on-resistance （Ron,sp） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET...; 关键词：adaptive buried electrode interface charge breakdown voltage enhanced dielectric layer field

A 700 V BCD technology platform for high voltage applications被引量：1: 《Journal of Semiconductors》2012年第4期47-50,共4页乔明蒋苓利张波李肇基; Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(No.60906038); A 700 V BCD technology platform is presented for high voltage applications. An important feature is that all the devices have been realized by using a fully implanted technology in a p-type single crystal without an e...; 关键词：BCD technology fully implanted technology double RESURF LDMOS

OB LDMOS器件的性能研究: 《功能材料与器件学报》2012年第2期178-182,共5页唐盼盼王颖; 国家自然科学基金(No.60906038);中央高校基本科研业务费专项资金资助(No.GK2080260104); 研究了一种具有OB(Oxide By-passed)结构的SOI LDMOS器件,分析了该器件的耐压机理以及结构特点,并通过SILVACO TCAD软件对该结构进行三维数值仿真。通过仿真验证可知,该结构通过类超结(SJ)电场调制技术获得了与超结器件类似的性能,该结...; 关键词：SOI结构 OB结构导通电阻电荷补偿

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor: 《Chinese Physics B》2012年第3期405-410,共6页庄翔乔明张波李肇基; Project supported by the National Natural Science Foundation of China (Grant No. 60906038); This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage （BV） for an ultra-high-voltage （UHV） high-side thin layer silicon-on-insulator （SOI） p-channel low-...; 关键词：silicon on insulator breakdown voltage back-gate voltage p-channel low-density metaloxide-semiconductor

ESD应力下LDMOS器件软失效的分析及优化被引量：1: 《微电子学》2012年第1期134-137,共4页韩山明林丽娟喻钊蒋苓利张波; 国家自然科学基金资助项目(60906038); 分析了发生软失效的两种原因:电场诱导和热诱导。针对一种采用0.35μm BCD工艺的LDMOS器件,讨论了改变器件漂移区长度对软泄漏电流的影响。最终通过对漂移区长度以及源端和衬底接触间距的优化,消除了器件原先存在的软泄漏电流现象,并且...; 关键词：ESD 软泄漏电流软失效 LDMOS

基于不同阻挡层材料的铜互连热应力有限元分析: 《功能材料与器件学报》2012年第1期51-56,共6页嵇凤丽王颖高松松刘云涛; 国家自然科学基金(No.60906038);黑龙江省自然科学基金(No.QC2009C66); 本文利用ANSYS有限元软件分别对用TaN和ZrN作为扩散阻挡层的Cu/barrier/SiO2/Si结构中铜线的热应力分布进行仿真。研究热载荷350℃到20℃不同阻挡层材料单大马士革和双大马士革两种结构铜互连线的热应力。通过仿真结果得到:单大马士革...; 关键词：铜互连扩散阻挡层 ZRN ANSYS 热应力

Impact of parasitic resistance on the ESD robustness of high-voltage devices被引量：2: 《Journal of Semiconductors》2012年第1期59-63,共5页Lin Lijuan Jiang Lingli Fan Hang Zhang Bo; Project supported by the National natural Science Foundation of China(No.60906038); The impacts ofsubstrate parasitic resistance and drain ballast resistance on electrostatic discharge （ESD） robustness of LDMOS are analyzed. By increasing the two parasitic resistances, the ESD robustness of LDMOS a...; 关键词：electrostatic discharge high-voltage device LDMOS parasitic resistance

国家自然科学基金(60906038)