云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(61176063)

国家自然科学基金(61176063): 作品数：13被引量：5H指数：1; 导出分析报告; 相关作者：张荣谢自力刘斌修向前郑有炓更多>>; 相关机构：南京大学南京信息工程大学南京晓庄学院枣庄学院更多>>; 相关期刊：《Chinese Physics Letters》《Science China(Physics,Mechanics & Astronomy)》《高技术通讯》《Chinese Physics B》更多>>; 相关主题：GAN氮化镓氢化物气相外延MASKINN更多>>; 相关领域：电子电信理学更多>>

无电极光助化学腐蚀法制备GaN微/纳米结构及其物性研究: 《中国科学：物理学、力学、天文学》2015年第8期89-102,共14页张士英修向前徐庆君王恒远华雪梅谢自力刘斌陈鹏韩平陆海顾书林张荣郑有炓; 国家重点基础研究发展规划(编号:2011CB301900,2012CB619304);国家高技术研究发展规划(编号:2014AA032605);国家自然科学基金(批准号:60990311,61274003,60936004,61176063,61334009);江苏省自然科学基金(编号:BK2011010,BY2013077,BE2011132,BK20141320);固态照明与节能电子学协同创新中心、教育部新世纪优秀人才支持计划(编号:NCET-11-0229);江苏高校优势学科建设工程资助;扬州市“绿扬金凤计划”;南京大学扬州光电研究院研发基金资助项目; 利用K2S2O8作为氧化剂,通过无电极光助化学腐蚀GaN外延层制备多种形貌的GaN微米/纳米结构.采用扫描电子显微镜(SEM)、阴极射线发光图(CL mapping)、高分辨X射线衍射(HRXRD)、拉曼光谱(Raman spectra)和光致发光谱(PL)等先进的表征手段...; 关键词：GaN微米/纳米结构无电极光助化学腐蚀法阴极射线发光图

Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask: 《Chinese Physics B》2014年第9期327-330,共4页陶涛智婷李民雪谢自力张荣刘斌李毅庄喆张国刚蒋府龙陈鹏郑有炓; supported by the Special Funds for Major State Basic Research Project of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the Hi-tech Research Project of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,61274003,60936004,and 61176063);the Program for New Century Excellent Talents in University of China(Grant No.NCET-11-0229);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK2011010);the Funds of Key Laboratory of China(Grant No.9140C140102120C14);the Research Funds from NJU-Yangzhou Institute of Opto-electronics of China; A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching （ICP） surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of pho...; 关键词：PHOTOELECTROLYSIS InGaN photoelectrode surface roughening hydrogen generation

用氢化物气相外延(HVPE)法生长的氮化铟薄膜的性质研究: 《高技术通讯》2014年第9期971-974,共4页俞慧强修向前张荣华雪梅谢自力刘斌陈鹏韩平施毅郑有炓; 973计划(2011CB301900,2012CB619304,2010CB327504);863计划(2014AA032605);国家自然科学基金(60990311,61274003,60936004,61176063);江苏省自然科学基金(BK2011010)资助项目; 在自制设备上用氢化物气相外延(HVPE)方法在α-Al_2O_3以及GaN/α-Al_2O_3衬底上生长了InN薄膜,并对其性质进行了研究。重点研究了生长温度的变化对所获得的InN薄膜的影响,并利用X射线衍射研究了InN薄膜的结构,用扫描电子显微镜研究了...; 关键词：氮化铟(InN) 薄膜氢化物气相外延(HVPE)

GaN hexagonal pyramids formed by a photo-assisted chemical etching method: 《Chinese Physics B》2014年第5期588-593,共6页张士英修向前华雪梅谢自力刘斌陈鹏韩平陆海张荣郑有炓; Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the National High Technology Research and Development Program of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011010 and BK2009255); A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influe...; 关键词：hexagonal pyramids GAN photo-assisted chemical etching

