A-PLANE

作品数：19被引量：7H指数：1
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相关领域：电子电信理学更多>>
相关机构：东南大学更多>>
相关期刊：《Chinese Physics Letters》《Chinese Optics Letters》《Science China(Technological Sciences)》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>
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Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range被引量：6
《Chinese Physics Letters》2022年第4期83-87,共5页Jianguo Zhao Kai Chen Maogao Gong Wenxiao Hu Bin Liu Tao Tao Yu Yan Zili Xie Yuanyuan Li Jianhua Chang Xiaoxuan Wang Qiannan Cui Chunxiang Xu Rong Zhang Youdou Zheng 
supported by the National Natural Science Foundation of China(Grant Nos.62074077,61921005,61974062,and 61904082);the China Postdoctoral Science Foundation(Grant No.2020M671441);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant Nos.19KJB510006 and 19KJB510039);the Natural Science Foundation of Jiangsu Province(Grant No.BK20190765)。
Nonpolar(1120)plane In_(x)Ga_(1-x)N epilayers comprising the entire In content(x)range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties...
关键词：POLAR LIFETIME separation 
Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer
《Chinese Physics Letters》2020年第3期69-72,共4页Shen Yan Xiao-Tao Hu Jun-Hui Die Cai-Wei Wang Wei Hu Wen-Liang Wang Zi-Guang Ma Zhen Deng Chun-Hua Du Lu Wang Hai-Qiang Jia Wen-Xin Wang Yang Jiang Guoqiang Li Hong Chen 
Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。
We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N...
关键词：INSERTION POLAR ROUGHNESS 
Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy
《Chinese Physics Letters》2015年第8期173-176,共4页姜腾 许晟瑞 张进成 林志宇 蒋仁渊 郝跃 
Supported by the National Natural Science Foundation of China under Grant No 61204006;the Fundamental Research Funds for the Central Universities under Grant No 7214570101;the National Key Science and Technology Special Project under Grant No 2008ZX01002-002
Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of...
关键词：MOVPE GAN Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy 
Growth of a-Plane InN Film and Its THz Emission
《Chinese Physics Letters》2014年第7期160-163,共4页王光兵 赵国忠 郑显通 王平 陈广 荣新 王新强 
Supported by the National Basic Research Program of China under Grant No 2012CB619300, the National Natural Science Foundation of China under Grant Nos 61225019, 11023003 and 61376060, and the National High-Technology Research and Devel- opment Program of China under Grant No 2011AA050514.
We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confir...
Strain Distributions in Non-Polar a-Plane In_(x)Ga_(1−x)N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction
《Chinese Physics Letters》2013年第9期169-172,共4页ZHAO Gui-Juan YANG Shao-Yan LIU Gui-Peng LIU Chang-Bo SANG Ling GU Cheng-Yan LIU Xiang-Lin WEI Hong-Yuan ZHU Qin-Sheng WANG Zhan-Guo 
Supported by the National Natural Science Foundation of China under Grant Nos 91233111,61274041,11275228,61006004 and 61076001;the National Basic Research Program of China(No 2012CB619305);the National High-Technology R&D Program of China(No 2011AA03A101).
By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalor...
关键词：technique deposition. PLANE 
Growth and Characterization of an a-Plane In_(x)Ga_(1−x)N on a r-Plane Sapphire
《Chinese Physics Letters》2012年第11期178-182,共5页ZHAO Gui-Juan LI Zhi-Wei WEI Hong-Yuan LIU Gui-Peng LIU Xiang-Lin YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-Guo 
Supported by the National Natural Science Foundation of China under Grant Nos 60976008,61006004,61076001,10979507;the Special Funds for Major State Basic Research Project(973 program)of China(No A000091109-05);the National High-Technology R&D Program of China(No 2011AA03A101).
The non-polar a-plane(1120)In_(x)Ga_(1−x)N alloys with different indium compositions(0.074≤x≤0.555)were grown on r-plane(1012)sapphire substrates by metalorganic chemical vapor deposition,and the indium compositions...
关键词：ALLOYS PLANE 
In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition
《Chinese Physics Letters》2012年第10期217-220,共4页DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou 
Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman...
关键词：SCATTERING VAPOUR ANISOTROPIC 
Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and Semipolar (1122) GaN
《Chinese Physics Letters》2012年第1期254-256,共3页XU Sheng-Rui LIN Zhi-Yu XUE Xiao-Yong LIU Zi-Yang MA Jun-Cai JIANG Teng MAO Wei WANG Dang-Hui ZHANG Jin-Cheng HAO Yue 
Supported by the Fundamental Research Funds for the Central Universities under Grant No K50511250002;the National Key Science&Technology Special Project under Grant No 2008ZX01002-002;the Major Program and State Key Program of the National Natural Science Foundation of China under Grant Nos 60890191 and 60736033.
Nonpolar (1120) and semipolar (1122) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs).Transmission electron microscopy reveals that the de...
关键词：GAN SAPPHIRE MOCVD 
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