云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(61176069)

国家自然科学基金(61176069): 作品数：14被引量：13H指数：2; 导出分析报告; 相关作者：蔡金勇李肇基尹超周坤范叶更多>>; 相关机构：电子科技大学更多>>; 相关期刊：《Chinese Physics B》《物理学报》《Journal of Semiconductors》更多>>; 相关主题：LATERALSOI_LDMOSSOION-RESISTANCETRENCH更多>>; 相关领域：电子电信理学一般工业技术电气工程更多>>

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer被引量：1: 《Chinese Physics B》2014年第3期625-629,共5页伍伟张波罗小蓉方健李肇基; Project supported by the National Science and Technology Project of the Ministry of Science and Technology of China(Grant No.2010ZX02201);the National Natural Science Foundation of China(Grant No.61176069);the National Defense Pre-Research of China(Grant No.51308020304); A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift...; 关键词：multiple-direction assisted depletion effect breakdown voltage （BV） electric field modulation lateral double-diffusion MOSFET （LDMOS）

An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement被引量：1: 《Journal of Semiconductors》2014年第3期79-84,共6页范叶罗小蓉周坤范远航蒋永恒王琦王沛罗尹春张波; Project supported by the National Natural Science Foundation of China(No.61176069);the Program for New Century Excellent Talentsin University of Ministry of Education of China(No.NCET-11-0062);the China Postdoctoral Science Foundation(No.2012T50771); A low specific on-resistance（R on;sp/ SOI NBL TLDMOS（silicon-on-insulator trench LDMOS with an N buried layer） is proposed. It has three features： a thin N buried layer（NBL） on the interface of the SOI layer/bur...; 关键词：MOSFET silicon-on-insulator breakdown voltage specific on-resistance

Experimental and theoretical study of an improved breakdown voltage SOI LDMOS with a reduced cell pitch被引量：2: 《Journal of Semiconductors》2014年第2期57-61,共5页罗小蓉王骁玮胡刚毅范远航周坤罗尹春范叶张正元梅勇张波; Projects supported by the National Natural Science Foundation of China(No.61176069);the Special Financial Gnants from the China Postdoctoral Science Foundation and Chongqing(Nos.2012T50771,XM2012004); An improved breakdown voltage （BV） SOI power MOSFET with a reduced cell pitch is proposed and fabricated. Its breakdown characteristics are investigated numerically and experimentally. The MOSFET features dual trenc...; 关键词：MOSFET SOI breakdown voltage trench gate

A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer被引量：1: 《Journal of Semiconductors》2014年第1期65-69,共5页伍伟张波方健罗小蓉李肇基; supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2010ZX02201);the National Natural Science Foundation of China(No.61176069);the National Defense Pre-Research of China(No.51308020304); A novel buffer super-junction （S J） lateral double-diffused MOSFET （LDMOS） with an N-type buried layer （NB） is proposed. An N- buffer layer is implemented under the SJ region and an N-type layer is buried in the...; 关键词：N-type buried layer breakdown voltage electric field modulation lateral double-diffusion MOSFET super-junction

高k介质电导增强SOI LDMOS机理与优化设计被引量：4: 《物理学报》2013年第23期313-319,共7页王骁玮罗小蓉尹超范远航周坤范叶蔡金勇罗尹春张波李肇基; 国家自然科学基金(批准号:61176069);中国博士后科学基金(批准号:2012T50771);教育部新世纪优秀人才支持计划(批准号:NCET-11-0062)资助的课题~~; 本文提出一种高k介质电导增强SOI LDMOS新结构(HK CE SOI LDMOS),并研究其机理.HK CE SOI LDMOS的特征是在漂移区两侧引入高k介质,反向阻断时,高k介质对漂移区进行自适应辅助耗尽,实现漂移区三维RESURF效应并调制电场,因而提高器件耐压...; 关键词：高k介质绝缘体上硅 (SOI) 击穿电压比导通电阻

High-voltage SOI lateral MOSFET with a dual vertical field plate: 《Chinese Physics B》2013年第11期645-650,共6页范杰张波罗小蓉李肇基; Project supported by the National Natural Science Foundation of China(Grant No.61176069);the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-11-0062);Project of 51308020304; A new silicon-on-insulator （SOI） power lateral MOSFET with a dual vertical field plate （VFP） in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, whic...; 关键词：breakdown voltage specific on-resistance vertical field plate oxide trench

Analytical model for high-voltage SOI device with composite-k dielectric buried layer: 《Journal of Semiconductors》2013年第9期67-72,共6页范杰张波罗小蓉汪志刚李肇基; supported by the National Natural Science Foundation of China(Nos.60976060,61176069);the National Key Laboratory of Analogue Integrated Circuit,China(No.9140C090304110C0905); An analytical model for a novel high voltage silicon-on-insulator device with composite-k （relative per mittivity） dielectric buried layer （CK SOl） is proposed. In this structure, the composite-k buried layer is c...; 关键词：composite-k dielectric accumulated holes potential well electric field SOI

A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS: 《Chinese Physics B》2013年第6期542-548,共7页周坤罗小蓉范远航罗尹春胡夏融张波; supported by the National Natural Science Foundation of China (Grant No. 61176069);the State Key Laboratory Science Fund of Electronic Thin Films and Integrated Devices of China (Grant No. CXJJ201004);the National Key Laboratory Science Fund of Analog Integrated Circuit,China (Grant No. 9140C090304110C0905); A novel low specific on-resistance （Ron,sp） silicon-on-insulator （SO1） p-channel lateral double-diffused metal-oxide semiconductor （pLDMOS） compatible with high voltage （HV） n-channel LDMOS （nLDMOS） is propo...; 关键词：SILICON-ON-INSULATOR p-channel LDMOS p-buried layer breakdown voltage

High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar被引量：3: 《Chinese Physics B》2013年第6期633-636,共4页伍伟张波方健罗小蓉李肇基; supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201);the National Natural Science Foundation of China (Grant No. 61176069);the National Defense Pre-Research of China (Grant No. 51308020304); A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge...; 关键词：super-junction lateral double-diffused metal-oxide semiconductor partial lightly doped pillar electric field modulation breakdown voltage

Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance被引量：1: 《Chinese Physics B》2013年第4期531-536,共6页范杰汪志刚张波罗小蓉; Project supported by the National Natural Science Foundation of China (Grant No. 61176069);the National Key Laboratory of Analog Integrated Circuit,China (Grant No. 9140C090304110C0905);the Innovation Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices,China (Grant No. CXJJ201004); A new high voltage trench lateral double-diffused metal–oxide semiconductor （LDMOS） with ultra-low specific onresistance （R on,sp ） is proposed. The structure features a dual gate （DG LDMOS）： a planar gate and...; 关键词：breakdown voltage specific on-resistance dual gate oxide trench

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