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POWER_AMPLIFIER: 作品数：137被引量：118H指数：4; 导出分析报告; 相关作者：刘新宇周健义姚小江李诚瞻陈延湖更多>>; 相关机构：中国科学院微电子研究所清华大学东南大学电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划中国博士后科学基金更多>>

A 500-600 MHz GaN power amplifier with RC-LC stability network被引量：1: 《Journal of Semiconductors》2017年第8期69-74,共6页Ying Lu Liang Shen Jiabo Wang Ya Shen; supported by the National Key Basic Research Program of China(No.2014CB339901); The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band pow...; 关键词：thin film integrated passive device （TF-IPD） parameters extraction DE-EMBEDDING lumped element

45-GHz and 60-GHz 90 nm CMOS power amplifiers with a fully symmetrical 8-way transformer power combiner: 《Science China(Information Sciences)》2017年第8期32-43,共12页Zhengdong JIANG Kaizhe GUO Peng HUANG Yiming FAN Chenxi ZHAO Yongling BAN Jun LIU Kai KANG; supported by National Natural Science Foundation of China (Grant Nos. 61331006, 61422104);National Science and Technology Major Project of the Ministry of Science and Technology of China (Grand No. 2016ZX03001015-004);National High Technology Research and Development Program of China (863) (Grand No. 2015AA01A704); In this paper, 45 GHz and 60 GHz power amplifiers（PAs） with high output power have been successfully designed by using 90 nm CMOS process. The 45 GHz（60 GHz） PA consists of two（four） differential stages. The siz...; 关键词：millimeter wave power amplifier CMOS transformer power combiner 45 GHz 60 GHz

Power allocation for massive MIMO:impact of power amplifier efficiency: 《Science China(Information Sciences)》2016年第2期18-26,共9页Yingchu GUO Junlin TANG Gang WU Shaoqian LI; supported by National Basic Research Program of China(973)(Grant No.2012CB316003); With the rapid development of information technology, massive MIMO is becoming attractive for the fifth generation（5G） communication because of its outstanding performance in both spectral efficiency（SE）and energy...; 关键词：5G massive MIMO energy efficiency green communication power amplifier efficiency

Design and implementation of a high-efficiency concurrent dual-band power amplifier: 《The Journal of China Universities of Posts and Telecommunications》2014年第6期94-99,共6页YANG Qian-kun LIU Yuan-an YU Cui-ping LI Shu-lan LI Jiu-chao; supported by the National Natural Science Foundation of China (61201025);the National Natural Science Foundation of China for the Major Equipment Development (61327806);the National Basic Research Program of China (2014CB339900); This paper studies the behaviors of power amplifier（PA） driven by a single-carrier continuous wave（CW） signal and a two-carrier CW signal both in theory and simulation, and explains why the traditional dual-band P...; 关键词：PA concurrent dual-band intermodulation and harmonic high efficiency

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain被引量：2: 《Journal of Semiconductors》2013年第7期147-153,共7页姚鸿飞曹玉雄吴旦昱宁晓曦苏永波金智; Project supported by the National Basic Research Program of China(No.2010CB327502); A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power ...; 关键词：power amplifier W-BAND DHBT INP

Implementation of a 6 GHz band TDD RF transceiver for the next generation mobile communication system被引量：4: 《Journal of Southeast University(English Edition)》2012年第3期276-281,共6页于志强周健义赵丽周飞李江; The National Natural Science Foundation of China (No.60702027,60921063);the National Basic Research Program of China(973 Program)(No.2010CB327400);the National Science and Technology Major Project of Ministry of Science and Technology of China(No.2010ZX03007-001-01,2011ZX03004-001); The development of a high performance wideband radio frequency （RF） transceiver used in the next generation mobile communication system is presented. The developed RF transceiver operates in the 6 to 6.3 GHz band an...; 关键词：radio frequency （RF） transceiver orthogonal frequency division multiplexing （OFDM） IMT-advanced system phase noise low noise amplifier power amplifier LTE-advanced system

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier: 《Journal of Semiconductors》2011年第8期70-73,共4页戈勤陈晓娟罗卫军袁婷婷庞磊刘新宇; Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191); A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-1...; 关键词：KU-BAND AlGaN/GaN HEMTs power amplifier MONOLITHIC power density

AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band被引量：1: 《Journal of Semiconductors》2007年第4期514-517,共4页姚小江李宾陈延湖陈小娟魏珂李诚瞻罗卫军王晓亮刘丹刘果果刘新宇; 国家重点基础研究发展计划(批准号:2002CB311903);中国科学院重点创新工程(批准号:KGCX2-SW-107)资助项目~~; A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and com...; 关键词：AlGaN/GaN HEMTs power combining MIC power amplifiers

Design and Fabrication of Power Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications: 《Journal of Semiconductors》2006年第1期9-13,共5页薛春来成步文姚飞王启明; 国家高技术研究发展计划(批准号:2002AA312010);国家重点基础研究发展规划(批准号:G2000036603);国家自然科学基金(批准号:60336010)资助项目~~; A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltag...; 关键词：SiGe HBT POWER RF WIRELESS

ISM Band Medium Power Amplifier被引量：1: 《Journal of Semiconductors》2004年第6期626-632,共7页白大夫刘训春袁志鹏钱永学; 国家重点基础研究发展规划资助项目 (编号 :G2 0 0 0 0 683 0 40 3 )~~; With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compres...; 关键词：heterojunction bipolar transistor power amplifier bias network gain compression quiescent bias current

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