PMOSFET

作品数：101被引量：107H指数：4
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Recovery of PMOSFET NBTI under different conditions被引量：1
《Chinese Physics B》2015年第9期484-488,共5页曹艳荣 杨毅 曹成 何文龙 郑雪峰 马晓华 郝跃 
Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61404097,61334002,61106106,and 61176130);the Fundamental Research Funds for the Central Universities,China(Grant No.JB140415)
Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery o...
关键词：negative bias temperature instability（NBTI） P-type metal–oxide–semiconductor field effect transistor RECOVERY 
Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
《Chinese Physics B》2014年第11期496-501,共6页曹艳荣 何文龙 曹成 杨毅 郑雪峰 马晓华 郝跃 
supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61176130);the Fundamental Research Fund for the Central Universities of China(Grant No.JB140415)
The influence of PMOSFET gate length on the parameter degradation relations under negative bias temperature insta- bility （NBTI） stress is studied. The threshold voltage degradation increases with reducing the gate ...
关键词：negative bias temperature instability （NBTI） gate length DEGRADATION 
Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer
《Chinese Physics Letters》2013年第11期195-198,共4页SU Shao-Jian HAN Gen-Quan ZHANG Dong-Liang ZHANG Guang-Ze XUE Chun-Lai WANG Qi-Ming CHENG Bu-Wen 
Supported by the National Basic Research Program of China under Grant Nos 2013CB632103 and 2011CBA00608;the National Natural Science Foundation of China under Grant Nos 61036003,61177038 and 61176013;the Science Research Foundation of Huaqiao University under Grant 12BS221.
Germanium-tin(Ge_(1-x)Sn_(x))p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)were fabricated using a strained Ge_(0.985)Sn_(0.015) thin film that was epitaxially grown on a silicon-on-insulator subs...
关键词：technique DRAIN relaxed 
Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET
《Chinese Physics B》2013年第4期434-437,共4页雷晓艺 刘红侠 张凯 张月 郑雪峰 马晓华 郝跃 
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606);the National Natural Science Foundation of China (Grant No. 61106106);the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006)
The hot carrier effect （HCE） of an ultra-deep sub-micron p-channel metal–oxide semiconductor field-effect transistor （pMOSFET） is investigated in this paper. Experiments indicate that the generation of positively...
关键词：PMOSFETS hot carrier effect （HCE） DEGRADATION lifetime modeling 
表面Ge沟道pMOSFET阈值电压模型
《西安电子科技大学学报》2012年第4期94-97,113,共5页戴显英 李志 张鹤鸣 郝跃 王琳 查冬 王晓晨 付毅初 
国家重点基础研究发展计划(973)资助项目(6139801-1)
基于MOS器件的短沟道效应和漏致势垒降低效应理论,通过求解泊松方程,建立了表面Ge沟道pMOSFET的阈值电压模型.基于该模型对表面Ge沟道MOSFET器件的沟道长度、栅氧化层厚度、衬底掺杂浓度、SiGe虚拟衬底中的Ge含量等结构参数以及漏源电...
关键词：阈值电压模型 Ge沟道pMOSFET 漏致势垒降低效应 短沟道效应 
A 150%enhancement of PMOSFET mobility using hybrid orientation被引量：1
《Journal of Semiconductors》2012年第6期20-23,共4页唐昭焕 谭开洲 崔伟 张静 钟怡 徐世六 郝跃 张鹤鸣 胡辉勇 张正璠 胡刚毅 
supported by the National Basic Research Program of China(No.61398)
A high-performance PMOSFET based on silicon material of hybrid orientation is obtained.Hybrid orientation wafers,integrated by（100） and（110） crystal orientation,are fabricated using silicon-silicon bonding, chemic...
关键词：hybrid orientation non-selective expitaxy carrier mobility （110） crystal orientation PMOSFET chemical mechanical polishing 
Degradation of pMOSFETs with Ultrathin Oxide andDifferent HALO Dose
《Journal of Semiconductors》2004年第9期1097-1103,共7页赵要 胡靖 许铭真 谭长华 
国家重点基础研究发展计划资助项目 (批准号 :G2 0 0 0 -0 3 65 0 3 )~~
The effect of HALO dose on device parameter degradation of pMOSFET with 2.1nm o xide and 0.135μm channel length at hot carrier stress is analyzed.It is found that the degradation mechanism is not sensitive to HALO d...
关键词：hot carrier PMOSFET HALO DEGRADATION 
Characteristics of Ultra-Thin Oxide pMOSFET Device After Soft Breakdown
《Journal of Semiconductors》2003年第11期1149-1153,共5页张贺秋 许铭真 谭长华 
国家重点基础研究(No.G2 0 0 0 -0 3 65 0 3 );教育部博士点基金(No.970 0 0 113 )资助项目~~
The degradation of MOS transistor operation due to soft breakdown of the gate oxide is studied.Important transistor parameters are monitored under homogeneous stress at different temperature until the soft breakdown o...
关键词：FN tunneling MOSFET soft breakdown ultra  thin 
Characterization of Oxide Charge During Hot-Carrier Degradation of Ultrathin Gate pMOSFETs--Investigated by Charge Pumping Technique被引量：2
《Journal of Semiconductors》2003年第3期238-244,共7页杨国勇 王金延 霍宗亮 毛凌锋 谭长华 许铭真 
国家重点基础研究发展规划资助项目 (No.2 0 0 0 0 36 5 0 3)~~
The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is ...
关键词：MOS structure oxid trap hot-carrier degradation 
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