supported by National Natural Science Foundation of China(Grant Nos.11305126,11235008);Foundation of State Key Laboratory of China(Grant No.SKLIPR1211)
Recently,complementary metal-oxide semiconductor image sensors(CISs)have become a key element of the imaging instrument and have been widely used in many scientific applications[1,2]such as space remote sensing,medi...
supported by the Project of National Natural Science Foundation of China(Grant Nos.61376099,11235008,61434007);the Specialized Research Fund for the Doctoral Program of High Education(Grant No.20130203130002)
This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold ...
Project supported by the National Natural Science Foundation of China(Grant Nos.61376099,11235008,and 61205003)
The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal-oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface...