CASCODE

作品数：51被引量：61H指数：4
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相关机构：西安电子科技大学东南大学电子科技大学中国航天北京微电子技术研究所更多>>
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A 58-dBΩ20-Gb/s inverter-based cascode transimpedance amplifier for optical communications被引量：3
《Journal of Semiconductors》2022年第1期53-58,共6页Quan Pan Xiongshi Luo 
supported in part by the National NaturalScience Foundation of China under Grant 62074074;in part by Natural Science Foundation of Guangdong Province under Grant 2021A1515011266;in part by the Science and Technology Plan of Shenzhen under Grants JCYJ20190809142017428 and JCYJ20200109141225025。
This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process.Multiple bandwidth enhancement techniques,including input bonding wire,input series on-chip i...
关键词：bandwidth enhancement CMOS optical receiver CASCODE inductive peaking negative capacitance transimpedance amplifier(TIA) 
Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability
《Journal of Semiconductors》2017年第7期49-55,共7页Weiyi Li Zhili Zhang Kai Fu Guohao Yu Xiaodong Zhang Shichuang Sun Liang Song Ronghui Hao Yaming Fan Yong Cai Baoshun Zhang 
supported by the Key Technologies Support Program of Jiangsu Province(No.BE2013002-2);the National Key Scientific Instrument and Equipment Development Projects of China(No.2013YQ470767)
We proposed a novel Al Ga N/Ga N enhancement-mode（E-mode） high electron mobility transistor（HEMT） with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atla...
关键词：GaN HEMT enhancement-mode electric field distribution V_（th） instability 
A W-band two-stage cascode amplifier with gain of 25.7 dB
《Journal of Semiconductors》2013年第12期72-76,共5页钟英辉 张玉明 张义门 曹玉雄 姚鸿飞 王显泰 吕红亮 刘新宇 金智 
Project supported by the National Basic Research Program of China(Nos.2010CB327502,2010CB327505);the Advance Research Project(No.5130803XXXX)
AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been real...
关键词：CASCODE coplanar waveguide HEMT GATE-LENGTH 
Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer被引量：1
《Journal of Semiconductors》2013年第9期35-40,共6页Hassan Kaatuzian Hadi Dehghan Nayeri Masoud Ataei Ashkan Zandi 
We analyze an integrated electrically pumped opto-electronic mixer, which consists of two InP/GalnAs hetero junction bipolar transistors （HBT）, in a cascode configuration. A new HBT with modified physical structure ...
关键词：CASCODE down conversion gain MIXER opto-electronic photo HBT simulation 
A low glitch 12-bit current-steering CMOS DAC for CNC systems
《Journal of Semiconductors》2013年第2期98-102,共5页雷鑑铭 桂涵姝 胡北稳 
Project supported by the Hubei Natural Science Foundation of China(No.2010CDB02706)
A 12-bit, 100-MHz CMOS current-steering D/A converter for CNC （computer number control） systems is presented. To reduce the glitch and increase the SFDR （spurious-free dynamic range）, a low crosspoint switch drive...
关键词：CNC systems current-steering DAC low glitch CASCODE crosspoint switch driver SFDR 
Design of a 0.5 V CMOS cascode low noise amplifier for multi-gigahertz applications
《Journal of Semiconductors》2012年第1期114-119,共6页Liu Baohong Zhou Jianjun Mao Junfa 
Project Supported by the National Science Fund for Creative Research Groups of China(No.60821062);the National Basic Research Program of China(No.2009CB320202)
This paper presents the design of 0.5 V multi-gigahertz cascode CMOS LNA for low power wireless communication. By splitting the direct current through conventional cascode topology, the constraint of stacking- MOS str...
关键词：CMOS 0.5 V cascode low noise amplifier direct current split forward-body-bias technology multi- gigahertz applications 
A 12-Channel,30Gb/s,0.18μm CMOS Front-End Amplifier for Parallel Optic-Fiber Receivers
《Journal of Semiconductors》2006年第1期47-53,共7页李智群 薛兆丰 王志功 冯军 
国家高技术研究发展计划资助项目(批准号:2003AA312040)~~
This paper presents a 12-channel,30Gb/s front-end amplifier realized in standard 0.18μm CMOS technology for parallel optlc-fiber receivers. In order to overcome the problem of inadequate bandwidth caused by the large...
关键词：parallel optic-fiber receiver front-end amplifier regulated-cascode substrate noise coupling ISOLATION 
Cascode Connected AlGaN/GaN Microwave HEMTs on Sapphire Substrates
《Journal of Semiconductors》2004年第12期1567-1572,共6页邵刚 刘新宇 和致经 刘健 吴德馨 
国家重点基础研究发展计划 (批准号 :2 0 0 2 CB3 1190 3 );中国科学院重点创新 (批准号 :KGCX2 -SW-10 7)资助项目~~
Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm c...
关键词：CASCADE broadband ALGAN/GAN HEMTS SAPPHIRE 
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