云南高校图书馆联盟文献共享服务平台- ON-RESISTANCE

ON-RESISTANCE: 作品数：22被引量：16H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：张兴何进高越更多>>; 相关机构：北京大学南昌大学辽宁大学更多>>; 相关期刊：《Protection and Control of Modern Power Systems》《Communications in Theoretical Physics》《Chinese Journal of Polymer Science》《Chinese Physics B》更多>>; 相关基金：国家自然科学基金中国博士后科学基金国家重点基础研究发展计划更多>>

A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance被引量：3: 《Journal of Semiconductors》2021年第6期55-63,共9页Jongwoon Yoon Kwangsoo Kim; supported by the MSIT(Ministry of Science and ICT),Korea,under the ITRC(Information Technology Research Center)support program(IITP-2020-2018-0-01421)supervised by the IITP(Institute for Information&communications Technology Promotion);then Samsung Electronics.; A split gate MOSFET(SG-MOSFET)is widely known for reducing the reverse transfer capacitance(C_(RSS)).In a 3.3 kV class,the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field.In add...; 关键词：4H-SIC split gate ON-RESISTANCE reverse transfer capacitance switching energy loss switching time

Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm^2被引量：1: 《Journal of Semiconductors》2020年第6期85-88,共4页Qiang Liu Qian Wang Hao Liu Chenxi Fei Shiyan Li Runhua Huang Song Bai; supported by the National Science and Technology Major Project(No.2017YFB0102302)。; A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm^2 and breakdown voltage exceeding 1.5 kV is designed and fabricated.Numerical simulations are carried out to optimize the electric field strength in gat...; 关键词：4H-SIC electric field strength floating guard ring specific on-resistance

Thin silicon layer SOI power device with linearly-distance fixed charge islands: 《Journal of Semiconductors》2015年第5期41-45,共5页左园李海鸥翟江辉唐宁宋树祥李琦; Project supported by the Guangxi Natural Science Foundation of China(No.2013GXNSFAA019335);the Guangxi Department of Education Project(No.201202ZD041);the China Postdoctoral Science Foundation Project(Nos.2012M521127,2013T60566);the National Natural Science Foundation of China(Nos.61361011,61274077,61464003); A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed （LFI LDMOS）. A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide laye...; 关键词：linearly-distanced fixed charge island breakdown voltage dynamic holes ON-RESISTANCE

Electric field optimized LDMOST using multiple decrescent and reverse charge regions: 《Journal of Semiconductors》2014年第7期65-68,共4页成建兵夏晓娟蹇彤郭宇峰于舒娟杨浩; supported by the National Natural Science Foundation of China(No.61274080);the Natural Science Foundation of Jiangsu Province(No.BK2011753);the Postdoctoral Science Foundation of China(No.2013M541585); A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field dist...; 关键词：LDMOST multiple decrescent and reverse charge regions electric field breakdown voltage ON-RESISTANCE

An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement被引量：1: 《Journal of Semiconductors》2014年第3期79-84,共6页范叶罗小蓉周坤范远航蒋永恒王琦王沛罗尹春张波; Project supported by the National Natural Science Foundation of China(No.61176069);the Program for New Century Excellent Talentsin University of Ministry of Education of China(No.NCET-11-0062);the China Postdoctoral Science Foundation(No.2012T50771); A low specific on-resistance（R on;sp/ SOI NBL TLDMOS（silicon-on-insulator trench LDMOS with an N buried layer） is proposed. It has three features： a thin N buried layer（NBL） on the interface of the SOI layer/bur...; 关键词：MOSFET silicon-on-insulator breakdown voltage specific on-resistance

A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer: 《Journal of Semiconductors》2013年第3期31-34,共4页赵秋明李琦唐宁李勇昌; supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054);the Guangxi Key Science and Technology Program ofChina(No.11107001-20); A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the b...; 关键词：trenched buried oxide layer breakdown voltage ON-RESISTANCE compensation layer

A low on-resistance SOI LDMOS using a trench gate and a recessed drain被引量：2: 《Journal of Semiconductors》2012年第7期43-46,共4页葛锐罗小蓉蒋永恒周坤王沛王琦王元刚张波李肇基; supported by the National Natural Science Foundation of China(Nos.60976060,61176069);the National Key Laboratory of AnalogIntegrated Circuit(NLAIC),China(No.9140C090304110C0905);the State Key Laboratory of Electronic Thin Films and Integrated Devices,China(No.CXJJ201004); An integrable silicon-on-insulator （SOl） power lateral MOSFET with a trench gate and a recessed drain （TGRD MOSFET） is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide （...; 关键词：trench gate recessed drain ON-RESISTANCE breakdown voltage

Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure: 《Journal of Semiconductors》2012年第5期48-52,共5页李琦王卫东赵秋明韦雪明; Project supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054);the Guangxi Key Science and Technology Program of China(No.11107001-20); A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology（SB） is reported.The P-type epitaxial layer is embedded between an N-type drift region and an N-typ...; 关键词：substrate bias breakdown voltage diode on-resistance

Design of 700 V triple RESURF nLDMOS with low on-resistance被引量：1: 《Journal of Semiconductors》2011年第11期47-50,共4页银杉乔明张永满张波; supported by the National Natural Science Foundation of China(No.60906038);the Pre-Research Foundation,China(No. 9140A08010309DZ02);the Science-Technology Foundation for Young Scientist of University of Electronic Science and Technology of China(No.L08010301JX0830); A 700 V triple RESURF nLDMOS with a low specific on-resistance of 100 mΩ.cm^2 is designed. Compared with a conventional double RESURF nLDMOS whose P-type layer is located on the surface of the drift region, the P-typ...; 关键词：NLDMOS triple RESURF breakdown voltage specific on-resistance charge sharing

A novel structure in reducing the on-resistance of a VDMOS被引量：1: 《Journal of Semiconductors》2011年第2期44-47,共4页杨永晖唐昭焕张正元刘勇王志宽谭开洲冯志成; A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of the VDMOS is reduced by 22% of that of the traditional VDMOS structure as the breakdown volt...; 关键词：VDMOS on-resistance specific on-resistance breakdown voltage epitaxial layer resistance

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