云南高校图书馆联盟文献共享服务平台- ALXGA1-XN/GAN

ALXGA1-XN/GAN: 作品数：10被引量：5H指数：1; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：沈波许福军刘治国毕朝霞施毅更多>>; 相关机构：北京大学中国科学院南京大学西安电子科技大学更多>>; 相关期刊：《Communications in Theoretical Physics》《Chinese Physics Letters》《发光学报》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划内蒙古自治区自然科学基金更多>>

AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer: 《Chinese Physics Letters》2015年第7期156-159,共4页李祥东张进成邹瑜马学智刘畅张苇杭温慧娟郝跃; Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002;National Natural Science Foundation of China under Grant Nos 11435010 and 61474086; We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the ...; 关键词：AlGaN Channel High Electron Mobility Transistors with an Al_xGa x)N/GaN Composite Buffer Layer

Dependence of Spin-orbit Parameters in AlxGa1-xN/GaN Quantum Wells on the Al Composition of the Barrier被引量：1: 《Communications in Theoretical Physics》2013年第7期119-123,共5页Li Ming; In this paper, we obtain considerable spin-orbit （SO） parameters in AlxGa1-xN/GaN quantum wells （QWs） with sheet carrier concentration N8 = 120 × 10^11/cm^2. With increasing AI content （x） of the barrier, the S...; 关键词：spin-orbit coupling effect Rashba spin splitting intersubband spin-orbit coupling 2DEG

Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite AlxGa1-xN/GaN/AlyGa1-yN Quantum Well被引量：2: 《Communications in Theoretical Physics》2007年第2期349-354,共6页ZHANG Li SHI Jun-Jie; The project supported by National Natural Science Foundation of China under Grant Nos. 60276004 and 6939007,3, the Scientilic Research Foundation for the Returned 0overseas Chinese Scholars State Education Ministry of China; Based on the dielectric continuum model and Loudon＇s uniaxial crystal model, the properties of the quasi. confined （QC） optical phonon dispersions and the electron-QC phonons coupling functions in an asymmetric wur...; 关键词：quasi-confined optical phonon asymmetric wurtzite QW nitride-based semiconductor

Influence of Polarization-Induced Electric Field on Subband Structure in AlxGa1-xN/GaN Double Quantum Wells被引量：1: 《Chinese Physics Letters》2006年第6期1574-1577,共4页雷双英沈波张国义; Supported by the National Natural Science Foundation of China under Grant Nos 60325413 and 60444007, the Cultivation Fund of the Key Scientific and Technical Innovation Project of the Ministry of Education of China under Grant No 705002,and the Beijing Natural Science Foundation of China under Grant No 4062017.; The influence of the polarization-induced electric field and other parameters on the subband structure in AlxGa1-x N /GaN coupled double quantum wells （DQWs） has been studied by solving the Schrodinger and Poisson e...; 关键词：偏振感应电场次带结构 AlxGa1-xN/GaN双量子阱量子论

Anticrossing Gap between Pairs of the Subbands in AlxGa1-xN/GaN Double Quantum Wells: 《Chinese Physics Letters》2006年第2期450-452,共3页雷双英沈波张国义; Supported by the National Natural Science Foundation of China under Grant Nos 60325413, 60136020, and 60444007, and the Research Fund for the Doctoral Programme of Higher Education of Chin under Grant No 20020284023.; Dependences of anticrossing gaps between pairs of subbands in Alx Ga1-xN/GaN double quantum wells （DQWs） on the width and the Al composition of the central barrier of the DQWs and on the well width of the DQWs have ...; 关键词：ALLOYS

Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped AlxGa1-xN／GaN Heterostructure: 《Chinese Physics Letters》2005年第8期2096-2099,共4页韩修训吴洁君李杰民丛光伟刘祥林朱勤生王占国

Magnetointersubband Oscillations of the Two-Dimensional Electron Gas in AlxGa1-xN／GaN Heterostructures: 《Chinese Physics Letters》2004年第5期915-918,共4页蒋春萍杨富华郑厚植仇志军桂永胜郭少令褚君浩沈波郑有炓

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN／GaN Heterostructures: 《Chinese Physics Letters》2004年第1期170-172,共3页刘杰沈波王茂俊周玉刚陈敦军张荣施毅郑有炓

Pb(Zr0.53Ti0.47)O3/AlxGa1-xN/GaN异质结构的电容-电压特征（英文）被引量：1: 《发光学报》2001年第S1期57-60,共4页沈波李卫平周玉刚毕朝霞张荣郑泽伟刘杰周慧梅施毅刘治国郑有炓 Someya T Arakawa Y; 国家自然科学基金资助项目 ( 6 980 6 0 0 6 ,6 9976 0 14和 6 99870 0 1) ;国家重点基础研究项目专项支持 (G2 0 0 0 0 6 83) ;国家高技术研究和发展项目;日本科学促进协会前沿研究项目 (JSPS RFTF96P0 0 2 0 1)~~; 通过在调制掺杂Al0 2 2 Ga0 78N/GaN异质结构上淀积Pb(Zr0 53 Ti0 4 7)O3 (PZT)铁电薄膜 ,我们发展了一种基于AlxGa1-xN/GaN异质结构的金属铁电半导体 (MFS)结构。在高频电容电压 (C V)特性测量中 ,发现Al0 2 2 Ga0 78N/GaN...; 关键词：C-V特性 Pb(ZrTi)O3 铁电薄膜 ALXGA1-XN/GAN

Pb(Zr_(0.53)Ti_(0.47))O_3/Al_xGa_(1-x)N/GaN异质结构的电容-电压特征(英文): 《发光学报》2001年第z1期57-60,共4页沈波李卫平周玉刚毕朝霞张荣郑泽伟刘杰周慧梅施毅刘治国郑有炓 Someya T Arakawa Y; 国家自然科学基金资助项目 ( 6 980 6 0 0 6 ,6 9976 0 14和 6 99870 0 1) ;国家重点基础研究项目专项支持 (G2 0 0 0 0 6 83) ;国家高技术研究和发展项目;日本科学促进协会前沿研究项目 (JSPS RFTF96P0 0 2 0 1)~~; 通过在调制掺杂Al0 2 2 Ga0 78N/GaN异质结构上淀积Pb(Zr0 53 Ti0 4 7)O3 (PZT)铁电薄膜 ,我们发展了一种基于AlxGa1-xN/GaN异质结构的金属铁电半导体 (MFS)结构。在高频电容电压 (C V)特性测量中 ,发现Al0 2 2 Ga0 78N/GaN...; 关键词：C-V特性 Pb(ZrTi)O3 铁电薄膜 ALXGA1-XN/GAN

ALXGA1-XN/GAN