GaN nanopillars with a nickel nano-island mask: 《Journal of Semiconductors》2013年第12期21-25,共5页林增钦修向前张世英华雪梅谢自力张荣陈鹏韩平郑有炓; Project supported by the Special Funds for Major State Basic Research Project(Nos.2011CB301900,2012CB619304,2010CB327504);the Hi-Tech Research Project(No.2011AA03A103);the National Natural Science Foundation of China(Nos.60990311,61274003,60936004,61176063);the Natural Science Foundation of Jiangsu Province(No.BK2011010); Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and...; 关键词：GaN nanopillars nickel nano-island thermal ammonia etching MASK ICP SEM

氢化物气相外延生长高质量GaN膜生长参数优化研究被引量：1: 《物理学报》2013年第20期428-437,共10页张李骊刘战辉修向前张荣谢自力; 国家重点基础研究发展计划(批准号:2011CB301900,2012CB619304);国家自然科学基金(批准号:60990311,60906025,61176063)、国家自然科学基金青年科学基金(批准号:51002079,21203098);国家高技术研究发展计划(批准号:2011AA03A103)资助的课题~~; 系统研究了低温成核层生长时间、高温生长时的V/III比以及生长温度对氢化物气相外延生长GaN膜晶体质量的影响.研究发现合适的低温成核层为后续高温生长提供成核中心,并能有效降低外延膜与衬底间的界面自由能,促进成核岛的横向生长;优化...; 关键词：氮化镓氢化物气相外延低温成核层

Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer被引量：2: 《Science China(Physics,Mechanics & Astronomy)》2013年第9期1694-1698,共5页CHAI XuZhao ZHANG Yun LIU Bin XIE ZiLi HAN Ping YE JianDong HU LiQun XIU XiangQian ZHANG Rong ZHENG YouDou; supported by the Special Funds for Major State Basic Research Project (Grant Nos.2011CB301900,2012CB619304,and 2012CB619200);the Hi-tech Research Project (Grant No.2011AA03A103);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2011010,BK2010385,BK2009255,and BK2010178);the Program Granted for Scientific Innovation Research of College Graduate in Jiangsu Province (Grant No.CXLX12_0049);the Research Funds from NJU-Yangzhou Institute of Opto-electronics;a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions; Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is ...; 关键词：yellow luminescence blue luminescence V/Ⅲ ratio

氢化物气相外延生长的GaN膜中的应力分析被引量：1: 《光谱学与光谱分析》2013年第8期2105-2108,共4页刘战辉修向前张李骊张荣张雅男苏静谢自力刘斌单云; 国家重点基础研究发展规划项目(2011CB301900,2012CB619304);国家高技术研究发展规划项目(2011AA03A103);国家自然科学基金项目(60990311,60906025,61176063,51002079,21203098);江苏省自然科学基金项目(BK2011010)资助; 对在c面蓝宝石上用氢化物气相外延法(HVPE)生长的六方相纤锌矿结构的GaN膜中的应力进行了分析。高分辨X射线衍射(002)面和(102)面摇摆曲线扫描(半高宽数值分别为317和358角秒)表明生长的GaN膜具有较好的晶体质量。利用高分辨X射线衍射...; 关键词：氮化镓氢化物气相外延拉曼光谱激光光致发光谱应力

In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition: 《Chinese Physics Letters》2012年第10期217-220,共4页DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou; Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.; The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman...; 关键词：SCATTERING VAPOUR ANISOTROPIC

Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template: 《Chinese Physics Letters》2012年第9期219-221,共3页YU Zhi-Guo CHEN Peng YANG Guo-Feng LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei HAN Ping SHI YiZHANG Rong ZHENG You-Dou; Supported by the National Basic Research Program of China(2011CB301900);the National Natural Science Foundation of China(61176063,60990311,60820106003,60906025,60936004);The Nature Science Foundation of Jiangsu Province(BK2008019,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Optoelectronics.; Roughened surfaces of light-emitting diodes(LEDs)provide substantial improvement in light extraction efficiency.By preparing the self-assemble nanoporous Ni template through rapid annealing of a thin Ni film,followed ...; 关键词：ROUGH PREPARING TEMPLATE

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