ULTRA-THIN

作品数：193被引量：323H指数：8
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Perovskite/silicon-based heterojunction tandem solar cells with 14.8%conversion efficiency via adopting ultrathin Au contact被引量：1
《Journal of Semiconductors》2017年第1期60-65,共6页Lin Fan Fengyou Wang Junhui Liang Xin Yao Jia Fang Dekun Zhang Changchun Wei Ying Zhao Xiaodan Zhang 
Project supported by the International Cooperation Projects of the Ministry of Science and Technology(No.2014DFE60170);the National Natural Science Foundation of China(Nos.61474065,61674084);the Tianjin Research Key Program of Application Foundation and Advanced Technology(No.15JCZDJC31300);the Key Project in the Science&Technology Pillar Program of Jiangsu Province(No.BE2014147-3);the 111 Project(No.B16027)
A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open...
关键词：lanar perovskite top cell silicon heterojunction bottom cell four-terminal tandem transparent ultra-thin gold electrode 
Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks
《Journal of Semiconductors》2016年第5期48-51,共4页徐昊 杨红 王艳蓉 王文武 万光星 任尚清 罗维春 祁路伟 赵超 陈大鹏 刘新宇 叶甜春 
Project supported by the National High Technology Research and Development Program(863 Program)of China(No.SS2015AA010601);the National Natural Science Foundation of China(Nos.61176091;61306129);the Opening Project of the Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences
The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series ...
关键词：high-k/metal gate stacks ultra-thin EOT TZDB series resistance effect 
Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
《Journal of Semiconductors》2015年第9期66-70,共5页方雯 Eddy Simoen Li Chikang Marc Aoulaiche 罗军 赵超 Cor Claeys 
This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN w...
关键词：random telegraph noise low frequency noise ultra-thin BOX SILICON-ON-INSULATOR single charge trap 
TDDB characteristic and breakdown mechanism of ultra-thin SiO_2/HfO_2 bilayer gate dielectrics被引量：1
《Journal of Semiconductors》2014年第6期32-37,共6页陶芬芬 杨红 唐波 唐兆云 徐烨锋 许静 王卿璞 闫江 
Project supported by the Important National Science & Technology Specific Projects(No.2009ZX02035);the National Natural Science of China(No.61306129);the National Found for Fostering Talents of Basic Science(No.J0730318)
The characteristics of TDDB （time-dependent dielectric breakdown） and SILC （stress-induced leakage current） for an ultra-thin SiO2/HfO2 gate dielectric stack are studied. The EOT （equivalent-oxide-thickness） of ...
关键词：HFO2 TDDB SILC bulk trap interface trap 
An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects被引量：2
《Journal of Semiconductors》2008年第5期869-874,共6页栾苏珍 刘红侠 贾仁需 蔡乃琼 王瑾 匡潜玮 
国家自然科学基金(批准号:60206006);国防预研究基金(批准号:51308040103)资助项目~~
A compact drain current including the variation of barrier heights and carrier quantization in ultrathin-body and double-gate Schottky barrier MOSFETs （UTBDG SBFETs） is developed. In this model, Schrodinger＇s equat...
关键词：Schottky barrier quantum effects the effective mass electron density 
Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT
《Journal of Semiconductors》2005年第8期1495-1499,共5页齐海涛 张世林 郭维廉 梁惠来 毛陆虹 
国家重点基础研究发展计划资助项目(批准号:2002CB311905)~~
A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is ...
关键词：HBT ultra-thin base device simulation voltage-controlled NDR PVCR 
Ultra-Thin Body SOI MOSFET交流特性分析和结构优化
《Journal of Semiconductors》2005年第1期120-125,共6页田豫 黄如 
国家自然科学基金 (批准号 :90 2 0 70 0 4);国家重点基础研究发展规划 (批准号 :2 0 0 0 0 3 65 0 1)资助项目~~
针对沟道长度为 5 0nm的UTBSOI器件进行了交流模拟工作 ,利用器件主要的性能参数 ,详细分析了UTB结构的交流特性 .通过分析UTBSOI器件的硅膜厚度、侧墙宽度等结构参数对器件交流特性的影响 ,对器件结构进行了优化 .最终针对UTBSOIMOSFE...
关键词：UTB MOSFET 交流特性 模拟 
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